06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 1 N e v e r s t o p t h i n k i n g. Secure Mobile Solutions.

Slides:



Advertisements
Similar presentations
SiGe BiCMOS Device Modeling MURTY, SHERIDAN,AHLGREN, HARAMEHicum Users Group Meeting (BCTM2002) 1 Evaluation of HiCUM for Modeling DC, S-parameter and.
Advertisements

PARAMETER ESTIMATION FOR ODES USING A CROSS-ENTROPY APPROACH Wayne Enright Bo Wang University of Toronto.
III-V HBT modeling, scaling and parameter extraction using TRADICA and HICUM Yves Zimmermann, Peter Zampardi, Michael Schroeter.
Transistor Amplifiers
Bipolar Junction Transistor Circuit Analysis
Recall Last Lecture DC Analysis and Load Line
Chapter 4 – Bipolar Junction Transistors (BJTs)
BIJUNCTION TRANSISTOR
Recommended Books Robert Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory”, Prentice Hall, 7th Edition or Latest. Thomas L. Floyd,
ECE 442 Power Electronics1 Bipolar Junction Transistors (BJT) NPNPNP.
CADENCE CONFIDENTIAL Hicum Model in Spectre Diana Moncoqut, R&D manager June 4, 2004.
Announcements Assignment 2 due now Assignment 3 posted, due Thursday Oct 6 th First mid-term Thursday October 27 th.
ECE340 ELECTRONICS I BIPOLAR JUNCTION TRANSISTOR.
Chapter 5 Bipolar Junction Transistors
Chapter 4 Bipolar Junction Transistor
Pnp transistor ECE Electronics - Dr. S. Kozaitis- Florida Institute of Technology – Fall 2002.
Bipolar Junction Transistors EE314. Chapter 13: Bipolar Junction Transistors 1.History of BJT 2.First BJT 3.Basic symbols and features 4.A little bit.
Low T Electronics Class Projects Guofu Niu Alumni Professor Electrical and Computer Engineering Department Auburn University, Auburn AL
Spring 2007EE130 Lecture 23, Slide 1 Lecture #23 QUIZ #3 Results (undergraduate scores only, N = 39) Mean = 22.1; Median = 22; Std. Dev. = High =
Bipolar Junction Transistors (BJT) NPNPNP. BJT Cross-Sections NPN PNP Emitter Collector.
Chapter 4 – Bipolar Junction Transistors (BJTs)
Bipolar Junction Transistor
Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012 COMSATS Institute of Information Technology Virtual campus Islamabad.
Electronic Circuits Laboratory EE462G Lab #8 BJT Common Emitter Amplifier.
EE130/230A Discussion 13 Peng Zheng 1. Why New Transistor Structures? Off-state leakage (I OFF ) must be suppressed as L g is scaled down – allows for.
Transistors They are unidirectional current carrying devices with capability to control the current flowing through them The switch current can be controlled.
ECE 342 – Jose Schutt-Aine 1 ECE 342 Solid-State Devices & Circuits 6. Bipolar Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University.
Chapter 5 BJT Circuits Dr.Debashis De Associate Professor West Bengal University of Technology.
Introduction to Transistors
The Bipolar Junction Transistor (BJT)
Chapter 6: Bipolar Junction Transistors
Self-heating investigation of bulk and SOI transistors
0 Chap. 4 BJT transistors Widely used in amplifier circuits Formed by junction of 3 materials npn or pnp structure.
Introduction to Controlling the Output Power of a Transistor Stage A load network will be designed to maximize the output power obtainable from the Mitsubishi.
Peptidesproteinsgenes protein accessionsharedsharedunique gene nameshareduniqueunique Identified by gene unique peptides Identified by protein and gene.
The Mathematical Model Of Repressilator where i = lacl, tetR, cl and j = cl, lacl, tetR. α 0 : the number of protein copies per cell produced from a given.
BJT Transistors and Characteristics ELEC 121. January 2004ELEC 1212 Introduction to BJT’s BJT Specification Sheets BJT Characteristic Family of Curves.
Delivering Success. Modeling 32 V Asymmetric LDMOS Using Aurora and Hspice Level 66 By Alhan Farhanah, Mohd Shahrul Amran, Albert Victor Kordesch Device.
Commissioning and Operation of the CMS Tracker analogue optical link system at TIF with CMSSW: R.Bainbridge, A.Dos Santos Assis Jesus, K.A.Gill, V. Radicci.
Bipolar Transistors Two PN junctions joined together Two types available – NPN and PNP The regions (from top to bottom) are called the collector (C), the.
Recall Last Lecture Introduction to BJT 3 modes of operation Cut-off Active Saturation Active mode operation of NPN.
Lecture 24 OUTLINE The Bipolar Junction Transistor Introduction BJT Fundamentals Reading: Pierret 10; Hu 8.1.
Semiconductor Device Physics
Modern VLSI Design 3e: Chapter 3 Copyright  1998, 2002 Prentice Hall PTR Topics n Electrical properties of static combinational gates: –transfer characteristics;
BJT Bipolar Junction Transistors (BJT) Presented by D.Satishkumar Asst. Professor, Electrical & Electronics Engineering
(Towards a) Luminosity model for LHC and HL-LHC F. Antoniou, M. Hostettler, Y. Papaphilippou, G. Papotti Acknowledgements: Beam-Beam and Luminosity studies.
ECE 333 Linear Electronics
COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 5.
COURSE NAME: SEMICONDUCTORS Course Code: PHYS 473 Week No. 8.
BJT transistors Summary of DC problem 2 Bias transistors so that they operate in the linear region B-E junction forward biased, C-E junction reversed.
Hirophysics.com The Genetic Algorithm vs. Simulated Annealing Charles Barnes PHY 327.
Chapter 4 – Bipolar Junction Transistors (BJTs) Introduction
ECE 3355 Electronics Lecture Notes Set 6 – Version 8 Bipolar Junction Transistors Dr. Dave Shattuck Dept. of ECE, Univ. of Houston.
ECE 3355 Electronics Lecture Notes Set 6 – Version 8
Chapter 3: Bipolar Junction Transistors
Bipolar Junction Transistor Circuit Analysis
Dept. of ECE, Univ. of Houston
Lecture 4 Bipolar Junction Transistors (BJTs)
Bipolar Junction Transistors (BJT)
Bipolar Junction Diode & DC Mr. Zeeshan Ali, Asst. Professor
Electrical Properties of MPPC/SiPM/GMAPD’s
Graphing Systems of Inequalities.
Recall Lecture 11 DC Analysis and Load Line
Recall Last Lecture Load Line
Bipolar Junction Transistor Circuit Analysis
Recall Last Lecture DC Analysis and Load Line
Introduction to Small Signal Model
Status of HICUM integration in circuit simulators
Review & Problems.
Recall Last Lecture DC Analysis and Load Line
Presentation transcript:

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 1 N e v e r s t o p t h i n k i n g. Secure Mobile Solutions June 15/16, 2004, Bordeaux, France DC Temperature Behavior of Hicum Arasch Lagies (IFX), Jörg Berkner (IFX), Ramana M. Malladi (IBM), Kim M. Newton (IBM), Scott M. Parker (IBM) Temperature Dependent Modeling Problems Reason for the Modeling Problems Solution for the Modeling Problems Results

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 2 DC Measurement Results and Behavior at T=-40°C, 25°C and 125°C Sketch of the Measurement Setup: Common-Emitter + - IbIb V ce c e b I b [uA] = 1, 2, 5, 8, 10, 15, 20 V ce = 0V to 3V Results: –Slope of saturation region rises with decreasing T. –Active region current rises with decreasing T. Measurements at T=-40°C (blue), 25°C (black), 125°C(red) T↓T↓ T↓T↓

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 3 DC Simulation Results with Hicum in Spectre at T=-40°C, 25°C and 125°C Sketch of the Simulation Setup: Common-Emitter + - IbIb V ce c e b I b [uA] = 1, 2, 5, 8, 10, 15, 20 V ce = 0V to 3V Results: –The saturation region is shifted to higher V CE for T < 0°C. –The active region current rises with decreasing T. Simulations at T=-40°C (blue), 25°C (black), 125°C(red)

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 4 Reverse Gummel Measurements at T=-40°C, 25°C and 125°C In reverse Gummel I S cannot be fitted for all temperatures. Measurements show: I c, I e, I b and I s are all T-dependent. This is true for reverse Gummel and in forward active mode. How can the I s temperature dependence be fitted? Measurements at T=-40°C (blue), 25°C (black), 125°C(red) T↑T↑

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 5 Reason for Fitting Difficulties The saturation current of the parasitic pnp substrate transistor ITSS is temperature-independent modeled. If ITSS is fitted for T=25°C the current through the pnp substrate transistor becomes too big for T < 0°C, compared to the base current of the npn transistor. This leads to 1.The shift for the DC output curves for T< 0°C toward higher V CE. 2.Bad fitting of I S in the reverse Gummel and in forward active mode over temperature. 3.Bad convergence behavior for T< 0°C.

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 6 Solution for the Fitting Difficulties (1) For good results ITSS shows an exponential behavior with the temperature. By using a similar function as used for the saturation current of the parasitic pnp transistor, ISP(T) in Vbic, this problem can be solved. Here is

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 7 Solution for the Fitting Difficulties (2) ITSS‘(nom) [A]=6.67E-10 XIS=3 EAP [eV]=1.1 k [JK -1 ] =1.38E-23 q [C]=1.60E-19 NFP=0.87 The exponential function for ITSS(T) leads to optimal agreement with measurements (ITSS ’ = ITSS/area): Fitted ITSS’ values from measurements compared to the ITSS’(T) function

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 8 Solution for the Fitting Difficulties (3) Some possibilities for the introduction of ITSS(T): 1.If a scaling file is available ITSS(T) can be implemented there (work around). 2.Generally ITSS(T) should be implemented in the model code.

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 9 Measurement vs. DC Simulation Results with Hicum in Spectre at T=-40°C, 25°C and 125°C using ITSS = ITSS(T) With ITSS=ITSS(T) there is no shift of the saturation region to higher V CE. Meas. (dash-dotted) vs. sim. (solid) at T=-40°C. Meas. (dash-dotted) vs. sim. (solid) at T=25°C. Meas. (dash-dotted) vs. sim. (solid) at T=125°C.

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 10 Measurement vs. Reverse Gummel Results with Hicum in Spectre at T=-40°C, 25°C and 125°C using ITSS = ITSS(T) With ITSS=ITSS(T) the low current region of I S in the reverse Gummel plot can be fitted accurately. Meas. (dash-dotted) vs. sim. (solid) at T=-40°C. Meas. (dash-dotted) vs. sim. (solid) at T=25°C. Meas. (dash-dotted) vs. sim. (solid) at T=125°C.

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 11 Conclusions The temperature independence of ITSS for the parasitic pnp substrate transistor leads for some temperatures to a strong current imbalance compared to the base current of the npn main transistor. This imbalance leads to –a shift of the saturation region in the DC output curves for T < 0°C, –a bad fitting of I S in the reverse Gummel and in forward active mode over T and –difficulties in the simulator convergence for some T. The problem can be solved by using a T-dependent function for ITSS similar to the saturation current ISP(T), as used in Vbic. ITSS(T) can be implemented in a scaling file or better in the model code itself.

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 12 Extra Foil (1) Reverse Gummel Measurement and Simulation with Hicum in Spectre at T=-40°C, 25°C and 125°C In reverse Gummel I S cannot be fitted for all temperatures. Measurements at T=-40°C (blue), 25°C (black), 125°C(red) Simulations at T=-40°C (blue), 25°C (black), 125°C(red)

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 13 Extra Foil (2) I S Reverse Gummel Measurement and Simulation with Hicum in Spectre Measurement and simulation in a technology of Infineon. In reverse Gummel I S cannot be fitted for all temperatures. Here the fitting was done for T=25°C (green). –For T=125°C (blue) the simulation deviates significantly. –For T=-25°C (red) no simulator convergence was achieved. Measurement solid lines, simulation dashed lines. For T = -25°C (red), 25°C (green), 125°C (blue)

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 14 Extra Foil (3) DC Output Characteristics Simulation with Hicum in ADS Here the same parameter set was used as in Spectre. The default parameter set gives similar results. For T < 0°C a shift of the saturation region to higher V ce can be observed. Simulation plot of ADS. For T = -40°C (blue), 25°C (black), 125°C (red). + - IbIb V ce c e b I b [uA] = 1, 2, 5, 8, 10, 15 V ce = 0V to 3V

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 15 Simulation plot of ADS with Ib=10  A. Temperature sweep with T = -40°C to 20°C in steps of 10°C. Extra Foil (4) DC Output Characteristics Simulation with Hicum in ADS Temperature Sweep Here the same parameter set was used as in Spectre.

06/16/2004 Arasch Lagies Jörg Berkner Ramana M. Malladi Kim M. Newton, Scott M. Parker Page 16 Extra Foil (5) Forward Gummel Characteristic Hicum Simulation with ITSS=const., ITSS=ITSS(T), compared with measurements In forward Gummel the change from ITSS=const. to ITSS=ITSS(T) leads to slight changes at T<0°C for higher V BE. This comes closer to the measured values. Simulations and Measurements at T = -40°C (blue), 25°C (black), 125°C (red). Forward Gummel results with ITSS=const. (solid-symbol) and ITSS=ITSS(T). Included measurements (dash-dotted lines).