Tecport E-beam Evaporator Process parameters. METALS: 1.Aluminium. 2.Chromium. 3.Gold. 4.Titanium. 5.Hafnium. 6.Nickel. OXIDES: 1. Aluminium Oxide. 2.

Slides:

Advertisements

Similar presentations

Sputtering Eyal Ginsburg WW49/00.

Advertisements

Sputtering Eyal Ginsburg WW46/02.

Titanium Ti-6Al-4V RCMT1204M0 H13A C6-SRDCN HP 1 v c 164 ft/min Coolant pressure 102 psi Feed f n (inch/rev) Cutting depth a p (inch)

HABEEB HATTAB HABEEB Office: BN-Block, Level-3, Room Ext. No.: 7292 H/P No.:

Testbourne Limited Company Presentation. Company Overview Family own business established by Ted and Jill Mihill in 1977 Family own business established.

Deal-Grove Model Predictions Once B and B/A are determined, we can predict the thickness of the oxide versus time Once B and B/A are determined, we can.

High-temperatures in-situ XRD studies of CrN and TiN films Experimental: XRD at high T Experimental: XRD at high T XRD patterns, lattice parameter evolution.

Techniques of Synthesizing Wafer-scale Graphene Zhaofu ZHANG

Cell and module construction. Photovoltaic effect and basic solar cell parameters To obtain a potential difference that may be used as a source of electrical.

ENEE-698E 2 nd presentation by: Saeed Esmaili Sardari November 06, 2007.

Fiona Beck Small Particles, Big Hopes: Absorption Enhancement in Silicon using Metallic Nanoparticles.

SOIMUMPs Process Flow Keith Miller Foundry Process Engineer.

ECE/ChE 4752: Microelectronics Processing Laboratory

7.8 By: Charles and Dan Period H. A single replacement reaction is when atoms of one element replace the atoms of another compound. (Please now take out.

Thin Film Deposition Prof. Dr. Ir. Djoko Hartanto MSc

Hydrogen H Zinc Zn Chlorine Cl Copper Cu Helium He.

Alkali Metals Nobel Gases Halides Non Metals

Thin films technology for RICH detectors Functionality Production technologies Performance Presented at the CBM-RICH workshop March 2006 André Braem,

McGill Nanotools Microfabrication Processes

Surface MEMS 2014 Part 1

The Effects of Process Parameters during the Deposition of SiNx using PECVD Presented by John Nice and Joyce Palmer Georgia Institute of Technology NNIN.

The Sixth International Workshop on Junction Technology (IWJT), May 15-16, 2006, Shanghai, China. Formation and characterization of aluminum-oxide by stack-

Models The first major model is that of Deal and Grove (1965) The first major model is that of Deal and Grove (1965) This lead to the linear/parabolic.

Hydrogen. H Helium He Lithium Li Beryllium Be.

Adam Kueltzo Thornton Fractional North High School July 30 th, 2009 University of Illinois at Chicago Advanced Materials Research Laboratory (AMReL) Mentors:

Optical Constants of Uranium Nitride Thin Films in the EUV (7-15 nm) Marie K. Urry EUV Thin Film Group Brigham Young University.

RICH 2004 Mexico, November 2004 André Braem, Claude David and Christian Joram CERN PH / TA1 - SD V. Results Metal multi-dielectric mirror coatings for.

Furnaces and Wet bench area Savitha P. Wet bench Currently has two wet benches – one exclusively for CMOS processes Two hours slots TMAH and KOH etching.

Self Forming Barrier Layers from CuX Thin Films Shamon Walker, Erick Nefcy, Samir Mehio Dr. Milo Koretsky, Eric Gunderson, Kurt Langworthy Sponsors: Intel,

Tecport E beam Evaporator Evaporated thin films Process parameters.

High Temperature Oxidation of TiAlN Thin Films for Memory Devices

Conductive epitaxial ZnO layers by ALD Conductive epitaxial ZnO layers by ALD Zs. Baji, Z. Lábadi, Zs. E. Horváth, I. Bársony Research Centre for Natural.

The Periodic Table (revision)

Do you know the Elements??? Identify the element name. Make sure you spell the name correctly!!

Atomic Layer Deposition for Microchannel Plates Jeffrey Elam Argonne National Laboratory September 24, 2009.

Electro-Ceramics Lab. Electrical Properties of SrBi 2 Ta 2 O 9 Thin Films Prepared by r.f. magnetron sputtering Electro-ceramics laboratory Department.

Deposition Techniques for Thin Films and Sensing

Ion Beam Analysis of the Composition and Structure of Thin Films

Atomic Layer Deposition - ALD

2-D Nanostructure Synthesis (Making THIN FILMS!)

Thin Oxides The new frontier. Volume 43, No Special Issue on Ultrathin Oxides.

This is standard 4-point probe configuration. You can source current through the left probes and measure the voltage through the right probes. OPTICAL.

ALD Oxides Ju Hyung Nam, Woo Shik Jung, Ze Yuan, Jason Lin 1.

Sputtering deposition of metals and dielectrics Vijay Parameshwaran EE 412 Final Presentation 31 May 2011.

Process integration Wafer selection active role for the wafer ? passive role ? –thermal conductivity –optical transparency –flat,

Optical thin films for high temperature gas sensing in advanced power plant applications Plasmon resonance of TiO 2 / Au at extreme temperatures Presented.

Protective Coatings against Liquid Metal Embrittlement Protective Coatings against Liquid Metal Embrittlement.

Find the top three elements in the Earth’s crust ElementPercentage in the Earth’s crust Aluminium Calcium Iron Oxygen Silicon Sodium Others

Nathan Steinle, Barry D. Koehne, Ryan Cottier, Daniel A

Thin films technology for RICH detectors

Simplified process flow for bonding interface characterization

Thin film technology, intro lecture

ASPERA Technology Forum 20/10/2011

1) Wafer Cleaning Oxidizing – Field Oxide

List of materials which have been evaporated:

Do you know the Elements???

Periodic Table Element flashcards

Chemistry of glaze.

1.6 Magnetron Sputtering Perpendicular Electric Magnetic Fields.

Example Ni-base superalloy

Naming compounds 30 November 2018.

Deposition 27 and 29 March 2017 Evaporation Chemical Vapor Deposition (CVD) Plasma-Enhanced Chemical Vapor Deposition (PECVD) Metal Organometallic CVD.

文献岳仑仑.

Thermal oxidation Growth Rate

Reverse the voltage Photo Electric Effect

Increase in Ease of Oxidation

Deposition Techniques 5 and 8 April 2019

Deposition 30 March And 1 April 2016

Presentation transcript:

Tecport E-beam Evaporator Process parameters. METALS: 1.Aluminium. 2.Chromium. 3.Gold. 4.Titanium. 5.Hafnium. 6.Nickel. OXIDES: 1. Aluminium Oxide. 2. Silicon Dioxide. 3. Titanium Oxide. 4. Indium – Tin Oxide. List of materials which have been evaporated:

Aluminium (Al) Base pressure:2.1E-6 Torr. Deposition pressure:2.3E-6 Torr. Rate of deposition:5 Å/s. Measured thickness (Dektak): nm. Annealing:Annealed at 450°C, with forming gas. Sheet Resistance before annealing:0.124 Ω/□. Sheet Resistance after annealing:0.121 Ω/□. Resistivity:0.035 µΩ m. Process parameter:

Al - XRD Data:

Base pressure:3.0E-6 Torr. Deposition pressure:2.2E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):52.26 nm. Sheet Resistance.117 Ω/□. Resistivity:52.26E-9 X 117 = 6.1 µΩ m. Chromium (Cr) Process parameter:

Cr - XRD Data:

Gold (Au) Base pressure:4.2E-6 Torr. Deposition pressure:8.89E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak): nm. Sheet Resistance:0.258 Ω/□. Resistivity: E-9 X = µΩ m. Process parameter:

Au - XRD Data:

Titanium (Ti) Process parameter: Base pressure:2.0E-6 Torr. Deposition pressure:2.17E-6 Torr. Rate of deposition:4 Å/s. Measured thickness (Dektak):60 nm. Sheet Resistance:17.5 Ω/□. Resistivity:17.5 X 60E-9= 1.05 µΩ m.

Ti - XRD Data:

Ti - XPS Data: From XPS data shows that the atomic concentration of O 2 is more on the surface and with depth it is decreasing and the atomic concentration of Ti is increasing with depth.

Hafnium (Hf) Process parameter: Base pressure:3.26E-6 Torr. Deposition pressure:1.9E-6 Torr. Rate of deposition:3 Å/s. Measured thickness (Dektak):18.23nm. Sheet Resistance:145.5 Ω/□. Resistivity:145.5 X 18.23E-9= 2.65 µΩ m.

Hf - XRD Data:

Nickel (Ni) Process parameter: Base pressure:3.2E-6 Torr. Deposition pressure:8E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):65.3 nm. Annealing:Annealed at 450°C. Sheet Resistance before annealing:5.09 Ω/□. Sheet Resistance after annealing:5.75 Ω/□. Resistivity after annealing:37.5E-8 Ω m.

Ni - XRD Data (Before annealing):

Ni - XRD Data (After annealing):

Aluminium Oxide (Al ): Process parameter: Base pressure:4E-6 Torr. Deposition pressure:8.71E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):150.5 nm. Measured thickness (Ellipsometer):133 nm. ANALYSIS:

Aluminium Oxide (Al ) with O 2 : Base pressure:3E-6 Torr. Deposition pressure:4.86 E-5 Torr. Rate of deposition:1 Å/s. Flow rate (O2):1 sccm (O2 started 1 min before deposition). Measured thickness (Dektak):150 nm. Measured thickness (Ellipsometer):144 nm. Process parameter:

ANALYSIS:

Silicon Dioxide (SiO 2 ): Process parameter: Base pressure:2E-6 Torr. Deposition pressure:6E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):134 nm. Silicon Dioxide (SiO 2 ) with O 2 : Process parameter: Base pressure:2E-6 Torr. Deposition pressure:4E-5 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):150 nm.

ANALYSIS: SiO2 Vs. SiO2 with O2

Titanium Oxide (TiO 2 ): Process parameter: Base pressure:4.8E-6 Torr. Deposition pressure:4E-5 Torr. Rate of deposition:1 Å/s. Flow rate (O2):1 sccm. Measured thickness (Ellipsometer):77.6 nm

ANALYSIS: wavelength Vs. refractive index and extinction coefficient: Wavelength (nm)NK E E-006