Explicit Vth Based Compact Model of Independent DG MOSFETs with Short Channel Effects Marina REYBOZ(1), Thierry POIROUX(1), Olivier ROZEAU(1), Patrick.

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Explicit Vth Based Compact Model of Independent DG MOSFETs with Short Channel Effects Marina REYBOZ(1), Thierry POIROUX(1), Olivier ROZEAU(1), Patrick MARTIN(1) & Jalal JOMAAH(2) (1) CEA-LETI, 17 rue des Martyrs, 38 054 Grenoble, France (2) IMEP, 3 Parvis Louis Néel, 38016 Grenoble, France

BASIS OF THE MODEL Qinv = Qinv1 + Qinv2 BASIS BASIC EQUATIONS PHYSICAL Weak inversion Strong inversion i = 1 or 2 i = 1 or 2 We are looking for these equations because we know how to unify them (BSIM3v3) BASIC EQUATIONS PHYSICAL ASSUMPTIONS i = 1 or 2 EXPLANATIONS IN THE POSTER

& Short Channel Effects PHYSICAL ASSUMPTION Superposition Theorem + Developpement in infinite series X. Liang et al., “A 2-D Analytical Solution for SCEs in DG MOSFETs” IEEE Transac. On Electron Devices, vol.51, n°8, 2004. PHYSICAL ASSUMPTION & i = 1 or 2 i = 1 or 2 i = 1 or 2

To physically model SCE in saturation: Results L=30nm & Tsi=10nm Work in progress To physically model SCE in saturation: Velocity saturation Early voltage