Synthesis and Applications of Semiconductor Nanowires Group 17 余承曄 F Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Outline  Synthesis of semiconductor nanowires  Electrical device  Optical device  Nanowire sensor Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Laser-assisted Catalytic Growth (LCG) Growth system : Graduate Institute of Electronics Engineering, NTU Nd-yttrium-aluminum-garnet laser (wavelength, 532 nm) Nanoelectronics

Laser-assisted Catalytic Growth (LCG) Growth mechanism : Graduate Institute of Electronics Engineering, NTU  Vapor-liquid-solid (VLS) growth model  Catalyst : Fe, Ni, Au, … Nanoelectronics

Si nanowires : Laser-assisted Catalytic Growth (LCG) Graduate Institute of Electronics Engineering, NTU Scale bar:100nmScale bar:10nm Nanoelectronics

Laser-assisted Catalytic Growth (LCG) Graduate Institute of Electronics Engineering, NTU Ge nanowires : Scale bar:9nmScale bar:5nm Nanoelectronics

Nanowire diameter control Graduate Institute of Electronics Engineering, NTU Nanoelectronics SiNW diameters grown from 5-, 10-, 20-, and 30-nm-diam Au nanoclusters.

Solution-liquid-solid (SLS) Synthesis  Growth of InP, InAs, and GaAs (III-V)  Low-temperature ( ~203°C)  Potential limitation ： catalyst must melt below the solvent boiling point Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Thermal evaporation method Experimental apparatus : (1)furnace; (2) quartz tube; (3) quartz cover; (4) ceramic boat; (5) pure silicon powder; (6) iron-patterned silicon substrate. Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Thermal evaporation method Graduate Institute of Electronics Engineering, NTU Nanoelectronics  Pre-patterned Fe on the growth surface  No laser need

Template-assisted Synthesis Process flow for preparing ordered nanowires with a template Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Template-assisted Synthesis Graduate Institute of Electronics Engineering, NTU Nanoelectronics

low-temperature VLS method  using low-melting-point metals, such as Ga, In, and Bi, as the solvent  SiHx(g)+xH(g) Ga-Si(l)+xH2(g)  Ga–Si alloy is possible at temperatures as low as 100 °C. Graduate Institute of Electronics Engineering, NTU Nanoelectronics Ga

low-temperature VLS method nanowires with uniform diameters distributed around 6 nm using gallium as the molten solvent, at temperatures less than 400 °C in hydrogen plasma Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Nanowire superlattice Upon completion of the first growth step, a different material (red) can be grown from the end of the nanowire. Repetition of steps leads to a compositional superlattice within a single nanowire. Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Nanowire superlattice GaAs/GaP nanowire junctions Graduate Institute of Electronics Engineering, NTU Nanoelectronics Scale bar:10nm Abrupt junction :  Nanowire diameter  Catalyst  Growth temperature

Nanowire superlattice a 40-nm-diameter GaP(5)/GaAs(5)/GaP(5)/GaAs(5)/GaP(10)/GaAs(5)/GaP(20)/Ga As(5)/GaP(40)/GaAs(5)/GaP(5) superlattice Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Junction devices Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Bipolar Transistor Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Invertors Graduate Institute of Electronics Engineering, NTU Nanoelectronics

PN junction & FETs Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Nano-logic gates Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Nanowire Computation Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Nanowire LEDs InP LED Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Nanowire LEDs Graduate Institute of Electronics Engineering, NTU Nanoelectronics 65(n)+68(p)nm Peak at 820nm 39(n)+49(p)nm Peak at 680nm Bulk bandgap of InP :925nm

Nanowire Sensor for PH Detection Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Real-time detection of protein binding Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Real-time detection of reversible protein binding Graduate Institute of Electronics Engineering, NTU Nanoelectronics

Real-time Detection of Ca 2+ Ions Graduate Institute of Electronics Engineering, NTU Nanoelectronics

References Graduate Institute of Electronics Engineering, NTU Nanoelectronics 1. A. M. Morales and C. M. Lieber, Science 279, 210 (1998). 2. M. S. Gudiksen et al., Nature 415, 617 (2002). 3. B. H. Hong et al., Science 294, 348 (2001). 4. T. Thurn-Albrecht et al., Science 290, 2126 (2000) 5. A. J. Yin et al., Applied Physics Letters 79, 1039 (2001). 6. M. Paulose et al., Applied Physics Letters 81, 153 (2002). 7. Y. Cui and C. M. Lieber, Science 291, 851 (2001). 8. Y. Huang et al., Science 294, 1313 (2001). 9. Y. Cui et al., Science 293, 1289 (2001 ).

References Graduate Institute of Electronics Engineering, NTU Nanoelectronics 10. M. K. Sunkara et al., Applied Physics Letters 79, 1546 (2001). 11. T. J. Trentlor et al., Science 270, 1791 (1995) 12. Yi Cui et al., Applied Physics Letters 78, 2214 (2001). 13. Z. H. Wu et al., Applied Physics Letters 81, 5177 (2002). 14. Qian Gu et al., Applied Physics Letters 76, 3020 (2000).