教授：陳文山 學生：林晏羽 班級：碩研電子一 甲 學號： THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

EVOLUTION OF RFIC HANDSET PAS 2

手機業務增長 / 預計增長 2002 年至 2013 圖 1 。手機手機部門的增長，較去年同期預測全球（百萬）。 3 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Requirements for Power Amplifiers 4 PA 設計使用功率尺寸 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Semiconductor Technologies for RF Integrated Circuit Handset PAs 5 1.III - V 族化合物為基礎的技術和矽為基礎 2. MESFET 3. PHEMT 4. HBT 半導體技術可用於 PA 的應用： 砷化鎵（ GAAS ）優點： 1. 高擊穿電壓 2. 高增益 3. 線性度好 4. 加強 PAE 的高產量 Vcc THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Semiconductor Technologies for RF Integrated Circuit Handset Pas 6 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Handset Power Amplifier Design Methodologies and Architectures Saturated Power Amplifi er Design Methodologies and Architectures Power Amplifier Design Methodology 7 Match COMS Conroller HBT PA HBT PA 圖 2. 方塊圖，四組頻帶 GSM / GPRS 功率放大器。 CMOS 控制器提供直流偏置， 邏輯控制，功率控制的兩條平行異質結雙極晶體管。阻抗匹配電路用於輸入 和輸出的放大器。

Automatic Bas Controller Vcc RFout RFin Vapc 圖 3. 方塊圖三個階段功率放大器。第一階段提供線性增益， 第二階段提供足夠的功率來驅動第三階段為飽和模式操作。 8 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

圖 4. 顯微照片一個四頻的 SiGe HBT 功率放大器。這樣的設計 集成了控制階段和擴增階段在一個芯片上。 9 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Saturated Power Amplifier Design Architectures 10 PA RampPAC Vcc V bat 兩個主要的架構是使用在 GSM 功率放大器，一個是可變增益，另一 種是固定增益架構。在可變增益架構， [ 功率放大器有固定的輸入功 率，通常由一個壓控振盪器（ VCO ），輸出功率為通過改變增益功 率放大器通過偏置控制。 圖 5. 電流控制，可變增益電路。調整後的增益是通過 改變偏壓的感應電流在輸出。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

PA RampPAC Vcc V bat 圖 6 。電壓控制，可變增益電路。集電器的電壓是感覺到的， 以及一系列 FET 的電壓調整設置集電電壓。 11 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Linear Power Amplifier Design and Its Architecture 12 Driver Stage Bias Output Match lnter Stage Match Lnput Match Power Stage Bias Vcc 1 GND Vcc 1 V CONT V REF RF ln RF Ou t Module MMIC DA 圖 7. 簡化的兩階段線性功率放大器 手機框圖。第一階段由一個驅動放 大器（大），其次是功率放大器 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Camier Matching Circuit Load λ µ Transformer Peak 圖 8. 一系列的簡化結構型功率放大器 Doherty 輸出載波信 號分離和通過路徑 1 和路徑 2 ，結合在負載。 13 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Load M ·Z Load M -1 Z Load M ·Z Load Q1Q1 Z o 90 o Q2Q2 （A）（A） 14 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Load M ·Z Load (Open) Z Load M ·Z Load Q1Q1 Z o 90 o Q2Q2 8 2 圖 9. 一種簡化結構的開關 的功率放大器。 （ A ）高功率模式。 （ B ）低功耗模式。 15 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

圖 10 。測量的功率附加效率的系列 型功率放大器（實線）相比，一個典 型的 AB 類功率放大器（虛線）。 圖 11 。測得的功率附加效率（ PAE ）和相鄰 信道功率比（ ACPR ）在 5 MHz 偏移使用寬帶 分碼多工存取計劃（ 3GPP 的 WCDMA 的 rel.99 ）。載波頻率為 836.5MHz 16 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

I/M O/M I/M O/M Additional Matching Point 1 V d2 Q2Q2 V d1 V c1 P in Point 2 Point 1 I d2 Q1Q1 I d1 V c1 SW 2 圖 12. 框圖步階功率放大器。開關是用來改 變功率放大器周邊設備。 I / M ：輸入匹配。 O/M ：輸出匹配 17 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

0 Bias Circuit Second Stage Switch Bias Circuit First Stage Lnput Matching Lnput Matching lnter Stage Matchin lnter Stage Matchin Switch dc Feed dc Feed dc Feed MMIC +45 Phase -45 Phase 0 dc Feed dc Feed dc Feed ldc Feed and Harmonics Tuning -45 Phase +45 Phase 0 0 ldc Feed and Harmonics Tuning 50 Ω Ω 6-10 Ω dc Block RF ln V ctrl Vcc Y1Y1 Y2Y2 Y1Y1 Y2Y2 Y1Y1 Y1Y1 V ctrl 圖 13. 示意圖的開關負載 不敏感的功率放大器。該 裝置周圍是改變部分關閉 輸出單元。 18

S/W CNTL V mode Biss CNTL Biss Circuits Match Circuit Match Circuit V CC1A V CC1B High-Power Amplifier Chain Low-Power Amplifier Chain MMIC ln Match Circuit DA 2 DA 1 PA 2 PA 1 V CC2A V CC2B 圖 15. 示意圖並聯功率放大器 19

圖 14. 測量 ACPRI 和 ACPR2 和 PAE 為低（ LM ） 和高（ hm ）的功率模式在載波頻率為 1880MHz 的步階功率放大器。 圖 16. 測量增益和功率增加為低效率 （ PAE ）和高功率模式在載波頻率為 1880MHz 的電路如圖 15 所示。 20 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Future Handset PAs Multimode and Multiband PAs 21 High Band SPl Low Band DCS/PCS WCDMA HB GSM/EGSM V des 圖 17. 單一路徑，多模功率放大器架構。開關是用來改變不同的解 調器電路 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

Summary 22 由於功率放大器在手機使用手機電池供電操作， 高 PAE 是必不可少的電池壽命。同樣重要的是對熱 管理在手機上。線性是關鍵 3G 的應用或超越。此外， 成本，尺寸和可靠性也非常重要的考慮因素。 III - V 複合技術在今天仍然佔主導地位的手機市場，由於 其優越的性能，如 PAE 的，線性度和耐用性。矽 CMOS 技術是在追趕。進一步的性能改進和更新穎 的設計方法都需要置換優勢的 III - V 族化合物的技術。 矽材料製成的技術提供了很好的解決方案的單芯片 集成。矽的 CMOS 多模 / 多頻段手工訂功率放大器可 提供移動電話製造商以最低成本，最小尺寸，大多 數的功能。巴勒斯坦權力機構最終可能會集成收發 器和基帶芯片，以進一步縮小體積，降低成本。

圖 18.GSM 功率放大器模塊圖 19.WCDMA 功率放大器模塊 23 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE.ISSUE DATE :FEB.2010.VOLUME :11,ISSUE:1.ON PAGE(S):60-69.INSPEC ACCESSION NUMBER: DIGITAL OBJECT IDENTIFIER : /MMM DATE OF CURRENT VERSION :29 一月 2010.SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

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