1 Thermal Modeling Syracuse University HEP Group Brian Maynard Steven Blusk

2 Material Constants Material Thermal Conductivity Thermal Conductivity (W/m*K) (W/m*K) Substrate (Diamond) (TPG) (TPG)2000 x,z: 2000 y: 10 Glue1 HDI (Kapton) RO Chip (Silicon) 150 Silicon Detector 150 *INSERT INFO ON HDI

3 Assumptions Cross-sectional modeling of detector Applied 0.5W/cm 2 heat generation on read out chips by taking into account the 3D geometry Also applied heat generation function on the silicon sensors (not annealed, 900V, I/area = 135 uA/cm 2 at 1x10 6 n eq /cm 2 ) Held end of substrate at T=-25 C 2

4 Sensor35mm RO Chip35mm HDI39mm Glue39mm Substrate40mm Aspect Ratio 1: Thickness (mm)

5 Diamond or TPG?

6 Model Setup Applied heat generation on A4 Held A12 at -25C Initial Condition Temp: -25C

7 Aspect Ratio 1:10 Diamond Thickness 0.5mm

8 TPG Thickness 0.5mm

9 TPG Thickness 1 mm

10 TPG Thickness 5 mm

11 TPG Thickness 10mm

12 Diamond Thickness 10mm

13 Due to the substrate being thin (Y direction), TPG and Diamond show comparable results.

14 HDI Studies

15

16 Substrate Thickness *

17 Future Closing in on geometry and materials to use Closing in on geometry and materials to use Comparison of annealed v. non annealed silicon Comparison of annealed v. non annealed silicon 3D model 3D model