K. Takechi and M. A. Lieberman

Slides:

Advertisements

Similar presentations

Jozef Stefan Institute Plasma laboratory Ljubljana, Slovenia Chemical cleaning with neutral oxygen or nitrogen atoms Miran Mozetič Jozef Stefan Institute,

Advertisements

NARROW GAP ELECTRONEGATIVE CAPACITIVE DISCHARGES AND STOCHASTIC HEATING M.A. Lieberman Department of Electrical Engineering and Computer Sciences University.

Alex.A. Samarian and Brian.W. James School of Physics, University of Sydney, NSW 2006, Australia Sheath edge location The charge of dust particles in sheath.

Powerpoint Jeopardy Category 1Category 2Category 3Category 4Category

Permanent-magnet helicon sources for etching, coating, and thrust Francis F. Chen, UCLA Low Temperature Plasma Teleseminar, June 14, 2013; originally prepared.

TEST GRAINS AS A NOVEL DIAGNOSTIC TOOL B.W. James, A.A. Samarian and W. Tsang School of Physics, University of Sydney NSW 2006, Australia

Effect of working pressure and gas flow rate on RF discharge Discharge gas: Argon; Forwarded RF power: 750 W; Substrate biased voltage: -200 V.

THE WAFER- FOCUS RING GAP*

INVESTIGATIONS OF MAGNETICALLY ENHANCED RIE REACTORS WITH ROTATING (NON-UNIFORM) MAGNETIC FIELDS Natalia Yu. Babaeva and Mark J. Kushner University of.

RF fields simulations Alexej Grudiev, BE-RF 14/11/2013 Linac4 Ion Source Review, CERN.

RC Circuit Experiment 1. Set up three different RC circuits using the components supplied. 2. Measure the voltage across the capacitor as a function of.

F. Cheung, A. Samarian, W. Tsang, B. James School of Physics, University of Sydney, NSW 2006, Australia.

F.M.H. Cheung School of Physics, University of Sydney, NSW 2006, Australia.

Submillimeter spectroscopic diagnostics in a semiconductor processing plasma Yaser H. Helal, Christopher F. Neese, Jennifer A. Holt, Frank C. De Lucia.

1 Absolute Pressure Sensors Z. Celik-Butler, D. Butler and M. Chitteboyina Nanotechnology Research and Teaching Facility University of Texas at Arlington.

10th ITPA conference, Avila, 7-10 Jan Effects of High Energy Ions Accelerated in front of ICRF Antennas in LHD S. Masuzaki on behalf of the LHD Experimental.

Ion Energy Distributions from a Permanent-Magnet Helicon Thruster Francis F. Chen, UCLA Low Temperature Plasma Physics Webinar, January 17, 2014.

FLCC March 28, 2005 FLCC - Plasma 1 Fluid Modeling of Capacitive Plasma Tools FLCC Presentation March 28, 2005 Berkeley, CA David B. Graves, Mark Nierode,

8:30 – 9:00Research and Educational Objectives / Spanos 9:00 – 9:45 CMP / Doyle, Dornfeld, Talbot, Spanos 9:45 – 10:30 Plasma & Diffusion / Graves, Lieberman,

Society of Vacuum Coaters, TechCon 2013, Providence, RI, April 22-25, 2013.

DEVELOPMENT OF ION ENERGY ANGULAR DISTRIBUTION THROUGH THE PRE-SHEATH AND SHEATH IN DUAL-FREQUENCY CAPACITIVELY COUPLED PLASMAS* Yiting Zhanga, Nathaniel.

Simulations of various aspects of the PPS Various members of the collaboration, to be enumerated later.

Permanent-magnet helicon sources for etching, coating, and thrust Francis F. Chen, UCLA 2013 Workshop on Radiofrequency Discharges, La Badine, La Presqu’ile.

5/24/ Plasma Assisted Controllable Bonding SFR Workshop May 24, 2001 Yonah Cho, Chang-Han Yun, and Nathan Cheung Berkeley, CA 2001 GOAL: To establish.

11/8/ Diagnostic and Etching Studies of Inductively Coupled Plasmas SFR Workshop November 8, 2000 Matthew Radtke, John Coburn, David Graves Berkeley,

11/8/ Spatially Resolved Heat Flux Sensor Array on a Silicon Wafer for Plasma Etch Processes SFR Workshop November 8, 2000 Mason Freed, Costas Spanos,

47th Annual Meeting of the Division of Plasma Physics, October 24-28, 2005, Denver, Colorado ECE spectrum of HSX plasma at 0.5 T K.M.Likin, H.J.Lu, D.T.Anderson,

Large Area Plasma Processing System (LAPPS) R. F. Fernsler, W. M. Manheimer, R. A. Meger, D. P. Murphy, D. Leonhardt, R. E. Pechacek, S. G. Walton and.

53rd Annual Meeting of the Division of Plasma Physics, November , 2010, Salt Lake City, Utah 5-pin Langmuir probe configured to measure the Reynolds.

Studies on 2.45 GHz microwave ion sources Abhishek Nag IISER, KOLKATA Presented By: G.O. Rodrigues IUAC, New Delhi Supervised By:

Commercial helicon sources inject plasma into a field-free region The MORI sourceA helicon injection expt.

Equipment and technological processes for manufacturing GaAs MMICs PLASMA ETCHING ICP ETCHING TALK 6 1.

Solid State Devices EE 3311 SMU

DC Sputtering Disadvantage #1 Low secondary electron yield

Multitube Helicon Source with Permanent Magnets

On Wafer Ion Flux Sensors

Study on Monatomic Fraction Improvement with Alumina Layer on Metal Electrode in Hydrogen Plasma Source Bong-Ki Jung, Kyung-Jae Chung, Jeong-Jeung Dang,

Seok-geun Lee, Young-hwa An, Y.S. Hwang

Saurabh J. Ullal, Anna R. Godfrey, Eray S. Aydil

at diagnostic position

DOE Plasma Science Center Control of Plasma Kinetics

PLASMA-WATER: SOLVATED ELECTRONS

ENERGY LOADING AND DECAY OF N2 VIBRATION

Influence of deposition rate and Time on nucleation of Er on a-c

COMPLEX ELECTRON ENERGY DISTRIBUTIONS IN ASYMMETRIC RF-DC DISCHARGES

Chapter 5 Plasma and Ion Beam Processing of Thin Films

In Corial PECVD SYSTEMS

SUPPRESSING NONLINEARLY-DRIVEN INHOMOGENEITIES IN HIGH FREQUENCY CCP’s

Confining instabilities in a complex plasma S. V. Vladimirov, A. A

PIC SIMULATIONS of ATMOSPHERIC PRESSURE He/H2O DISCHARGES

etching, coating, and thrust

Vacuum Beam Studies of Photoresist Etching Kinetics

Si DRIE APPLICATION In Corial 210IL.

Studies of Bias Induced Plasma Flows in HSX

SFR Workshop November 8, 1999 A.B. Wengrow, and N.W. Cheung

Testbed for Plasma-Wall and Etch Product Studies

PULSED DUSTY PLASMA FOR CONTROL OF NANOPARTICLE FLUXES TO A SUBSTRATE

Helicons are RF plasmas in a magnetic field

Instabilities in Electronegative Inductive Discharges

1.6 Glow Discharges and Plasma

DOE Plasma Science Center Control of Plasma Kinetics

Nanocoating Plasma Systems, Inc.

Autonomous temperature sensor for bake plate calibration

Development of Lithium Batteries for Powering Sensor Arrays

Silicon Etch Product Transport by an Inductively Coupled Plasma in Cl2

Instabilities in Electronegative Inductive Discharges

Instabilities in Inductive Discharges

Yaoxi Wu and M. A. Lieberman

On-Wafer Ion Flux Sensors

PLASMA-SURFACE INTERACTION (PSI) AT

Presentation transcript:

K. Takechi and M. A. Lieberman Photoresist Etching with Oxygen Plasma in Large Area Plasma Source (LAPS) SFR Workshop November 8, 2000 K. Takechi and M. A. Lieberman Berkeley, CA 2001 GOAL: Etch photoresist in the LAPS to examine process uniformity by 9/30/2001. 11/8/00

Experimental LAPS Setup Antenna coil embedded in the plasma Eight quartz tubes threaded by copper antenna tubes 36.0 cm x 46.5 cm processing area Plasma Voltage sensor Rs Xm(0.5uH) D X1 900 pF (fixed) 12- 1000 pF New series-parallel system configuration Vrf C Bm1 B Bm2 12- 500 pF X2 A 11/8/00

Oxygen Discharge Model Substrate holder metal (Center of the chamber) (cm) 5 Side metal Calculation area B.C. Vn=0 r1 r2 ….. r8 -5 -15 R Quartz 15 (cm) Chamber geometry used in the model Particle balance : Power balance : 11/8/00

Ion flux profiles at substrate surface for various gas pressures (simulation results) 11/8/00

O-atom flux profiles lost to substrate surface for various gas pressures (simulation results) 11/8/00

Photoresist Etch Model E.R. : Etch rate ji : Ion current density at substrate surface pO : O-atom pressure at substrate surface kref : Ion-induced desorption rate constant at Vbias= 0 V Plots of etch rate vs. pressure for various rf powers. The fits are from the above equation with simulation results. 11/8/00

Effect of applying a substrate bias on etch rate and uniformity Applying a Vbias leads to increase in both etch rate and uniformity over the processing area. Etch rate profiles at a gas pressure of 5 mTorr at Vbias= 0 V and Vbias= -80 V 11/8/00

Predicted etch rate profiles at a gas pressure of 5 mTorr at k(Vbias)/kref=1 and k(-80V)/kref=4 Simulation results support the experimental data, with increase in the etch rate and uniformity with applying a bias. 11/8/00

2002 and 2003 Goals Modeling silane deposition processes in LAPS, by 9/30/2002. Modeling reduced electron temperature and density processing plasmas in LAPS, by 9/30/2003. 11/8/00