MICROWAVE SOLID STATE DEVICES IMPATT DIODE By; Fazrul Faiz Zakaria Nur Aishah Mohd Taib Rosnaiza Hasan Aiza Mahyuni Mozi.

Slides:



Advertisements
Similar presentations
MICROWAVE FET Microwave FET : operates in the microwave frequencies
Advertisements

Proposed by Read in Negative resistance is achieved by creating a delay (180 0 Phase shift) between the voltage and current. Delay is achieved by,
Lecture 14 OUTLINE pn Junction Diodes (cont’d)
Electronic Devices Ninth Edition Floyd Chapter 11.
Principles of Electronic Communication Systems
Subject Code : _______________. Name Of Subject : BASIC ELECTRONIC_____________ Name of Unit : __DIODE AND ITS APPLICATIONS_______ Topic : __P-N.
1 SEMICONDUCTORS Tunnel an Varactor Diodes. 2 SEMICONDUCTORS PN diodes and zener diodes have lightly doped PN junctions and similar V-I characteristics.
Department of Aeronautics and Astronautics NCKU Nano and MEMS Technology LAB. 1 Chapter IV June 14, 2015June 14, 2015June 14, 2015 P-n Junction.
Course Outline 1. Chapter 1: Signals and Amplifiers
Spring 2007EE130 Lecture 17, Slide 1 Lecture #17 OUTLINE pn junctions (cont’d) – Reverse bias current – Reverse-bias breakdown Reading: Chapter 6.2.
Principles of Electronic Communication Systems
Chapter 6 FM Circuits.
OSCILLATORS.
MICROWAVE SOLID STATE DEVICES FARIHA AB. HAMED MARZADILAHIKMAH MOHAMAD NOR SAEMI WAN NADIRAH ROSLI
BASIC ELECTRONICS.
By Squadron Leader Zahid Mir CS&IT Department , Superior University
Recall-Lecture 5 DC Analysis Representation of diode into three models
DC Analysis Representation of diode into three models Ideal case – model 1 with V  = 0 Piecewise linear model 2 with V  has a given value Piecewise linear.
Lecture 2: Semiconductor Diodes
Oscillators 1 मंगलवार, 18 अगस्त 2015 मंगलवार, 18 अगस्त 2015 मंगलवार, 18 अगस्त 2015 मंगलवार, 18 अगस्त 2015 मंगलवार, 18 अगस्त 2015 मंगलवार, 18 अगस्त 2015.
TRANSISTOR Transistor is a semiconductor device made of a solid piece of semiconductor material,with atleast three terminals for connection to an external.
Microwave Engineering/Active Microwave Devices 9-13 September Semiconductor Microwave Devices Major Applications Substrate Material Frequency Limitation.
MICROWAVE DEVICE MICROWAVE SOURCE.
Negative resistance  Negative resistance is a property of some electric circuits where an increase in the current entering a port results in a decreased.
Alternating Current Circuits
9/27/2004EE 42 fall 2004 lecture 121 Lecture #12 Circuit models for Diodes, Power supplies Reading: Malvino chapter 3, Next: 4.10, 5.1, 5.8 Then.
Example 5-3 Find an expression for the electron current in the n-type material of a forward-biased p-n junction.
Principles & Applications
1 Semiconductor Detectors  It may be that when this class is taught 10 years on, we may only study semiconductor detectors  In general, silicon provides.
UNIT-1 Rectifiers & Power Supplies. Rectifier A rectifier is an electrical device that converts alternating current (AC), which periodically reverses.
Diodes and Diode Circuits
SEMICONDUCTOR DEVICES. Diodes as a semiconductor devices Symbol and Structure Diodes is made by joining p-types and n- types semiconductor materials.
NDR & The Gunn Effect. For direct bandgap materials, like GaAs: v d vs. E peaks before saturation & decreases again, after which it finally saturates.
Avalanche Transit Time Devices
Chapter 23 Alternating Current Circuits Capacitors and Capacitive Reactance The resistance in a purely resistive circuit has the same value at all.
Diode: Application Half-Wave Rectifier
Introduction Trapped Plasma Avalanche Triggered Transit mode Prager
McGraw-Hill © 2008 The McGraw-Hill Companies, Inc. All rights reserved. Principles of Electronic Communication Systems FM Circuits.
Solid State Microwave Oscillators Convert dc energy to microwave signals Can be used as generators in all communication systems, radars, electronic counter.
Instrumentation & Power Electronics
1 Microwave Semiconductor Devices Major Applications Substrate Material Frequency Limitation Device Transmitters AmplifiersSi, GaAs, InP< 300 GHzIMPATT.
CHAPTER 8: MICROWAVE DIODES, QUANTUM EFFECT CHAPTER 8: MICROWAVE DIODES, QUANTUM EFFECT & HOT ELECTRON DEVICES Part 1.
DC Analysis Representation of diode into three models Ideal case – model 1 with V  = 0 Piecewise linear model 2 with V  has a given value Piecewise linear.
Schottky Barrier Diode One semiconductor region of the pn junction diode can be replaced by a non-ohmic rectifying metal contact.A Schottky.
Some Microwave Devices Impatt Diodes PIN Diodes Varactor Diodes YIG Devices (Yttrium-Iron Garnet) Dielectric Resonators BIPOLAR TRANSISTORS GaAsFETs HEMT.
Best 3 Applications Involving in Zener Diode Working Functionality.
मंगलवार, 14 जून 2016 मंगलवार, 14 जून 2016 मंगलवार, 14 जून 2016 मंगलवार, 14 जून 2016 मंगलवार, 14 जून 2016 मंगलवार, 14 जून 2016 मंगलवार, 14 जून 2016 मंगलवार,
Transferred Electron Devices
Alternating Current Circuits
Recall-Lecture 5 DC Analysis Representation of diode into three models
Other Transistor Topologies
Semiconductor Diode.
VARACTOR DIODE CORPORATE INSTITUTE OF SCIENCE & TECHNOLOGY , BHOPAL
Recall-Lecture 5 DC Analysis Representation of diode into three models
WAVEGUIDE COMPONENTS BY: P. Vijaya & M. Niraja.
Recall-Lecture 5 DC Analysis Representation of diode into three models
POWER AMPLIFIERS.
BASIC ELECTRONICS.
Amplifiers Classes Electronics-II
Amplifiers Classes Electronics-II
Alternating Current Circuits
Recall-Lecture 5 DC Analysis Representation of diode into three models
Semiconductor Detectors
ELECTRONICS II 3rd SEMESTER ELECTRICAL
Recall-Lecture 6 Diode AC equivalent circuit – small signal analysis
Other Transistor Topologies
Alternating Current Circuits
PN-JUNCTION.
Alternating Current Circuits
Other Transistor Topologies
Presentation transcript:

MICROWAVE SOLID STATE DEVICES IMPATT DIODE By; Fazrul Faiz Zakaria Nur Aishah Mohd Taib Rosnaiza Hasan Aiza Mahyuni Mozi

IMPATT DIODE A wide variety of solid state diodes and transistor have been developed for microwave use. IMPact ionization Avalanche Transit-Time Function as microwave oscillator. Used to produce carrier signal for microwave transmission system. IMPATT can operate from a few GHz to a few hundred GHz

IMPATT DIODE Operation Figure 1: Impatt Diode Operation The diode is operated in reverse bias near breakdown, and both the N and N- regions are completely depleted Because of the difference in doping between the "drift region" and "avalanche region", the electric field is highly peaked in the avalanche region and nearly flat in drift region. In operation, avalanche breakdown occurs at the point of highest electric field, and this generates a large number of hole-electron pairs by impact ionization. The holes are swept into the cathode, but the electrons travel across the drift region toward anode.

IMPATT DIODE Operation Figure 2: The Build Up Of Microwave Oscillation.

IMPATT DIODE Operation As they drift, they induce image charges on the anode, giving rise to a displacement current in the external circuit that is 180° out of phase with the nearly sinusoidal voltage waveform Figure 2 shows the buildup of microwave oscillations in the diode current and voltage when the diode is embedded in a resonant cavity and biased at breakdown

Figure 3: Close Up Current And Voltage. IMPATT DIODE Operation

Figure 3 shows a close-up of the current and voltage waveforms after oscillations have stabilized. It is clear from Fig. 3 that the current is 180° out of phase with the voltage This represents a NEGATIVE AC RESISTANCE

Diode Mounting Procedure and Precautions The IMPATT diode has a negative resistance from DC through microwave frequencies. Consequently, it is prone to oscillate at low frequencies, with the lead inductance from bias circuit connections. The voltage due to bias circuit oscillations may be large enough to burn the device out if adequate precautions are not observed. It is prudent practice to suppress the bias circuit oscillation.

Diode Mounting Procedure and Precautions Adequate heatsink must be provided for the diode to operate properly. These IMPATT diodes have been designed to operate in the precollection mode. As the diode is tuned up from a low operating current from a constant current source, it will be noticed that at the onset of precollection mode, the diode voltage falls down..

Diode Mounting Procedure and Precautions The power output will increase by several dBs. with a slight shift in the operating frequency. When the circuit is detuned in such a fashion that the diode falls out of the precollection mode, the diode voltage will increase. The power dissipation will increase as the power output falls down. If the diode is not adequately heatsink, the diode may burn out

IMPATT DIODE Applications A main advantage is their high power capability. These diodes are used in a variety of applications from low power radar systems to alarms. Nevertheless these diodes make excellent microwave generators for many applications. An alternating signal is generated simply by applying a DC supply when a suitable tuned circuit is applied. The output is reliable and relatively high when compared to other forms of diode.

IMPATT DIODE Applications In view of its high levels of phase noise it is used in transmitters more frequently than as a local oscillator in receivers where the phase noise performance is generally more important.

IMPATT DIODE Applications The following products are available as examples of IMPATT diodes application: 1) Cavity Stabilized IMPATT diode Oscillators CIDO series. 2) Pulsed IMPATT Power Sources IPSP series. 3) IMPATT Active Frequency Multipliers IAFM series. 4) Pulsed and CW IMPATT Injection-Locked Amplifiers IILAP and IILA series. 5) Voltage Controlled IMPATT Oscillators VCIO series.

THANK YOU..