ESE 111 – Nanofabrication and Technology

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Presentation transcript:

ESE 111 – Nanofabrication and Technology ENIAC DEC PDP-8 IBM PC Pentium 4 PC Microelectronics ==> Nanoelectronics Make this transition happen … and the other applications that are enabled by nanoscale science and technology

Evolution of Electronics Vacuum tube ENIAC = Electronic Numerical Integrator and Computer First Transistor, 1947 Bell Labs Discrete Transistor

Intel Core i7 Processor with 45 nm Transistors

The Fabrication Facility of Today 300 mm wafer Fabrication http://www.youtube.com/watch?v=inoOAOOMjHo Intel

Moore’s Law

Other Electronic Applications = “More than Moore” Silicon and New Materials carbon nanotubes Rogers, UIUC Organic and nanocrystalline semiconductors Rogers, UIUC Kagan, Penn Si nanowires nanocrystals graphene organic materials carbon nanotubes

Alternative, Low-Cost Fabrication Printable Electronics – Spin, Dip, Spray, Print, Imprint …. From Solution Spin-coating Printing Krebs, Denmark Dip-coating Imprinting Example: nanocrystals In general for solutions Mesopotamian Templates 600 AD 25 nm holes

Examples of Some Electronic and Optoelectronic Applications Printed Electronics Samsung Konarka Solar Cells RFID Tags Poly IC Sony OLED TV E-textiles Poly IC E-Paper Plastic Logic Flexible Display http://www.youtube.com/watch?v=-k6r2HQY9Ws

Flexible Electronics Analog Electronics Scaling to allow faster operation Digital Electronics Kagan group

BioElectronics Litt, Penn and Rogers, UIUC Utah Electrode Array 10 x 10 array of electrodes ¼” x ¼” in size Litt, Penn and Rogers, UIUC

Light at the Nanoscale

Nanophotonics and Plasmonics

Description using Maxwells equation Metal Nanoparticle Assemblies as Building Blocks for Optical Metamaterials Designing composite materials with electromagnetic properties not found in nature and not observed in the constituent materials cloaking superlenses sensors lithography a<<l Effective medium Description using Maxwells equation metatronics = optical nanocircuits Engheta, Penn

Designer Metamaterials Au NC dispersion substrate PDMS template Ligand exchange Wavelength (µm) Transmittance (a.u.) d Scale bar = 1µm Kagan group

Nanodevices and Nanosystems Curriculum New ESE curriculum New curriculum (class of 2018): ESE 218 Electronic, Photonic, and Electromechanical Devices (Prof. Kagan, Fall) Sophomore ESE 321 Physics and Models of Semiconductor Devices (Prof. Bassett, Fall) ESE 310 Electric and Magnetic Fields I (Prof. Engheta, Spring) Junior ESE 521 Physics of Solid State Energy Devices ESE 460/574 Semiconductor micro-fabrication ESE 525 Nanoscale Science and Engineering ESE 509 Waves, Fibers and Antennas for Communications ESE 510 Electromagnetic and Optical Theory Senior

ESE 218 Electronic, Photonic, and Electromechanical Devices Intel IBM Electronics Photonics Electromechanics

Samsung Galaxy