MOS CAPACITOR Department of Materials Science & Engineering

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MOS CAPACITOR Department of Materials Science & Engineering Dae-Hong Ko Semiconductor Device Physics and Technologies dhko@yonsei.ac.kr

* MOS CAPACITOR ⇒Two terminal structure ⇒Metal Oxide Semiconductor CAPACITOR

* MOS CAPACITOR

◎ Energy Band Diagram of a MOS Capacitor with a P-type substrate

◎ Energy Band Diagram of a MOS Capacitor with a N-type substrate

* MOS CAPACITOR ◎ Depletion Layer Thickness

*n-type substrate ◎ At inversion point (threshold voltage) *p-type substrate *n-type substrate

■ Work Function Differences

* P+ and N+ POLY SILICON GATE

*MOS SUBSTRATE

Flat-Band Voltage Flat-band condition In real cases, Vox ≠ 0 1. work function difference 2. trapped charge in the oxide 1. Φms = Φm – Φs ≠ 0 2. Oxide charges - fixed charge : positive → broken or dangling covalent bonds near semiconductor- oxide interface →Q’ss close to the oxide-semiconductor interface

• p-sub or Under gate voltage for flat-band condition

* Threshold Voltage → Applied gate voltage required to achieve the threshold inversion point → Φs=2Φp for NMOS, p-sub Φs=2Φn for PMOS, n-sub

At inversion point Space charge width → maximum Energy band diagram of the MOS system with an applied positive gate voltage

* MOS CAP Capacitance-Voltage Characteristics - Ideal C-V Characteristics Three operating conditions, • Accumulation • Depletion • Inversion MOSCAP with p-type sub. 1. Accumulation If VG < 0 ⇒ induce an accumulation layer of holes in the semiconductor at the oxide-semiconductor interface ⇒ small VG change → Qm and QSD change

* MOS CAP 2. Depletion - VG : small positive voltage ⇒ induce a space charge region in the semiconductor ⇒ small differential change in VG induces a differential change in the space charge width As VG ↑ → xd ↑ → C’SD ↓ → C(depl)↓

At high frequency - different from low frequency case Two source of electrons in the inversion layer 1. diffusion of minority carrier electrons from the p-type sub across the space charge region 2. thermal generation of electron-hole pairs within the space charge region Both processes generate electrons at a particular rate ⇒ The electron concentration in the inversion layer CANNOT change INSTANTANEOUSLY. ⇒ The change in the inversion layer charge cannot respond to the high frequency AC voltage change.

Fixed oxide and interface charge effects two types of charges for C-V characteristics change. Fixed oxide charge & Interface charge 1. Fixed oxide charge - VFB shift negatively for positive fixed oxide charges. - Oxide charge → not a function of VG → parallel shift of C-V curve with oxide charge → same shape of C-V curve High-frequency characteristics of a MOSCAP with p-type sub

2. Interface state charge - At the oxide-semiconductor interface → periodic nature of semiconductor is abruptly terminated → electronic energy levels exist within the forbidden bandgap ⇒ Interface states - Charge can flow between the semiconductor and interface states → The net charge in the interface state is a function EF

Some are acceptor-like and some are donor-like

⇒ change electron occupancy in the states due to the VG charge ⇒ change in C-V characteristics