Standard Products Business Promotion Consumer and Industrial Business Unit

Power Management Devices and Standard Product Group

Product Promotion Goals Expand N. American standard product promotion beyond lv-MOSFETs to be be able to better leverage existing customer and channel relationships by selling more products into existing accounts (i.e. MCU accounts) This is a top down directive from Akao-san and has the code name SPAT in Japan. But, our standard products still tend to be fairly limited in their target applications. For example, our 30V MOSFETs primarily match CPU/GPU application requirements, many of our MCU customers have no need for the lv MOSFETs, so other products need to be added to our promotional efforts to leverage our customer base. So, expanding the breadth of our promotion is essential.

Product Promotion Status What products are available for general promotion? (Parts are price competitive, AE, Marketing, Sample support all available) 20V to 30V MOSFETs Mid-Voltage MOSFETs (40V to 80V is competitive, 80V+ non-competitive) Triacs/Thyristors IGBT’s (Price competitiveness under evaluation) What products are available for limited promotion status? Zener & Schottky Barrier Diodes for Mobile Apps Sawn Zener Diodes for LED lpSRAM & EEPROM in ‘less’ price competitive situations Small Power MOSFETs What products have ‘restricted’ promotion status? Li+ Smart Battery IC restricted to just major NBPC OEM. (due to N. American support limitations) PFC to just one test N. American Customer (due to N. American support limitations) Other MSIG Devices (due to N. American support limitations) High Power MOSFETs (due to non-competitive pricing) Other Vregs (due to non-competitive pricing)

Discrete, Power, & Standard Product Support Matrix

Discrete, Power, & Standard Product Support Matrix IMPORTANT NOTE: For high voltage devices, like Triacs and IGBT’s, and for certain MSIG devices (i.e. PFC) we don’t have local AE expertise, instead we rely on good communication with Japan based AE’s. For the devices defined as promotion, or limited promotion, we’ve established that we can get fast and reliable support from Japan.

Discrete, Power, & Standard Product Offline & Online AE and Sales Resources am.renesas.com: eCommerce Tree is enabled for low voltage MOSFETs This includes purchasing (through Digikey) and Sampling function We will activate for at least IGBT and Triac as well. Virtual Power Lab Buck converter design tool including auto FET selection, Spice Models, Dynamic Data sheets. Customer Presentations are available online for each product family. Parametric search Cross reference tool RSSI Sales Training Presentations for each product category ( I will show one example for diodes) www.renesas.com: (global site) Many application examples showing standard product usage with MCU’s. Example: Inverter

Discrete, Power, & Standard Product Offline & Online AE and Sales Resources Santa Clara Sample Warehouse for lvMOSFET (Contact: Jessica.yamada@renesas.com) JIMSIM Advanced Buck Converter Simulation Tool (Contact: jim.comstock@renesas.com) Jim can rapidly and accurately compare FETs from various competitors under a wide range of operating conditions 3) Version 1 EZ-Like pdf for promotion products 1K pricing still under analysis to make if full EZ. OTHER: Tak Taoyama’s (tak.taoyama@renesas.com) has been managing the N. American Sales Promotions for Triacs, Thyristors, and IGBT’s An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the caravan schedule.

How have we won power device business? Provide parts with better price:performance than incumbent or competitor. This typically requires gathering application data from customer. Key then is to have, and to identify, the best part. This often requires complex analysis, but We’ve found we can often conduct this step through coordination with Japan based AE’s. Example– See xBox. And, engineers often aren’t especially loyal to their past power device supplier. Their ready to change suppliers for better price:performance. So, providing customers with better price:performance parts is the value proposition they care about. Or, one exception, we win when incumbent suppliers have shortages.

Study about Microsoft X-box

XBOX360 ELITE M/B □NTD4813NH ○NTD4806NH GPU CPU DDR Memory IRF8915

XBOX360 ELITE Parts list (DC/DC MOSFET) Characteristics of current MOSFET part# Portion VDSS (V) VGSS (V) RDS(on) mohm Rg (Ω) Ciss (pF) Coss (pF) Crss (pF) VGS=4.5V VGS=10V NTD4813NH Hi-side 30 20 20.9 10.9 0.55 796 228 119 NTD4806N Lo-side 7.9 4.9 1 1,901 518 245 Renesas proposal part# Portion VDSS (V) VGSS (V) RDS(on) mohm Rg (Ω) Ciss (pF) Coss (pF) Crss (pF) VGS=4.5V VGS=10V 2SK4212 Hi, Lo-side 25 20 8.5 5.5 3.6 1,131 244 153

Comparison PKG Surface Temp. Evaluation data using actual XBOX360 Comparison PKG Surface Temp. Ph-2-H Ph-1-H Test Conditions: ･Game Demo ･Wait Time = 15min Ph-2-L1 Ph-1-L1 Ph-1-L2 Ph-2-L2 Almost same temperature!

Comparison spike Voltage Current. Hi:NTD4813NH x1 Lo:NTD4806N x2 Renesas Proposal Hi:2SK4212 x1 Lo:2SK4212 x2 Vpeak=20.4V Vpeak=18.0V Low Noise! Lower than current devices. V spike.

Comparison Efficiency (Sim.) condition 1H/2L 1phase Vin=12V Vout=1.2V Vdr : H=6V L=12V Fpwm=275kHz L=560nH BEST Efficiency! part# Portion VDSS (V) RDS(on) mohm Rg (Ω) Ciss (pF) Coss (pF) Crss (pF) VGS=4.5V VGS=10V NTD4813NH Hi-side 30 20.9 10.9 0.55 796 228 119 NTD4806N Lo-side 7.9 4.9 1 1,901 518 245 2SK4212 Hi, Lo-side 25 8.5 5.5 3.6 1,131 244 153 DPAK_JET* 9.6 7 0.8 1,219 250 77 DPAK_BEAM* 6.7 1.4 2,291 329 177 Small Capacitance! *Under planning (Estimation data)

Thermal Analysis Data Analysis Condition Modeling of GPU Block for Thermal Simulation PowerMOS Package:DPAK PCB GPU Block Capacitor Modeling Inductor Airflow Distribution Capacitor 2.0 m/s Position where Airflow is displayed

Triac and Thyristor

Triac and Thyristor: Definition What is a Triac? A bi-directional electronic switch which can conduct current in either direction when triggered; no polarity Used in AC circuits because it allows for large power flows with milliampere scale control currents

Triac and Thyristor: Applications Triacs Thyristors AC Control Control rectifier Control capacitor (LC resonance) 電動工具 Heater Solenoid Valve Motor Others Lamp Bike Regulator） Electric Fan Fan heater(Ignitor) Washing machine SMPS (Inrush current Protection) Rice cooker Boat Jet ski（Ignitor） Vacuum Cleaner Inverter Lamp (Inrush current Protection) Printer, Copier FAX Electric tool Leakage detector Toilet seat SSR Lamp Dimmer Camera (strobe) Automatic Dish washer

Triac: Product Overview VDRM (V) TO-3PFM 600, 1500V TO-3P 600V TO-220FN 400, 600, 700, 800, 1000V TO-220FL 600, 700V TO-220F 600, 700, 800, 1000V 600, 700V TO-220 600V TO-220S 600V 600V MP-3A 600, 700V TO-92 600, 700, 800V SOT-223 700V UPAK 600V 0.8 2 IT(RMS) (A) 6 30 1 3 8 10 12 16 20 25 5

Thyristor: Product Overview VDRM (V) TO-3PFM 600V TO-220FN 600V TO-220F 600V TO-220 600V DPAK(L)-(3) 600V MP-3A 600V TO-92 UPAK 400, 600V MPAK 400V 0.1 0.3 0.8 0.5 1 3 5 6 8 10 12 16 25 IT(AV) (A)

Triac and Thyristor: Roadmap Planar 　Aｌ Ribbon 600V～700V (Tj=150℃) General High Commutation Planar 4～16A 800V (Tj=150℃) Under Development High Commutation Planar High Power 400V～1500V ～30A (Tj=125/150℃) General High Power Planar 　LB series 600V (Tj=150℃) General General Planar 　LG series 600V～800V (Tj=150℃) High Voltage / High Temperature General & Low Inrush guarantee 150℃ Planar 600V～700V ～20A (Tj=150℃) New package TO-220FL Low Inush Planar LD series 600V～700V (Tj=150℃) Planar 　LA series 600～1000V (Tj=125℃) General For low inrush current Under Development New type Planar technology (Tj=150℃) General Planar technology (Tj=125℃) General guarantee 150℃ Triac General Glass Passivation (Tj=125℃) High reliability Thyristor ‘00 ‘02 ‘04 ‘06 ‘08 ‘10

Triac and Thyristor: Packaging Insulation Non Insulation TO-220F(2) TO-220FL MPAK SMD UPAK SMD TO-3PFM MP-3A SMD TO-220F TO-220FN DPAK(L)-(3) Other TO-92 TO-220S SMD Various Lead Forming ex. TO-220F(A8 type) TO-220 15.5±0.3 4.5±0.5 SOT-223 See Renesas Discrete General Catalog TO-3P

Triac and Thyristor: Features Planar Technology Guaranteed Max. Tj 150C High reliability Wide Lineup ★ Optimized for various applications Tj 125℃, 150℃ Triac & Thyristor High voltage, high current Repetitive inrush current Lower power loss Low inrush current Various package and Lead Forming ★ Optimized for your design Insulation, Non-insulation Surface Mount, Lead type Various Lead Forming

Triac and Thyristor: Application details necessary for part selection Application and Electrical Spec questions What kind of load is the Triac or Thyristor driving? Motor, heater, or solenoid? What is the voltage of the AC line? What is the Operating Current? What is the inrush current? (if inductive load, as with a motor) What is the competitive parts and price (from customer)? Package Questions Surface Mount or Lead Type? If Lead Type, is requirement for an Insulated or non-Insulated package?

MOSFET

MOSFET: Combined Market Share 20V-100V 2008 Billing $12.1B (Marketing Eye) $3.7B $17.3B (Gartner)

MOSFET: Ranking and Market Share Summary 20V-100V 2009 Rankings 2009 Share Vishay Fairchild IR Toshiba Rohm Alpha & Omega Sanyo Infineon Technologies On Semi 1 2 3 4 5 6 7 8 9 10 Low Voltage MOSFETs Renesas Electronics Others 7.8% ST 2.4% On Semi 3.7% Renesas 17.1% Infineon 4.4% Sanyo 4.8% Vishay 13.4% Alpha & Omega 6.1% Rohm 6.2% Fairchild 13% Toshiba 8.6% IR 12.4% Source: Market Eye, March 2009

MOSFET: Capacity and Shipments VSOF 6Mu Other 2Mu LFPAK 11Mu TO-220 13Mu Renesas Electronics: Total Low voltage MOSFET package monthly capacity 173Mu/M TO-220 13Mu D-PAK 62Mu TO-251 14Mu HWSON 15Mu SOP8 20Mu WPAK 30Mu 1.0 billion Renesas Electronics Power Management and General purpose devices shipped each month Components (1000M) 0 500 1,000

MOSFET: Target Applications ■ VR* for CPU Core, GPU, Chipset and Memory. Server , Network, Telecom Note Book PC VGA ■ Primary / Secondary use for Brick Converter and SR / Oring Switch for AC/DC Power Supply. Server , Router Telecom ■ Power Management Switch for Li+Ion Battery 　(N/B PC). *SR : Synchronous Rectification * VR : Voltage Regulator

MOSFET: Discrete and Integrated Products Roadmap

MOSFET: Low Voltage Products Roadmap

MOSFET Roadmap for PC Li+ Battery Battery capacity increasing in smaller packages BVDSS / RDS(on) typ @ 10V UMOS4 JET/BEAM UMOS6 UPA2743T1A 30V / 2.1mΩ UPA2807 30V / 3.8mΩ UPA2722UT1A 30V / 2.4mΩ UPA2721AGR 30V / 3.6mΩ UPA2720AGR 30V / 5.5mΩ UPA2742GR 35V / 4.0mΩ UPA27xxT1A 30V / 1.2mΩ Lower RDS(on) 1.x mΩclass 2.x mΩclass 3.xmΩclass 5.xmΩclass Small PKG UPA2804 30V / 5.6mΩ UPA2744UT1A 30V / 1.6mΩ UPA28XX 30V / 3.0mΩ VDSS=35V RJK0362DSP 30V / 5.0mΩ RJK0358DSP 30V / 3.2mΩ RJK0356DPA 30V / 2.2mΩ RJK0358DPA 30V / 3.4mΩ RJK03E0DNS 30V / 4.3mΩ RJK03E1DNS 30V / 5.3mΩ UMOS5 5×6×1.8 5×6×1.0 3.3×3.3×0.95 UPA27XX SOP HVSON mini-HVSON 5×6×1.7 5×6×0.8 3.3×3.3×0.8 RJK03XX WPAK WSON3030 High-End Mid-Range Low-End 2008 2009 2010 33 © 2010 Renesas Electronics Corporation. All rights reserved.

MOSFET Roadmap for Mobile Li+ Battery 2006 2008 2007 2009 Process UMOS4 UMOS5 UMOS6 6pHWSON UPA2451B 30V/~20mΩ UPA2451C 30V/~20mΩ UPA2454 30V/~11mΩ UPA2450B 20V/~17.5mΩ UPA2450C 20V/~17.5mΩ UPA2455 20V/~13mΩ 2.0 x 5.0 mm NEW 8pHUSON UPA2460 30V/~20mΩ 対象品種 （計6品種） Smaller package UPA2461 20V/~17.5mΩ 2.0 x 2.7 mm 4-pin EFIP （BGA type） UPA2351 30V/~40mΩ＊ UPA2351B 30V/~40mΩ＊ Under Plan UPA2352 24V/~43mΩ＊ UPA2352B 24V/~43mΩ＊ ～1.62 x 1.62 mm UPA2350 20V/~35mΩ＊ UPA2350B 30V/~35mΩ＊ UPA2351C 30V/~40mΩ＊ 4-pin EFLIP （LGA type） UPA2351 30V/~40mΩ＊ UPA2351B 30V/~40mΩ＊ NEW UPA2352C 24V /~43mΩ＊ Thinner/smaller CSP UPA2352 24V/~43mΩ＊ UPA2352B 24V/~43mΩ＊ UPA2350C 24V/~35mΩ＊ Parts Name: VDS / RDS(on) max VGS = 4.5V ＊ Rss(on) ：2 chip on-state resistance ～1.62 x 1.62 mm UPA2350 20V/~35mΩ＊ UPA2350B 20V/~35mΩ＊ UPA235xC 24V/~25mΩ＊ 34 © 2010 Renesas Electronics Corporation. All rights reserved. 34

MOSFET: High Efficiency “JET” Series 30% Cut RDS(on) Low On State Power Loss Low Driver Power Loss Low Switching Power Loss 27% Cut Qg 30% Cut Qgd Reduced the Thermal Temperature Capable High Current High Performance Ultra Low RDS(on) Low Qg Low Qgd Achieve High Freq. & High Slew Rate LFPAK 1.6mΩtyp WPAK 1.5mΩtyp SOP-8 2.6mΩtyp Saving Energy High Efficiency (Compare with previous)

MOSFET: Questions for the Customer – “JET” Series Our “Sweet Spot” for LV is 30V Many opportunities can be covered with “JET” series High D-in success rate in US Market Use the Q&A from the RSSI Site “Rep Sales Guide” With our vast lineup of LV and MV MOSFETs, IGBTs, and Triacs, we have a “fit” for just about any application. For assistance, please contact the appropriate team member at HQ.

MOSFET: Figure of Merit Improvements ● Figure of Merit : FOM(Ron･Qg) at Vgs=4.5V　　 100 ) Speed Series 97mΩnC nC RENESAS JET ‘07 ( RENESAS Speed ‘05 Qg 50 RENESAS 8th Gen. 20% Down Low Charge Loss JET Series 78mΩnC Total Gate Charge 20 High Efficiency 10 1 2 5 10 RDS(on)(VGS=4.5V) typ ( m Ω ) Low Conduction Loss

MOSFET: New “BEAM” Series Target Application < Test Conditions > 　Vin=12V, Vout=1.2V, VDR=5V，fsw=350kHz, L=0.45uH, No Air flow Server(CPU,Memory) DT/NB-PC(CPU,Memory) Graphic Card(GPU) BEAM 1H/1L Features Hi : RJK0305DPB (common) Lo : RJK03C0DPA (BEAM) Lo : RJK0346DPA (JET) 1% Up High Efficiency JET Low thermal concern Long battery life Low noise Reducing EMI noise BEAM+SBD Space saving BEAM small PKG (3mmx3mm)

Nch 30V Low Side MOSFET MOSFET: Rds(on) Trend RDS(on)typ [mΩ] Vgs=4.5V 8th Gen. Nch 30V Low Side MOSFET 3.5 HAT2165H Speed 3.4mΩ 3.0 Low Crss/Ciss (0.073) RJK0301DPB 3.0mΩ Low Crss/Ciss (0.044) 2.5 10th JET 2.0 RJK0346DPA 11th BEAM RDS(on)typ [mΩ]　Vgs=4.5V 1.9mΩ RJK03C0DPA Next Gen. Low Qg/Qgd 1.5 1.7mΩ Under Study 1.0 0.5 2002 2004 2006 2008 2010 2012 2014 Year

DrMOS

DrMOS and POL-SiP: Products, Packaging, Applications MOSFET IC D8 (20V) IP65 (16V) Wire bonding, PB free 2004 2005 2006 2007 2008 2009 2010 JET (30V) IP75 (27V) Clip bonding, Terminal Pb free, Halogen free Notebook PCs V-core & non V-core Server & Desktop PCs non V-core (VTT, DDR, etc…) Server & Desktop PCs V-core 6x6mm PKG For VR12/IMVP7 1st Gen. PKG (Wire Bonding) 2nd Gen. PKG (Clip Bonding) 8x8mm PKG POL-SiP: Control IC & MOSFETs DrMOS: Driver IC & MOSFETs POL all in one Device Package R2J20701 <Target Application> R2J20751 R2J2070x R2J2060x mass production Under developing Under studying <Technology> <Products> The World’s first DrMOS in 2004 R2J20601 R2J20602 R2J20702 Higher Performance Light & Heavy Load Efficiency up R2J20605A R2J20604 Light &Heavy Load VCIN=12V Intel Rev3.0/ High Voltage Smaller R2J2065x R2J20653A R2J20652A Intel Rev3.0 R2J20651A R2J20651 PWM=5V UP Wide Input Range BEAM (30V)

Target Application Features Functions DrMOS: R2J20605ANP 8x8 Package New QFN56 3-Chip in One Package Features Driver IC + Top MOS + Bottom MOS Huge output current 50% smaller than discrete solution up to 40A (same as R2J20602NP) Top MOSFET 8 x 8 x 0.8mm QFN 56pin Target Application Telecom/Server Storage/Graphic Card Multi-Phase DC-DC converter Remote ON/OFF Built-in SBD for boot-strapping Functions Driver PWM Controller (Multi-phase) Multi-Phase Bottom MOSFET with SBD Gate Driver Pin Compatible (DrMOS spec.) Capable of 5V PWM Signal

DrMOS: R2J20651NP/ANP 6x6 Package

IGBT (Insulated Gate Bipolar Transistor)

IGBT: Definition What is an IGBT? Insulated Gate Bipolar Transistor Isolated FET and a Bipolar Power Transistor in a single device Noted for high efficiency and fast switching Apps include inverters for various apps, large appliances, electric cars, AC systems, PDP Interest building for US-based designs Induction Heating(IH) Cooktops Motor Control for Major Home Appliances Large Industrial Power Supplies

IGBT: Applications and Product Strengths High efficiency High capability (Short circuit time) High reliability ・High current 　 Low Vce(sat) Low VF ・High speed switching ・Built-in FRD ・Small PKG (TO-220Full Mold 　　LDPAK,MP-3A) Miniaturization Renesas develops the best product by the application !

IGBT: Development Roadmap Trench technology Thin wafer Next-Gen 30V Optimum design of cell structure. 11th Gen. Reverse conducting 600V/1200V G6H-RC Trench technology 1,100-1,200V G5H 600V G6H VGE=30V VGE=30V High Short Circuit Capability Type : RJH60DXX Series High performance & High efficiency G4S Trench technology High speed G5 Optimum Design for Specific Applications 600V Planar construction High Speed &Low Vce (sat) Type : RJH60FXX Series G4 600V/1200V 2005 2006 2007 2008 2009 2010 2011 2012

IGBT: New G6H Series vs G5 Series Tc = 25 ℃ VGE = 15 V GN6060V5DP (60A/600V) (G5 series) Improvement 30% Collector current IC [A] RJH60F5DPK (80A/600V) (G6H series)

IGBT: Renesas vs The Competition G6H series Company A Company B Company C Company D

IGBT: Features and Applications by Product Type G6H Ultra Low VCE(sat) Series 600V IGBT Features Ultra Low Collector to Emitter Saturation Voltage Built-in Fast Recovery Diode (FRD) in Single Package High-Speed Switching Applications Induction Heating (IH) Cooktop Current Resonance, Half Bridge Soft Switching Applications New Products

IGBT: Features and Applications by Product Type <<Will move to Appendix>> G6H Reverse-Conducting 1,000-1200V IGBT Features Single-chip IGBT with Integrated Diode Low Collector to Emitter Saturation Voltage High-Speed Switching Applications Single Transistor Type Voltage Resonance Circuit Induction Heating (IH) Cooktop Soft Switching Applications New Products (Target Spec) Under development

IGBT: Questions for the Customer Applications Induction Heating, i.e Cooktop What type of circuit? Current resonant or voltage resonant? What is the load capacity (kW)? What is the operating current? What is the switching frequency? What package is required? What is the competitive parts and price (from customer)? Others What is the AC input voltage? Is a Fast Recovery Diode (FRD) required? Is short circuit capability required?

Diode

Diode: W/W Market Share and Product Breakdown

Diode: Shipments by Application VC. BSW PIN TV tuner FEM, ASM

Diode: Product Lineup by Device Type Switching (SW) Zener (ZN) Schottky (SB) Varicap (VC) Band SW (BSW) PIN (PIN) Small signal rectification Constant voltage ESD protection Detector Current Stopper TV tuner, AFC, VCO RF SW Diode ANT-SW General Purpose Small signal PW (over Io=0.5A) High Frequency (under Io=0.5A) Rectifier

Diode: Products and Applications  Zener Zener Diodes for Surge Absorption High ESD Level (25-30kV) Type Protection at interface section of an electronic device For use at DC in location of Mobile Phones and other Portables High Speed Signal (~10kV), Low Capacitance Type Host PC and Peripherals, ex. USB 2.0 Lineup Capacitance (pF) 10 20 30 1 100 ESD Tolerance (kV) HZM27FA HZM6.8ZMFA RKZ6.8ZMFAKT HZM6.8MFA RKZ6.2KL RKZ6.8TKK (bi-directional) Low capacitance Series High ESD level Series HZL6.8Z4 HZD6.2Z4 HZM6.8Z4MWA RKZ6.2Z4MFAKT HZM6.8Z4MFA HZM6.2ZMWA/FA HZM5.6ZFA

Diode: Market Needs, Future Activity  Zener Compliance with Directives on EMC (Electromagnetic Compatibility) Small Distortion on Wave-Form in High-Speed Signal Lines (USB, etc) Small and Thin Package for High-Density Surface-Mount Environmentally-Friendly Products Future Activity High ESD (Electrostatic Discharge) Level Based on IEC61000-4-2 Low Capacitance Compound and Small Products (four devices/package, two devices/package) VSON-5 (four devices) Support for Lead-Free and Halogen-Free Products

Diode: Application Examples and Packaging  Schottky Schottky Diodes for Circuit Protection High-Intensity LED LED and LCD Drivers CAN and LIN Bus (Bi-Directional Type)  Automotive Battery for Mobile Equipment Small/Ultra-Small Packaging Bare Die also available for integration into products like LED Modules

Diode: Market Needs and Future Activity  Schottky High Efficiency/Low Loss Small Distortion for High-Frequency Signals Wide Variation of Forward Current Small and light-weight products Environmentally-Friendly Products Future Activity Low Forward-Voltage Drop Low Leakage Current Low Capacitance Wide Lineups of Products Small and Compound Products Support for Lead-Free and Halogen-Free Products

Thank You