Charge Coupled Device (CCD) Ingle and Crouch, Spectrochemical Analysis www.piacton.com
CCD Architecture Image Area SiO2 backing Pixel Array serial register amplifier http://micro.magnet.fsu.edu/primer/digitalimaging/concepts/ccdanatomy.html and Bryce Marquis (Haynes Lab)
Bryce Marquis (Haynes Lab) CCD Architecture “Channel Stops” form horizontal pixel boundaries Top View 3 electrodes form vertical pixel boundaries One pixel Electrode Insulating oxide n-type silicon p-type silicon Cross section Bryce Marquis (Haynes Lab)
Charge Generation/Collection -V +V -V -V +V -V N-type P-type Incident photons excite electron-hole pairs, electrons gather in potential wells in each pixel
CCD Rain Bucket Analogy 1. Generation 2. Collection 3. Transfer 4. Measurement Shinya Inoue and Kenneth Spring, Video Microscopy, Plenum Press, New York, 1997.
Charge Generation/Collection -V +V -V -V +V -V N-type silica is doped with pentavalent species = excess electrons P-type is doped with trivalent species = excess holes N-type Potential Well P-type One Pixel
Charge Transfer Every third electrode is 2 coupled, charge packets are walked towards Serial registry 2 +5V 0V -5V 1 +5V 0V -5V 3 to serial registry 1 2 3 Time-slice shown in diagram http://spiff.rit.edu/classes/phys445/lectures/ccd1/ccd1.html
+5V 0V -5V 2 +5V 0V -5V 1 +5V 0V -5V 3 1 2 3 http://spiff.rit.edu/classes/phys445/lectures/ccd1/ccd1.html
+5V 0V -5V 2 +5V 0V -5V 1 +5V 0V -5V 3 1 2 3 http://spiff.rit.edu/classes/phys445/lectures/ccd1/ccd1.html
+5V 0V -5V 2 +5V 0V -5V 1 +5V 0V -5V 3 1 2 3 http://spiff.rit.edu/classes/phys445/lectures/ccd1/ccd1.html
+5V 0V -5V 2 +5V 0V -5V 1 +5V 0V -5V 3 1 2 3 http://spiff.rit.edu/classes/phys445/lectures/ccd1/ccd1.html
+5V 0V -5V 2 +5V 0V -5V 1 +5V 0V -5V 3 1 2 3 http://spiff.rit.edu/classes/phys445/lectures/ccd1/ccd1.html
+5V 0V -5V 2 +5V 0V -5V 1 +5V 0V -5V 3 1 2 3 http://spiff.rit.edu/classes/phys445/lectures/ccd1/ccd1.html
Charge Transportation amplifier Pixels at end of the array dump charge into serial register Serial register walks charge packets to amplifier, where it is measured.
Quantum Efficiency www.piacton.com
Noise Sources in CCD Shot Noise Dark Signal Noise Readout Noise Statistical variation of signal over time Increases with the square of the intensity Dark Signal Noise Caused by thermal liberation of electrons Strongly coupled to temperature Readout Noise Summation of noise associated with amplification of signal, and conversion from analogue to digital Increases with the processing speed
Other Issues: Bad Pixels Increasing hot pixels Hot Pixels Increased charge accumulation due to variations in chip surface. Dead Pixels Defective pixels that do not respond.
Other Issues: Blooming
Other Issues: Cosmic Rays Noise From Outer Space!!! * indicates cosmic rays
Other Issues: Etaloning www.piacton.com
Other Features: Binning On Chip Pixel Binning Increases S/N Shot noise decrease Increased speed Less storage space needed Decreases resolution http://micro.magnet.fsu.edu/primer/digitalimaging/concepts/binning.html
Are you getting the concept? List the advantages and disadvantages of using each of the discussed detectors to achieve single molecule detection.