Surface Passivation of Crystalline Silicon Solar Cells: A Review Armin G. Aberle Progress in Photovoltaics: Research and Application 8,473-487,2000.

Slides:

Advertisements

Similar presentations

6.4.3 Effect of real surfaces Departure from the ideal case is due to Work function difference between the doped polysilicon gate and substrate The inevitably.

Advertisements

Applications of Photovoltaic Technologies. 2 Solar cell structure How a solar cell should look like ?  It depends on the function it should perform,

Chapter 7b Fabrication of Solar Cell. Different kind of methods for growth of silicon crystal.

Optoelectronic Devices (brief introduction)

Integrated Circuit Devices

Cell and module construction. Photovoltaic effect and basic solar cell parameters To obtain a potential difference that may be used as a source of electrical.

Smart Grid Management CLIL4U LLP DK-KA2-KA2MP 1.

Spring 2007EE130 Lecture 29, Slide 1 Lecture #29 ANNOUNCEMENTS Reminder: Quiz #4 on Wednesday 4/4 No Office Hour or Coffee Hour on Wednesday Tsu-Jae will.

Lecture #6 OUTLINE Carrier scattering mechanisms Drift current

Monocrystalline Silicon Solar Cells June 10, 2015 Chapter VII.

Solar Cell Operation Key aim is to generate power by:

EE580 – Solar Cells Todd J. Kaiser

Spring 2007EE130 Lecture 34, Slide 1 Lecture #34 OUTLINE The MOS Capacitor: MOS non-idealities (cont.) V T adjustment Reading: Chapter 18.3.

Applications of Photovoltaic Technologies

A-Si:H application to Solar Cells Jonathon Mitchell Semiconductors and Solar Cells.

Section 12: Intro to Devices

Silicon Computer Chips Review Band Theory Expand to Conductors/ Semiconductors/ Insulators Intrinsic vs. Doped Semiconductors n-type and p-type Semiconductors.

Applications of Photovoltaic Technologies Referenced website:

P and n type semiconductors. Semiconductors Semiconductors are also referred to as metalloids. Metalloids occur at the division between metals and non-metals.

Advanced Higher Chemistry

Chapter 8 Thin Film Solar Cells July 12, 2015.

EE580 – Solar Cells Todd J. Kaiser Lecture 05 P-N Junction 1Montana State University: Solar Cells Lecture 5: P-N Junction.

Chapter V July 15, 2015 Junctions of Photovoltaics.

Unit-II Physics of Semiconductor Devices. Formation of PN Junction and working of PN junction. Energy Diagram of PN Diode, I-V Characteristics of PN Junction,

Lecture 3. Intrinsic Semiconductor When a bond breaks, an electron and a hole are produced: n 0 = p 0 (electron & hole concentration) Also:n 0 p 0 = n.

Techniques for achieving >20% conversion efficiency Si-based solar cells Presenter: TSUI, Kwong Hoi.

CONCEPTUAL COMPARISON BETWEEN LHC SILICON DETECTORS AND SILICON SOLAR CELLS Dr. Adnan Ali Department of Physics Government College University Faisalabad.

EE415 VLSI Design The Devices: Diode [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

The Devices: Diode.

Depletion Region ECE Depletion Region As electrons diffuse from the n region into the p region and holes diffuse from the p region into the n region,

1 Solar Cell Fundamentals SJSU Short Course D. W. Parent.

Fraunhofer Technology Center Semiconductor Materials Institute for Experimental Physics TU Bergakademie Freiberg Industrial aspects of silicon material.

ISAT 436 Micro-/Nanofabrication and Applications Photovoltaic Cells David J. Lawrence Spring 2004.

Kristin Ackerson, Virginia Tech EE Spring The diode is the simplest and most fundamental nonlinear circuit element. Just like resistor, it has.

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes APPLIED PHYSICS LETTERS 101, (2012)

The Science of Solar Cells May 15, Announcements.

EE 5340 Semiconductor Device Theory Lecture 13 – Spring 2011 Professor Ronald L. Carter

P-N Junction Diode Topics covered in this presentation:

University of California Santa Barbara Yingda Dong Characterization of Contact Resistivity on InAs/GaSb Interface Y. Dong, D. Scott, A.C. Gossard and M.J.

Fundamental concepts of integrated-circuit technology M. Rudan University of Bologna.

Solar panels A solar panel is made up of photovoltaic cells. A photovoltaic cell converts light energy into electricity. A conductor is something that.

Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – Poly-Si gate depletion effect – V T adjustment Reading: Pierret ; Hu.

EE130/230A Discussion 3 Peng Zheng.

ELECTRONIC PROPERTIES OF MATTER - Semi-conductors and the p-n junction -

1 Detectors RIT Course Number Lecture N: Lecture Title.

Lecture 18 OUTLINE The MOS Capacitor (cont’d) – Effect of oxide charges – V T adjustment – Poly-Si gate depletion effect Reading: Pierret ; Hu.

Conductors – many electrons free to move

Physics of Semiconductor Devices

Solar cell structures: Reviewing and classifying the various design possibilities Wrap-up from “cell structures” discussion Progress meeting 12 April 2013.

NEEP 541 Ionization in Semiconductors Fall 2002 Jake Blanchard.

Many solids conduct electricity

Electronics 1. The Bohr atom The nucleus is positively charged and has the protons and neutrons. The atomic number is the number of protons and determines.

By Squadron Leader Zahid Mir CS&IT Department, Superior University PHY-BE -04 PN Junction.

Part V. Solar Cells Introduction Basic Operation Mechanism

1 Semiconductor Devices  Metal-semiconductor junction  Rectifier (Schottky contact or Schottky barrier)  Ohmic contact  p – n rectifier  Zener diode.

Photovoltaic effect and cell principles. 1. Light absorption in materials and excess carrier generation Photon energy h = hc/ (h is the Planck constant)

المــــركــز الوطنــــــي لبحــــــوث الطـــاقــــــة National Energy Research Center Introduction to Photovoltaic (PV) Technology Sponsored by.

We report, a simplified method for passivation of emitter surface of polycrystalline silicon solar cells at room temperature. The Olelyamine is used as.

14-Photovoltaics Part 1 EE570 Energy Utilization & Conservation Professor Henry Louie.

Collaboration with Vietnam in development of technologies for low-cost solar cells Ph.D. Quang Nguyen Senior researcher – Norut Narvik.

P – n junction Prof.Dr.Beşire GÖNÜL.  the basic element of all bipolar devices. >photodiode, light sensitive diode, >LED- ligth emitting diode, >laser.

Bandgap (eV) Lattice Constant (Å) Wavelength ( ㎛ ) GaN AlN InN 6H-SiC ZnO AlP GaP AlAs.

Multiple choise questions related to lecture PV2

Basic Planar Processes

Comparison and characterization of different tunnel layers, suitable for passivated contact formation Gordon LING(1), Zheng XIN(1), Cangming KE(1), Kitz.

결정질 실리콘 태양전지의 기술과제 울산대학교 공과대학 첨단소재공학부 교수 천 희 곤

Empowering Photovoltaics

Mitsuru Imaizumi Space Solar Cells -- II -- SLATS

Presentation transcript:

Surface Passivation of Crystalline Silicon Solar Cells: A Review Armin G. Aberle Progress in Photovoltaics: Research and Application 8, ,2000.

2010/8/27 2/5 NCTU IEO GPL Outline  Introduction  Fundamental physics  Surface passivation method  Surface passivation of c-Si solar cells

2010/8/27 3/5 NCTU IEO GPL Introduction  Defects Extrinsic (Processing related) Intrinsic (Si related, unavoidable)  Dangling bond Growth condition Dislocation

2010/8/27 4/5 NCTU IEO GPL Surface type in Si solar cell  Metalized Finger and bus bar Very high surface recombination Avoid recombination loss  Non-metalized Illuminated region Well passivated and good blue response Avoid highly doped  Back electrode high surface recombination Avoid recombination loss

2010/8/27 5/5 NCTU IEO GPL Surface recombination  Shockley-Read-Hall (SRH) theory  Low recombination rate strategy 1. low surface state N st 2. low carrier concentration n s, p s EtEt EcEc EvEv Surface Recombination rate:

2010/8/27 6/5 NCTU IEO GPL Reduction of the surface states  Growth/deposition of a dielectric film SiO 2 Al 2 O 3 SiN x Antireflective coating layer  Chemical methods HF immersion Alcoholic solution Si solar cell Dielectric layer(d)

2010/8/27 7/5 NCTU IEO GPL Field-effect passivated  High-low junction p + -p n + -n Back surface field (BSF) Front surface field (FSF)  p-n junction MIS Selective emitter HIT(a-Si)

2010/8/27 8/5 NCTU IEO GPL Combined passivaction

2010/8/27 9/5 NCTU IEO GPL Concept  The fixed charge induced the negative charge on the surface, bending the band diagram.  Al 2 O 3 is suitable to p-type Si substrate. Al 2 O e-e- h+

2010/8/27 10/5 NCTU IEO GPL PERL solar cells  Passivated Emitter and Rear Locally Diffused Solar Cell (24.7%)

2010/8/27 11/5 NCTU IEO GPL Band offset measurement  The Si substrate can passivated by dielectric film and electric field effect method.  The Al 2 O 3 is suitable for p-type Si substrate passivation, and the SiN x is suitable for n-type Si substrate passivation.

Thanks for your attention!!