Slide # 1 ELCT 774: Advanced Semiconductor Characterization Dr. Goutam Koley Room 3A12, , Lecture Hours: Mon & Wed 4.05 AM – 5.20 PM SWEARINGEN 2A18 Office Hours: By appointment only Other information: To be posted on the website

Slide # 2 Course Information Objective: To learn advanced semiconductor materials charcaterization techniques (special emphasis on nanoscale materials and their characterization) Reference books: Semiconductor measurements and Instrumentation: W. R. Runyan and T. J. Shaffner, Second Edition, McGraw Hill, ISBN Semiconductor material and device characterization, Dieter K. schroder, 2 nd Edition, John Wiley and Sons, New York, 1998, ISBN # Other notes and handouts will be given from time to time, or references posted on the course website

Slide # 3 Schedule and Grading Grading:Midterm:30 % Final:30 % Project presentation and report:40 % Class: Aug 26 – Dec 4, 28 lecture days Final Exam Week: Dec Approximate Grades: A B B C C 70 – 74 D+ 65 – 69 D 60 – 64 F <60

Slide # 4 Course Contents 1  Hall measurements and mobility (2)  Optical characterization (2)  Photoluminescence  Cathodoluminescence  Scanning probe microscopy (4)  Atomic force microscopy  Scanning tunneling microscopy  Scanning electron microscopy (2)  Basic principles  Electron beam induced current mapping  Cathodoluminescence

Slide # 5 Course Contents 2  Transmission electron microscopy (2)  Modes of operation  Scanning TEM  Selective area diffraction  Auger Electron Spectroscopy  Secondary Ion Mass Spectrometry  Special characterization techniques for nanoscale structures (3)  Energy dispersive X-ray Spectroscopy  Focused Ion Beam technique  Raman spectroscopy  Discussion on Graphene: the new nanomaterial

Slide # 6 Class schedule Lectures: 14 – 15 Classes Midterm: 1 Class Lab visits: 4 Classes (1 AFM, 1 SEM, 1 TEM, 1 Raman) Student Presentations: 8 Classes Final review: 1 Class Note: A project report must be submitted by each of the students at the last day of classes (final review day)

Slide # 7 Project descriptions Projects must be related to Nano List of projects 1.Atomic force microscopy applications to Nanotechnology 2.Nanowire characterization using SEM micro- characterization (SEM, CL, EBIC, EDX) 3.Nanowire characterization using TEM micro- characterization (STEM, SAD, EDX)

Slide # 8 Project descriptions 2 5. Carrier Mobility/Hall effect in Graphene 6.Optical characterization of Nanostructures 7.Mechanical characterization of Nanostructures 8.Raman and EDX characterization of Graphene 9.Characterization of 2D materials beyond graphene 10.Characterization of Nanostructures using special AFM associated modes (surface potential, capacitance, current-voltage, etc.) N.B. Please me know your selected project topic latest by September 9

Slide # 9 Mobility 1 1.At high electric field, the velocity of electrons CANNOT increase linearly with voltage due to increased scattering from the lattice vibrations (electron loses the entire extra energy from electric field immediately) 2.At a particular electric field called the critical electric field, the mobility becomes almost zero (actually not defined anymore), and the velocity of the electrons become almost constant w.r.t. the electric field Slope gives the mobility only at low electric field Electron drift velocity saturates at high electric fields for Si. is valid only at low field Mobility represents the ease of electrons and holes to flow through the crystal under an externally applied electric field.