THE MEMORY ELEMENTS. Words in high-speed memory Read-write random-access memory.

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Presentation transcript:

THE MEMORY ELEMENTS

Words in high-speed memory

Read-write random-access memory

The Memory Units 1 b – 1 bit 1 Kb = 1024 (2 10 ) b – 1 kilobit 1 Mb = 1024 (2 10 ) Kb = (2 20 ) b – 1 megabit 1 Gb = 1024 (2 10 ) Mb = (2 30 ) b – 1 gigabit 1 Tb = 1024 (2 10 ) Gb = (2 40 ) b – 1 terabit 1 byte = one 8 bit word (a sequence of 8 bits at the same address) 1 B – 1 byte 1 KB = 1024 (2 10 ) bytes – 1 kilobyte 1 MB = 1024 (2 10 ) KB = (2 20 ) B – 1 megabyte 1 GB = 1024 (2 10 ) MB = (2 30 ) B – 1 gigabyte 1 TB = 1024 (2 10 ) GB = (2 40 ) B – 1 terabyte

Basic static memory cell

Linear- select SRAM

Decoders

Decoders condt

Two-dimensional static memory cell

Two-dimensional memory organization

Two-dimensional memory organization condt

Comparison of numbers of electronic elements used in one-dimensional and two-dimensional systems of memory Number of memory cells Linear selection Two- dimensional selection 1664 transistors16 transistors transistors768 transistors 1 megabit (2 20 )  transistors  transistors

Bus for computer system

IC package of RAM chip

Interfacing chips to a bus

Layout for adding memory to a bus

Another IC package of RAM chip

Dynamic random-access memories

DRAM timing signals in normal and paging mode operation

Read-only memories

Read-only memories condt

Types of read-only memories MROM (Eng. Mascable ROM) PROM (Eng. Programmable ROM) EPROM (Eng. Erasable and programmable ROM) EEPROM (Eng. Electrically erasable and programmable ROM) An important application of EEPROM: Flash-BIOS