Fig. 1 Bands and hybridization in graphene-encapsulated WSe2 measured by μ-ARPES. Bands and hybridization in graphene-encapsulated WSe2 measured by μ-ARPES.

Slides:



Advertisements
Similar presentations
Observation of Fermi arc surface states in a topological metal
Advertisements

by Jungwon Park, Hans Elmlund, Peter Ercius, Jong Min Yuk, David T
Fig. 3 Band dispersions along on the KHgSb (010) surface.
Fig. 1 Phonon dispersion along Q = [2 + H, −2 + H, 0] (L = 0 ± 0
Fig. 4 Pupil shape and image quality in the model sheep eye.
Fig. 5 In vivo MIP imaging of lipid and protein in C. elegans.
Fig. 1 Upward emission functions used to compute the maps.
Fig. 1 Sensing scheme with an atomic spin sensor.
Fig. 1 Characterization of the device structure.
Fig. 3 Theoretical analysis of the thermalization pathways.
Fig. 3 Evolution of absorber with annealing.
Structural analysis of graphene-embedded FeN4 (FeN4/GN) catalysts
Fig. 4 First-principles DFT calculations.
Fig. 1 NP-free Ch-CNC droplets.
Fig. 1 Crystal structure and calculated band structure.
Fig. 2 Ferroelectric domains resolved in WTe2 single crystals.
Fig. 2 Fluence-dependent emission characteristics of CH3NH3PbI3 recorded at 15 and 300 K. Fluence-dependent emission characteristics of CH3NH3PbI3 recorded.
Fig. 6 PL study showing the lower energetic states at the layer edges.
Fig. 2 Principle of attenuation-compensation for a Bessel light sheet.
Fig. 2 Materials and designs for bioresorbable PC microcavity-based pressure and temperature sensors. Materials and designs for bioresorbable PC microcavity-based.
Fig. 4 The results of HRTEM and high-angle annular dark-field scanning TEM investigations. The results of HRTEM and high-angle annular dark-field scanning.
by Andreas Keiling, Scott Thaller, John Wygant, and John Dombeck
Fig. 1 Structure of L10-IrMn.
Fig. 5 Recruitment of a downstream polarity complex triggered by the MT arrival. Recruitment of a downstream polarity complex triggered by the MT arrival.
Fig. 1 A monolayer ReSe2 on a back-gated G/h-BN device.
Fig. 4 Resistance oscillations in Nc-G film.
Fig. 2 Pulsed THz imaging. Pulsed THz imaging. (A) Electric field of our THz pulse recorded in the time domain using electro-optic sampling. The arrow.
Fig. 1 Characterization of particles and scaffold.
Fig. 2 Gate and magnetic field dependence of the edge conduction.
Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride by Daowei He, Jingsi Qiao, Linglong Zhang,
Fig. 2 Micro-Raman spectroscopy and mapping of an amygdaloidal silica micrograin in the breccia matrix. Micro-Raman spectroscopy and mapping of an amygdaloidal.
Illustration of MIS-C and the characterization of the device structure
Fig. 2 Raman characterization of CVD-grown graphene.
Fig. 2 Large-area and high-density assembly of AuNPs.
Fig. 2 Electrical and scanning probe characterization.
Fig. 1 Optical and STEM characterization of vdW heterostructures.
Fig. 4 Giant optical chirality.
by Masaki Yamawaki, Masato Ohnishi, Shenghong Ju, and Junichiro Shiomi
Superconducting topological surface states in the noncentrosymmetric bulk superconductor PbTaSe2 by Syu-You Guan, Peng-Jen Chen, Ming-Wen Chu, Raman Sankar,
Fig. 1 Schematic view and characterizations of FGT/Pt bilayer.
Dipole-like electrostatic asymmetry of gold nanorods
Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation by Yi Du, Jincheng Zhuang, Jiaou Wang, Zhi Li, Hongsheng Liu, Jijun Zhao, Xun.
Fig. 4 Theoretical analysis of the FeN4/GN structure and the catalytic reaction process by DFT calculations. Theoretical analysis of the FeN4/GN structure.
HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides by Michal J. Mleczko, Chaofan Zhang, Hye Ryoung Lee, Hsueh-Hui Kuo, Blanka Magyari-Köpe,
Fig. 4 Micro-Raman analyses of high-pressure SiO2 phases.
Fig. 1 MIR photovoltaic detector based on b-AsP.
Fig. 6 MSC encapsulation in vitro within PdBT cross-linked gels.
Fig. 3 Micro-Raman analyses of another amygdaloidal silica micrograin in the breccia matrix. Micro-Raman analyses of another amygdaloidal silica micrograin.
Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics by Ding Zhong, Kyle L. Seyler, Xiayu Linpeng, Ran.
Fig. 1 Charge manipulation and readout in diamond.
Fig. 3 Electronic conductivity studies.
Fig. 3 Depth-resolved structural characterization of perovskite nanocrystals in npSi films. Depth-resolved structural characterization of perovskite nanocrystals.
Fig. 4 Imaged polarization effects.
Fig. 5 Superpositions of OAM.
Fig. 2 Pump-probe near-field images showing the evolution of the EP wave packet in WSe2. Pump-probe near-field images showing the evolution of the EP wave.
Fig. 2 Observation of type II Weyl nodes in LaAlGe.
Bulk-boundary correspondence and topological nontrivial nature of TaP
Fig. 5 Distributions of cell nuclear area values and internuclear distances in the breast tumor specimens (Figs. 3 and 4), where bin interval = 8 and n.
Fig. 3 Performance of the solid wire supercapacitors of 3D graphene-CNT fiber for energy storage. Performance of the solid wire supercapacitors of 3D graphene-CNT.
Fig. 1 Distribution of deformation and aqueous alteration in MIL
Fig. 2 Structural information.
Fig. 3 Supraballs and films assembled from binary 219/217nm SPs/SMPs.
Fig. 3 X-ray ptychography and STXM absorption spectromicroscopy.
Fig. 3 Optimization of the antidot GNR structure.
Fig. 4 Borophene-graphene vertical heterostructures.
Fig. 1 Doping schematics and optical properties.
Fig. 1 Sacrificial writing into functional tissue (SWIFT).
Fig. 2 Imaging blood vessel before and after closure.
Fig. 2 DFT calculations of stability and bandstructure of gallenene polymorphs. DFT calculations of stability and bandstructure of gallenene polymorphs.
Fig. 5 Modeling of the ASE threshold using the kinetic equations and experimental parameter inputs. Modeling of the ASE threshold using the kinetic equations.
Presentation transcript:

Fig. 1 Bands and hybridization in graphene-encapsulated WSe2 measured by μ-ARPES. Bands and hybridization in graphene-encapsulated WSe2 measured by μ-ARPES. (A) Optical image and (B) schematic cross section of an exfoliated WSe2 flake with monolayer (1L), bilayer (2L), and bulk regions partially capped with monolayer graphene (G) and supported by a graphite flake on a doped silicon substrate. (C) Angle-integrated spectra from each region in (A). (D) Map of the energy of peak emission, showing contrast between 1L, 2L, and bulk regions. (E) Momentum slice through the graphene K point, showing that EF is at the Dirac point. (F) Momentum slice along Γ − K (WSe2) in the 1L region. The intensity is twice-differentiated with respect to energy. Avoided crossings between the graphene valence band (white dotted line) and the monolayer WSe2 bands are indicated by white arrows. (G) Momentum slice of unprocessed (top) and twice-differentiated ARPES (bottom) along Γ − K (WSe2) in the 1L (left), 2L (middle), and bulk (right) regions. Below is the intensity twice-differentiated with respect to energy with overlaid DFT calculation (red dashed lines). Neil R. Wilson et al. Sci Adv 2017;3:e1601832 Copyright © 2017, The Authors