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Thin films technology for RICH detectors

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Presentation on theme: "Thin films technology for RICH detectors"— Presentation transcript:

1 Thin films technology for RICH detectors
André Braem, CERN, PH-DT2 department Functionality Production technologies Performance Presented at the CBM-RICH workshop March 2006

2 Thin films in RICH detectors
The light yield is directly proportional to the performance of the coatings Reflective coating (R~90%) Anti-reflective coating (T 92%  ~98%) Photocathode (QE ~25%) Wavelength shifter

3 Adherence and barrier layer
Reflective coatings Protection and reflectance enhancement dielectric layers Metallic reflector Adherence and barrier layer Substrate (glass, Be, plastics…)

4 Adherence and barrier under-layer
A thin (~20nm) layer of Chromium or Nickel is generally used to promote adherence on most substrates. A barrier layer (SiOx, CrOx…) is mandatory when the substrate material risks to react with the metallic reflective layer. Inter-diffusion of aluminum (reflective layer) and gold (replicated substrate) : Cr + SiO diffusion barrier (CF mirror of CERES inner RICH) 2 months at 100˚C : A B C Al + MgF2 glass Au Cr + SiO Al + MgF2 glass Al + MgF2 Au glass

5 Metallic reflective coatings
Aluminum is the best metallic reflector for a broad band reflectivity in the far UV. 220 < l < 600 nm  R~90% in VUV the reflectivity of aluminum is strongly dependent on: - The production parameters such as vacuum quality, deposition rate etc.. - The substrate roughness (<1.5nm rms) - The surface oxidation  a protective layer is required. Magnesium fluoride is commonly used as single protective layer for VUV mirrors “Standard” VUV coatings for Cerenkov detectors: DELPHI, CERES, HADES, COMPASS…

6 Metal multi-dielectrics reflective coatings
Reflectivity enhancement at given wavelength by exploiting interferences Aluminum over coated with n pairs of transparent films of high (H) and low (L) refractive index. Al reflector Cr adherence layer n pairs LH photons substrate low index high index qinc. Dielectric films like SiO2, MgF2 (L-materials) or HfO2, Nb2O5, TiO2 (H- materials) are used. Hard mirror surface can be achieved  good mechanical protection Technology limited for l > 220nm due to the lack of H-materials which are transparent in VUV.

7 Metal multi-dielectrics reflective coatings
Simulated reflectivity of aluminium + pairs of SiO2 – HfO2 layers optimized for l = 300nm

8 Reflective coating optimized for LHCb RICH2
Detection efficiency of an HPD detector (quartz window), with and without double reflection from the coated mirror, qinc. = 30º. Reflectivity of Al + 1 pair SiO2/HfO2 on glass, qinc. = 30º l [nm] Measurement Simulation <HPD QE,(2-6 eV)> = 0.176 <HPD QE · R2 (2-6 eV)> = 0.149 Absorbance in HfO2 film !

9 Anti reflective single layer coatings
MgF2 is generally selected for single layer broad band AR coatings On quartz: Optimum n1 = 1.22 ! n MgF2 (250nm) =1.412 !  The surface reflectivity is reduced by a factor 2. Best performance if Low refractive index (1.2 < n < 1.4) can be obtained with porous sol gel silica coatings.

10 Anti reflective multi-layers coatings
Pairs of low and high refractive index materials Many solutions are available in coating industry for UV-VIS light.  Low residual reflectivity but in a reduced band width !

11 Coating technology Metals and dielectrics are evaporated in a high vacuum deposition plant. Substrate (rotation) Thickness monitor Aluminium is evaporated from a Tungsten filament Dielectrics are evaporated from an electron gun source

12 Deposition parameters
Layer Rate [nm/s] Thickness [nm] Pressure [mb] Cr x10-7 Al > x10-7 MgF x10-7 SiO x10-5 (O2) HfO x 10-5 (O2) 1 Optimized for l=160nm 2 Optimized for l=275nm Well known technology available from most industrial partners - Substrate roughness Residual pressure Aluminium deposition rate Delay between Aluminium and MgF2 depositions But for optimal reflectivity in VUV some critical parameters must be well under control:

13 Series production of mirrors for LHCb RICH2 @ CERN
Average reflectivity ( nm)

14 VUV reflectivity measurements
lnm Essential for the production of VUV mirrors ! D2 lamp VUV monochromator Rotating mirror Meas. PM Ref. PM

15 Photocathodes for RICH detectors
1). Alkali halide in gas photodetectors - Large area CsI reflective photocathodes - Sensitive in the eV range - Robust and transferable (in moisture free environment) h e- 2). Bi-alkali Antimonide in vacuum tubes - Semitransparent encapsulated photocathodes - Sensitive in the 2 – 4 eV range (K2CsSb + UV extended glass window)

16 Photocathodes for RICH detectors
CsI PC: coating under vacuum and detector assembly under gas PCB production CsI deposition PC transfer & storage detector assembly & operation HPDs : PC and detector assembly inside vacuum chamber Operational photon-detector Focusing electrodes Silicon sensor FE electronics Vacuum seal Photocathode processing Need state of the art technologies (UHV, chemistry, thin film coating, vacuum sealing, encapsulated electronics)

17 CsI Photocathodes production
Vacuum evaporation of CsI powder from 4 sources. protective box pcb substrate Thickness monitor PCB substrate 4 CsI sources + shutters Uniform deposition of 300 nm CsI Deposition rate: ~1nm/s Substrate temperature: 60˚C Pressure ~6 x 10-7mb Heat post-treatment: 60˚C , 8-12hrs CsI PC transferred in a protection box under Argon atmosphere after quality control Remote controlled enclosure box

18 CsI photo-current measurements
Photo-current scan on PC46: Mean value <Inorm> = 3.71 min-max variation 6% QE obtained from test beam measurement on 6 CsI PCs All CsI data from H.Hoedlmoser CERN ALICE/HMPID

19 Series production of CsI PCs
Initial current level before heat enhancement phase Current level after enhancement phase

20 Development of HPD vacuum tubes at CERN
Bi-alkali photocathode e- dV = 20kV Ee = 20 keV Indium joint Si sensor In silicon: 3.6eV  1 e/h pair 20keV  5000 e/h Front end electronics Spherical HPD PET HPD

21 The HPD development plant
Turbo Pump “External” photocathode process Ultra-high vacuum technology

22 Performance of bi-alkali photocathodes
QE of a K2CsSb photocathode (HPD PC87) Radial dependence of HPD (PC68) QE for =230, 290 and 350 nm.

23 Wavelength shifters coatings
P-Terphenyl: Absorbtion range nm ; emission peak at 385 nm A dedicated plant has been set-up for coatings on PMTs Vacuum evaporation from a molybdenum crucible: Pressure ~5x10-5 mb Thickness >1 mm Rate > 10 nm/s Vaporization temp. < 200˚C Weak mechanical resistance A protective layer of 30nm MgF2 is required ! Inhomogeneous coatings on glass surfaces Alternative coating method:  Solvent spray with transparent binder

24 Performance of P-Terphenyl
Publication of G.J.Davis NIM B 117(1996) P-terphenyl evaporated at pressure of x 10-1 Torr External QE of p-terphenyl at ~optimal thickness Deterioration in efficiency of p-terphenyl after a six month period (175 nm incident light) Ext. QE: Nph emitted (4p) / Nph incident

25 Summary and conclusions
Functional coatings play an important role at various places in a Cherenkov detector. The light yield is directly proportional to the performance of the coatings. Coatings exist for high reflectivity, Anti-reflection, photosensitivity and Wavelength shifting. For detectors in the visible/near UV range standard industrial solutions are available. For applications in the far UV / VUV technical challenge and cost increase drastically. Reliability and long term stability become issues. The light yield is directly proportional to the performance of the coatings Coatings exist for high reflectivity, AR, photosensitivity, WLS For detectors in the visible/near UV range standard industrial solutions exist. For applications in the far UV / VUV technical challenge and cost increase drastically. Reliability and long term stability become issues.

26 Spares

27 CsI quality control: VUV-scanner
2d scan of photo-current across the whole photocathode Relative measurement to a reference CsI photomultiplier Reference CsI PM PC current reading D2 light source +100V PM Translation stage

28 Heat post-treatment CsI deposition performed at 60°C
All PCs have similar initial response Heat post treatment at 60°C for 24hrs The PC response increases 20-50% during the first hours.

29 Heat post-treatment Decreasing response observed on some PCs !
The presence of residual water in the vacuum chamber is believed to strongly influence the photo-emission properties of the highly hygroscopic CsI film !


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