by David P. McMeekin, Golnaz Sadoughi, Waqaas Rehman, Giles E

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Presentation transcript:

A mixed-cation lead mixed-halide perovskite absorber for tandem solar cells by David P. McMeekin, Golnaz Sadoughi, Waqaas Rehman, Giles E. Eperon, Michael Saliba, Maximilian T. Hörantner, Amir Haghighirad, Nobuya Sakai, Lars Korte, Bernd Rech, Michael B. Johnston, Laura M. Herz, and Henry J. Snaith Science Volume 351(6269):151-155 January 8, 2016 Copyright © 2016, American Association for the Advancement of Science

Fig. 1 Tuning the band gap. Tuning the band gap. Photographs of perovskite films with Br composition increasing from x = 0 to 1 for (A) FAPb[I(1-x)Brx]3 and (B) FA0.83Cs0.17Pb[I(1-x)Brx]3. (C) Ultraviolet-visible absorbance spectra of films of FAPb[I(1-x)Brx]3 and (D) FA0.83Cs0.17Pb[I(1-x]Brx)3. a.u., arbitrary units. (E) XRD pattern of FAPb[I(1-x)Brx]3 and (F) FA0.83Cs0.17Pb[I(1-x)Brx]3. The stated compositions are the fractional compositions of the ions in the starting solution, and the actual composition of the crystallized films may vary slightly. David P. McMeekin et al. Science 2016;351:151-155 Copyright © 2016, American Association for the Advancement of Science

Fig. 2 Material characteristics of FA0. 83Cs0. 17Pb(I0. 6Br0 Fig. 2 Material characteristics of FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite. Material characteristics of FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite. Normalized PL measurement measured after 0, 5, 15, 30, and 60 min of light exposure of the (A) MAPb(I0.6Br0.4)3 and (B) FA0.83Cs0.17Pb(I0.6Br0.4)3 thin films. (C) Semi-log plot of EQE at the absorption onset for a FA0.83Cs0.17Pb(I0.6Br0.4)3 PV cell, measured using FTPS at short-circuit (JSC). (D) OPTP transients for a FA0.83Cs0.17Pb(I0.6Br0.4)3 thin film, measured after excitation with a 35-fs light pulse of wavelength 400 nm with different fluences. (E) Charge-carrier diffusion length L as a function of charge-carrier concentration. David P. McMeekin et al. Science 2016;351:151-155 Copyright © 2016, American Association for the Advancement of Science

Fig. 3 Device architecture and I-V characteristics for FA0. 83Cs0 Fig. 3 Device architecture and I-V characteristics for FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite and Si PV cells. Device architecture and I-V characteristics for FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite and Si PV cells. (A) Scanning electron microscope image of a cross-section of a planar heterojunction solar cell. PCBM, phenyl-C60-butyric acid methyl ester. (B) Forward bias to short-circuit I-V curve for the best perovskite devices fabricated, using either a Ag metal or semi-transparent ITO top electrode, measured at a 0.38 V/s scan rate. FF, fill factor. We also show the I-V curve of a SHJ cell, measured with direct light or with the simulated sunlight filtered through the semi-transparent perovskite solar cell (37). The SHJ cells were measured at the Centre For Renewable Energy Technologies, Loughborough, UK, under an extremely well-calibrated solar simulator. (C) Photocurrent density and power conversion efficiency measured at the maximum power point for a 30-s time span. (D) EQE spectrum measured in short-circuit (JSC) configuration for the highest-efficiency perovskite cell and the SHJ cell measured with the incident light filtered through the semi-transparent perovskite cell. David P. McMeekin et al. Science 2016;351:151-155 Copyright © 2016, American Association for the Advancement of Science