Silicon  -Calorimeters at Saclay Main Architecture: All-Si STANDARD Technologies including collective approach for large (1024 pixels) buttable X-rays arrays. (Based on Herschel Development at LETI/LIR) “MESA process” for Thermometer realization. High temperature diffusion after implantation  reliable homogeneous thermometer (as NTD Ge). Known and reliable Technologies. Extrapolation from High impedance (cf. IR exp.) to low impedance sensors. High Impedance Readout Circuitry (MUX based on Herschel Development) cryogenic followers, pixel read-out on trigger. R&D now : Tantalum Absorber : Metallurgy and modeling. Absorber on the thermometers matrices. –Gluing of the absorber membrane on a silicon holder and micromachining –Hybridization through Indium Versus Gluing Proximity Electronics : Cryogenic Followers (HEMT or MOSFET)

Silicon  -Calorimeters at Saclay

Figure 2 : under-bump metallurgy Photoresist Figure 3 : Photolithography defining Indium volume Figure 4 : Indium deposition Figure 5: Photoresist lift-off Figure 6 : Indium reflow Mesa Thermometer Figure 1 : Reception of the absorber Passivation Indium Bump Hybridisation Silicon  -Calorimeters at Saclay

The indium bump process allows for a self alignment (through the full array) between the absorbers and the sensors which contrasts with a classical gluing process. Figure 9 : self alignment x Figure 8 : placing and heating  Figure 7 : alignment  Silicon  -Calorimeters at Saclay

General Layout on double-SOI substrate. X-ray Array and Followers Array on the same wafer at 2 different Temperatures.  -calorimeters around 100 mK and Followers around 2K.  Thermal insulation via superconducting leads, etching of the substrate and IR insulation. Buttable on 2 sides allowing to fill any FOV.

Silicon  -Calorimeters at Saclay LETI/LIR (Grenoble) develops the Si Technologies. (P. Agnese) Prototypes tested at CEA-Saclay/Dapnia/Sap in coll. with Dapnia/SEDI (X.F. Navick) 2 test cryostats available (dilution, down to 10 mK) HEMT developed in coll with LPN/CNRS. (Young-Jin) Common development with EDELWEISS Absorber developed in collaboration with CSNSM/CNRS (L. Dumoulin) Thermal treatment, coating and measurement of thermal characteristics at CSNSM Thermal Modellization of Absorber and Links by Palermo (G. Vaiana). General Architecture and MUX at Sap (C. Cara). First Fundings from CEA/Sap and CNES

Main Characteristics & Conclusions: Full Energy Coverage (up to 30 keV) Spectral Resolution (~ keV) Quasi-Classical MUX Low Count rate (up to 10 Hz) Large covering of FOV Good (Excellent) filling Factor Silicon  -Calorimeters at Saclay