MOSFETs Version 1.0

MOSFET Portfolio Performance & Strategy

Business Objective To consistently achieve above-market PROFITABLE growth, utilizing our innovative and cost-effective PACKAGING technology, by leveraging PROCESS expertise and design excellence to deliver high quality MOSFET PRODUCTS.

Where We Compete Drain Current (Id) Battery Portable  Notebook PC  Digital Camera  Cell Phone  PDA  Portable Instrumentation Voltage Industrial  AC/DC Adaptors  Telecom Line Switching  VoIP Automotive  Electronic Power Steering  Anti Lock Braking Systems  Relay Drivers  High Intensity Discharge Lighting  Inter Module Communication  Solenoid driver Motor Control  DC Fan Control  H Bridge Applications  Spindle Control in HDD  Class D Audio System Power  DC/AC Inverters  Low Power DC2DC Power Management

Diodes MOSFET Portfolio: Performance Versus the Market Diodes MOSFET Portfolio Outperforms the Market Diodes MOSFET Portfolio growth is underpinned:  A focus on product innovation  Relentless reduction of costs  Close customer relationship

MOSFET Portfolio: Overview  Portfolio to cover the majority of MOSFET requirements.  In-house packaging to provide wide selection of competitive packaging options.  RoHS and Halogen free materials to meet latest industry environmental requirements.  AECQ101 qualification to meet the high reliability demands of the automotive industry. DIOFET is a trademark of Diodes Incorporated

BV DSS (V)SOT-963DFN 2-8 pin SOT-563SOT-523SOT-323SOT-363SOT-23 SC-59 SOT-26 SOT-25 SOT-223SOT-89TSSOP-8SOP-8LMSOP-8DPAK (TO-252) TO-220 ITO- 220AB/S E-Line / aa 70/80 50/60aa aaaaaa a 35/45 30aaaaaaaaaaaaa aaaaaaaaaa /45aaaaaaaaaaaaaa -50/60 -70/80aaaaaaaaaaaa /450aaaaaaaa aaa A Wide and Evolving Portfolio

MOSFET Product Spotlight

DFN1006 Portfolio: Probably the Smallest MOSFET Available  Small footprint The DFN occupies 0.6mm 2 enabling designers to reduce PCB utilized while maintaining performance. The DFN provides an equivalent or better performance than SOT723 but occupies only 40% of the PCB area. The DFN provides an equivalent performance to many SOT23 yet has a footprint that is 13 times smaller.  Low profile The DFN has an off-board height of 0.4mm (UFB4) or 0.5mm (UFB) making it ideal for thin profile consumer electronic products.  Thermally efficient package Low junction to ambient thermal resistance (R thj-a ) support power dissipation up to 1.3W under continuous conditions. Low R thja enables DFN1006 to replace larger less efficient leaded packages such as SOT723, SOT523, SOT323 while maintaining or improving performance.  Low R DSON The DMP3010LPS has been designed to withstand the high pulse avalanche energy that can be induced by inductive loads. The Diodes Advantage PartPolarity V DS (V) V GS (±V) P 25º (W) I 25º (W) ESD Diode (Y/N) V TH (V)R DS(on) max Ohms at V GS = Q g (nc)Typ. C iss (pF) DMN26D0UFB4N DMP210DUFB4P DMN2300UFB4N Y DMP21D0UFBP DMN3730UFB4N Y DMN3484UFB4N DMP3795UFB4P DMN62D1SFB4N

ZXMS6006DG/SG and ZXMS6006DT8 Self-protected MOSFETs raise protection levels for inductive loads  Low Thermal Resistance The SM8 package has a thermal resistance 30% lower than competing SO8 solutions, enabling cooler running more reliable solutions.  Excellent R DS(ON) Minimize the conduction the conduction losses through the device, ideal for high efficiency power management applications.  Short Circuit Protection Device protects both itself and the load from over current conditions.  Short Circuit Protection Particularly important when driving inductive loads, to protect against over-voltage breakdown. The Diodes Advantage

Dual DIOFET DIOFET delivers plug-and-play efficiency boost for point-of-loads converters  Plug-and-Play Solution High-side MOSFET and low side DIOFET co-packaged in SO8 to provide single, simple solution.  Low R DS(ON) The low R DS(ON) of the DIOFET minimize the conduction losses traditionally associated with high duty cycle synchronous MOSFETs.  Low V SD(ON) of the integrated Schottky The monolithically integrated Schottky has a forward voltage (V SD ) that is 48% lower than the intrinsic body diode of comparable MOSFETs, reducing the losses due to body diode conduction.  Integrated Schottky has low Q rr The low Q rr of the integrated Schottky reduces body diode switching losses.  Lower operating temperature DIOFET operates at a temperature 5% lower than that of competing solutions. Reduced operating temperature minimizes conduction losses in surrounding components and increase reliability.  Low Q gd /Q gs ratio A lower gate capacitance ratio than competing solutions reduces the risk of shoot-through or cross conduction currents at high frequencies.  Avalanche rugged These MOSFETS have been designed to withstand the high pulse avalanche energy that can be induced by the output inductor during switching transitions. The Diodes Advantage

PowerDI ® 5060: DMP3010LPS PartConfigurationType V DS (V) V GS (±V) ESD Diode (Y/N) I 25ºC (A) R DS(on) max V GS V GS(th) min (V) C iss Typ (pF) Q g 10V4.5V DMP3010LPS SingleP3020N DMP3010LPS Increased performance and reduced PCB space  Low thermal resistance The PowerDI5060 package has a typical R thj-c of 2.1ºC/W which is 10 times lower than the familiar SO8 package. This superior thermal performance improves power dissipation, reduces MOSFET junction temperature, enabling cooler, more reliable running.  Low profile package The PowerDI5060 has a package that is <1.1mm making it ideal for thin applications.  Low R DS(ON) The low typical R DS(ON) of the DMP3010LPs ensures that on state losses are kept to a minimum during load switching and battery charging.  Avalanche rated The DMP3010LPS has been designed to withstand the high pulse avalanche energy that can be induced by inductive loads.  AECQ101, ‘Green’ and RoHS compliant The DMP3010LPS is qualified to AECQ101 standard and is RoHS compliant. The Diodes Advantage PowerDI is a registered trademark of Diodes Incorporated

MOSFET H-Bridges MOSFET H-Bridges optimize design of DC motor control and inverter circuits This new MOSFET H-Bridge portfolio can be used to replace 4 single devices (SOT23) or two complementary devices (SO8) in D.C. or motor control and inverter applications. The benefits that this portfolio brings to the end application are:  Simplify designs One MOSFET H-Bridge can replace two dual SO8’s, reducing PCB area footprint by 50%.  Reduce component count One MOSFET H-Bridge can replace two dual SO8’s reducing component count and PCB area.  Reduce inventory cost Only one component needs to be stocked instead of 2 or 4. The Diodes Advantage

MOSFET solutions save space and improve performance  Save space With a footprint of just 2mm 2, the DFN2020 package occupies 55% less board space than larger 3mm 2 packaged solutions.  Enables thinner applications The DFN2020 has an off-board height of 0.5mm enabling the design of lower profile applications.  Reduced component count Combines two discrete devices in one small form factor package, reducing component count. Space-Saving DFN2020 Package PartPackageConfigurationTypeSBR V DS (V) V GS (±V) I DS (A)P D (W)R DS(on) max Ohms at V GS = V GS(th) (V) Capacitance (pF) 25ºC 10V2.5V 1.8Vmin.max.Ciss DMP2160UFDBDFN2020 DualPN-20± ** DMS2220LFDBDFN2020 SinglePY-20± ** * DMS2120LFWBDFN3020 SinglePY-20± ** The Diodes Advantage

Focus Product

DIOFET: Raising Efficiency in PoL Converters DIOFET – What is it?  DIOFET monolithically integrates a MOSFET and Schottky into a single die. Where is DIOFET used?  DIOFET is used in the synchronous MOSFET positions in low-cost, high performance Point of Load (PoL) converters in consumer products such as Set top Boxes, Notebooks and Netbooks. What is DIOFET targeted at?  Standard MOSFETs of comparable R DS(ON).  MOSFET/Schottky combination of comparable R DS(ON). What is DIOFETs key selling feature?  DIOFET provides a more efficient solution, at a lower temperature, than comparable competing MOSFET/Schottky solutions and standard MOSFETs. Focus Product

DIOFET – Features and Benefits Low R DS(ON)  The low R DS(ON) of the DIOFET minimize the conduction losses traditionally associated with high duty cycle synchronous MOSFETs. Low V SD of the integrated Schottky  The monolithically integrated Schottky has a forward voltage (V SD ) that is 48% lower than the intrinsic body diode of comparable MOSFETs, reducing the losses due to body diode conduction. Integrated Schottky has low Q RR  The low Q RR of the integrated Schottky reduces high side MOSFET switching ON loss. Avalanche rugged  These MOSFETS have been designed to withstand the high-pulse avalanche energy. DIOFET: Product Portfolio Focus Product PartPackageConfigurationV DS (V)V GS (V) Id (A) Pd (w) Typical R 10 (mOhm) C iss (pF)Q g (nC) DMS3014SSS SO8N plus Schottky30± DMS3015SSSSO8N plus Schottky30±

Point-of-Load Converters: Sources of Power Loss Low-side power loss are due to:  Conduction losses in low side MOSFET  Body diode conduction in low side MOSFET  Reverse-recovery charge losses due to low side MOSFET body diode High-side power losses are due to:  Switching losses MOSFETs are the main source of losses in a PoL Focus Product

DIOFET: Comparison Against Competing MOSFET/Schottky Solutions 19V input to 5V output conversion9V input to 5V output conversion DIOFET increases efficiency of system power PoL by 0.5 to 1% compared with competing devices at load current > 4A Focus Product

19V input to 3V output conversion 9V input to 3V output conversion DIOFET increases efficiency of system power PoL by up to 1% compared with standard Trench MOSFET with similar R DS(ON) DIOFET: Comparison Against MOSFET with Comparable R DS(ON) Focus Product

DIOFET: Increases Efficiency, Lowers Temperature Thermal camera images of high-side and synchronous MOSFETs during application benchmark  Temperature of DIOFET is 7ºC less than that of a standard Trench MOSFET  Reduction in operating temperature improve system reliability Standard Trench MOSFETDIOFET Application Benchmark: 19V input to 5V output power conversion Focus Product

DIOFET Improves PoL efficiency due to: Low R DS(ON)  The low R DS(ON) of the DIOFET minimize the conduction losses associated with low-side synchronous MOSFETs. Low V SD of the integrated Schottky  Losses associated with body diode CONDUCTION of the low synchronous MOSFET are minimized due to the lower (V SD ) of the DIOFET monolithically integrated Schottky has a forward voltage that is 48% lower than the intrinsic body diode of comparable MOSFETs, reducing the losses due to body diode conduction. Integrated Schottky has low Q RR  The low Q RR of the integrated Schottky reduces high side MOSFET switching losses. DIOFET Improves the robustness and reliability of PoL converters by:  By providing an improvement in efficiency while operating at a lower temperature. For every 10 degree reduction in operating temperature system reliability doubles.  DIOFET is avalanche rated enabling it to withstand high pulse inductive energy from inductors or transformers. Such avalanche ratings improve the robustness of the PoL. DIOFET: Summary Focus Product

MOSFET Applications

MOSFET for LED Current Balancing Key Products  ZXMN10A08G  ZXMN10A11G  ZXMN10A25G Function  MOSFET regulates LED current during normal operation.  MOSFET is switched off under LED string short-circuit condition to protect the system power supply.  PWM dimming of MOSFET to control brightness level. Requirements  V DS 100V or greater.  Low R DS(on) – reduces conduction loss and improves efficiency.  Low Q G for fast switching enables high BLU PWM dimming resolution.  Small thermally efficient package – SOT223, PowerDI5. Applications

MOSFETs for LED Current Balance Function PartPackageConfigurationPolarity V DSS V GSS IDID PDPD R DS(on) max V GS V GS(th) C iss Typ Q g (nC) Q g (nC) (V) (±V) (A) (W) ZXMN10A25GSOT223SingleN ZXMN10A08GSOT223SingleN ZXMN10A08GSOT22-6SingleN ZXMN10A11GSOT223SingleN ZVN4310GSOT223SingleN ZXMN15A27GSOT223SingleN15025TBC ZXMN15A27E6SOT23-6SingleN15025TBC ZXMN15A24E6SOT23-6SingleN15025TBC ZXMN20B28GSOT223SingleN Note: Products highlighted in blue are die repackage possibilities – contact Diodes for further information Applications

30V P-Channel MOSFET for Asynchronous Rectification Application Key Products  DMP3056LDM  ZXMP6A17G Function  The MOSFET is used as power switch in asynchronous buck switching regulators (converters) to step the voltage down to a lower level.  Asynchronous buck switching regulators that feature an external P-channel MOSFET are cheaper and quicker to realise than their N-channel counterparts, due to the lower required component count.  Buck regulators that utilize a P-channel MOSFET are less efficient than those that utilize external N channel MOSFETs. Requirements  V DS 30V or greater.  Low R DS(on) – reduces conduction loss and improves efficiency.  Low Q G to minimize switching losses at high frequency. Applications

PartPackageConfigurationPolarity V DSS V GSS IDID PDPD R DS(on) max V GS V GS(th) C iss Typ Q g (nC) Q g (nC) (V) (±V) (A) (W) DMP3020LSSSO-8SingleP to ZXMP3F37N8SO-8SingleP to DMP3056LDMSOT23-6Singlep to DMP4025LK3TO252SingleP-4020TBC to DMP4025SSSS0-8SingleP-4020TBC to DMP4050SSSSO-8SingleP to DMP4051LK3TO252SingleP to ZXMP4A16GSOT223SingleP to ZXMP6A17E6SOT223SingleP to ZXMP6A17GSOT223SingleP to – ZXMP6A17N8SO-8SingleP to V and Greater P-Channel MOSFETs for Asynchronous Rectification Applications

MOSFETs for Low-Voltage DC Motor Control Key Products  Function  To convert voltage into rotational energy.  MOSFET or IGBTs have in general superseded the bipolar transistor as the switching element as they are both Voltage controlled devices making the gate drive circuitry simpler.  Motor, V, I and P characteristics and the stalled current (up to six times steady state) determine the MOSFET that is selected. Requirements  V DS 30V or greater.  Low R DS(on) – reduces conduction loss and improves efficiency.  Low Q G to minimize switching losses at high frequency. Motor Control IC M Q1 Q2 Q3 Q4 Vcc Key Products  ZXMC4559DN8  ZXMC10A816DN8  ZXMHC3F381N8 Applications

Summary of MOSFET Portfolio: DC Motor Control Applications Single devices up to +/-100V BV dss Dual devices up to +/- 100V SOT23 DFN832SM8 H-Bridges +/- 100 V Zone of Competition 30V MOSFETs for 5 to 12V supplies 60V MOSFETs for 24V supplies 100V MOSFETs for 48V supplies SM8SO8 TSOT23-5DPAKSO8 Summary Applications

Key Products for Motor Control PartPolarity BV DSS V GS I 25 O C R DS ON Max Ciss Vds=10V Qg Vgs=10V Package VVGSA mm mm pfnc ZXMHC3F381N8 2*N SO8 2*P ZXMHC3A01N8 2*N SO8 2*P ZXMHC6A07N8 2*N SO8 2*P ZXMHC10A07N8 2*N SO8 2*P Benefits  Replaces two complementary SO8s or four SOT23 discretes.  Reduces footprint by 50%.  Reduces inventory cost.  Benefits addresses applications operating up to 48V. Features  2N plus 2P in one SOIC package.  BV DSS up to 100V. Applications

MOSFETs for VoIP Applications Key Products  DMN6068SE  ZXMN15A27K  ZXMN20B28K Function  MOSFET is the switching element in the SLIC (Subscriber Line Interface circuit) D/DC converter that boosts DC voltage to required VBAT level. Requirements  V DS 60v or greater.  High pulse current capability.  Avalanche Rugged – able to withstand the high pulse energy during transformer switching transition. Applications

MOSFET Portfolio for VoIP Applications PartPackage V DSS (V) P D (W) I D (A) I DM (A) R DS(on) max V GS C iss Typ (pF) Q g Typ Q g Typ E AS UIS (Note 1) 5V6V10V ZXMN20B28KTO252-3L Yes (Note 2) ZXMN15A27KTO252-3L Yes (Note 3) ZXMN10A25KTO252-3L No ZXMN10A08GSOT No ZXMN10A11KTO252-3L No ZXMN10A11GSOT No ZXMN7A11KTO252-3L No ZXMN7A11GSOT No DMN6068LK3TO252-3L Yes (Note 4) DMN6068SESOT Yes (Note 4) DMN6066SSSSO Ask (Note 5) DMN6066SSDDual SO Ask (Note 5) Notes: 1. Single pulse avalanche energy (E AS ) testing using an Unclamped Inductive Switch (UIS) test in production. 2. E AS = 73mJ with UIS conditions of L = 4.83mH, I AS = 5.5A, R G = 25Ω, V DD = 100V, starting T J = 25°C. 3. E AS = 55mJ with UIS conditions of L = 5.95mH, I AS = 4.3A, R G = 25Ω, V DD = 100V, starting T J = 25°C. 4. E AS = 37.5mJ with UIS conditions of L = 3.0mH, I AS = 5.0A, R G = 25Ω, V DD = 50V, starting T J = 25°C. 5. Rugged by design. Not tested, but if required 100% UIS test can be implemented same as Note 4. Applications

Self-Protected MOSFET for Automotive Applications Key Products  ZXMS6004FFTA  BSP75G/BSP75N Function  To provide load switching function at DC frequencies while providing integral protection such that the device protects itself and the load from supply-borne transients. Over-current protection Logic IN dV/dt limit Over- temperature protection. Over-voltage Protection Human body ESD protection D S Applications Requirements  V DS >40V.  Over-voltage protection.  Over- current protection.  Over-temperature protection.  ESD protection.

Self-Protected MOSFET for Automotive Applications PartConfigurationTAB BV DSS (V) I D (A) V IN = PD (W) R DS(on) max V IN V DS (S/C) E AS (mJ) Package 3V5V10VV IN = 5V ZXMS6004DT8DualN/A SM8 ZXMS6005DGSingleDrain SOT223 ZXMS6005DT8DualN/A SM8 BSP75GSingleDrain SOT223 BSP75NSingleSource SOT223 ZXMS6001N3SingleSource SOT223 ZXMS6002GSingleDrain SOT223 ZXMS6003GSingleDrain SOT223 ZXMS6004SGSingleSource SOT223 ZXMS6004DGSingleDrain SOT223 ZXMS6004FFSingleN/A SOT23F ZXMS6004SGSingleSource SOT223 ZXMS6004DT8DualN/A SM8 ZXMS6005DGSingleDrain SOT223 ZXMS6005SGSingleSource SOT223 ZXMS6005DT8DualN/A SM8 ZXMS6006DGSingleDrain SOT223 ZXMS6006SGSingleSource SOT223 ZXMS6006DT8DualN/A SM8 Applications

MOSFET for LED Lighting Key Products  ZXMN6A08E6  DMN6068SE Function  MOSFET is used as an external switching element with Buck or Boost converters such as ZXLDxxx series. Requirements  V DS 40V or greater.  Low R DS(on) – reduces conduction loss and improves efficiency.  Low Q G to minimize losses at fast switching high BLU PWM dimming resolution.  Small thermally efficient package – SOT223, SOT23-6. Applications

PartPolarity BV DSS IDID P T A =25ºC R DS(on) V GS V GS =10V VAWmOhms ZXMN6A07FN SOT23 ZXMN6A08E6N SOT23-6 ZXMN6A08GN DPAK DMN6068SEN DPAK ZXMN6A11GN SOT223 ZXMN7A11GN SOT223 ZXMN10A08E6N SOT23-6 ZXMN10A08GN SOT223 MOSFET for LED Lighting Applications

MOSFET for Desktop PC Applications CPU Power Applications Function  High power density, high-efficiency synchronous rectification circuits (known as Voltage Regulator Modules) are used to deliver a low voltage and high current to the microprocessor efficiently.  High-side synchronous MOSFETs feature a low figure of merit (R DS(ON) *Qg). Whereas the low-side MOSFETs feature low R DS(ON).  Additionally, the low-side MOSFET should have low VF and fast Qrr to minimize body diode losses. Requirements  V DS 30V.  Low R DS(on) – reduces conduction loss and improves efficiency.  Low Gate Charge (Qg) to minimize switching losses and improve efficiency.  High current handling capability.  Thermally efficient package – TO252 / PowerDI  DMN3009LK3  DMN3006LK3

MOSFET for Desktop PC Applications PartPackageConfigurationPolarity V DSS V GSS IDID PDPD R DS(on) max V GS V GS(th) C iss Typ Q g (nC) Q g (nC) (V) (±V) (A) (W) DMN3009LK3TO252SingleN TBD DMN3006LK3TO252SingleN TBD Applications

Function  High power density, high-efficiency and low synchronous rectification circuits( often referred to as System Power) are used to deliver a low voltage and high current to the microprocessor efficiently.  High-side synchronous MOSFETs feature a low figure of merit (R DS(ON) *Qg). Whereas the low-side MOSFETs feature low R DS(ON).  Additionally, the low-side MOSFET should have low VF and fast Qrr to minimize body diode losses. body losses. System Power  DMG4496SSS  DMS3015SSS MOSFET for Notebook System Power Applications Applications DDR Power  DMS3016SSS Requirements  V DS 30V.  Low R DS(on) – reduces conduction loss and improves efficiency.  Low Gate Charge (Qg) to minimize switching losses and improve efficiency.  Low V SD, Qrr body diode of synchronous MOSFET (Diodes DIOFET address this requirement).  High current handling capability.  Thermally efficient package – PowerDI 3333 PowerDI 5060.

MOSFET for Notebook System Power Applications PartPackageConfiguration Schottky Diode Polarity V DSS V GSS IDID PDPD R DS(on) max V GS V GS(th) C iss Typ Q g (nC) Q g (nC) (V) (±V) (A) (W) DMG4496SSSSO8SingleNN DMS3015SSSSO8SingleYN DMS3016SSSSO8SingleYN DMS3019SSD SO8 Dual NN SO8YN System / DDR Power MOSFET Applications

Function  In order to minimize battery power MOSFETs are used as load switches to switch in or out of circuit various functions within the Notebook. MOSFET for Notebook System Power Applications Applications Battery / Load Switch  DMG4435SSS  DMG4413LSS Requirements  V DS 30V.  P-channel for switching positive rails, N-channel for switching negative rails.  Low R DS(on) – minimizes conduction losses, particularly important for those used in series with the battery. Battery Protection  DMP3160L  DMP3100L

MOSFET for Notebook Applications PartPackageConfiguration Schottky Diode Polarity V DSS V GSS IDID PDPD R DS(on) max V GS V GS(th) C iss Typ Q g (nC) Q g (nC) (V) (±V) (A) (W) DMG4435SSSSO8SingleNP DMG4413LSSSO8SingleNP3025TBD - DMP3160LSOT23SingleNP DMP3100LSOT23SingleNP Load Switch Power MOSFET Applications

Function  MOSFETs are used to control the charge/discharge function of the battery park and are also used as load switches in various peripheral functions. Key Products  DMG1012T  DMG1016V  DMG1026UV  DMN2400VK MOSFET for Smart Phone Applications Applications Requirements  Small footprint, low-profile, thermally efficient package.  Low V gsth.  Low On-Resistance.  Fast Switching Speed. Key Products  DMN2300UFB4  DMP21D0UFB4  DMP21D5UFB4  DMN3730UFB4 Key Products  DMG5802LFX

MOSFET for Smart Phone Applications PartPackageConfiguration ESD (KV) Polarity V DSS V GSS IDID PDPD R DS(on) max V GS V GS(th) C iss Typ Q g (nC) Q g (nC) (V) (±V) (A) (W) DMN2300UFB4 DFN1006H4-3 Single2N DMN2300UFDDFN Single2N DMP21D0UFB4 DFN1006H4-3 Single3P DMP21D0UFDDFN1212-3Single3P DMN3730UFB4 DFN1006H4-3 Single1N DMG1012TSOT523Single2N DMG1016VSOT563Dual2.5 N P DMG1026UVSOT563Dual2N DMN2004VKSOT563Dual2N DMP21D0UFB4DFN1006H4-3Single2P DMP21D5UFB4DFN1006H4-3Single2P DMP58D0LFBDFN1006-3Single2P DMN62D0LFBDFN1006-3Single2N DMG5802LFXDFN5020Dual2N Applications

Product Road Maps

Q Q Q Q Q Product Roadmap: Process Development 100V Process development for Adaptor and LED applications Q V Process development – <1 Ω 600V FET for SMPS and off-line applications 40V, 60V and 100V DIOFET development LDMOS N and P channel development

Q Q Q Q Q Product Roadmap: Overview Low Side Self-Protected MOSFET (IntelliFET TM ) – Range Expansion Low Side Self-Protected MOSFET (IntelliFET TM ) – Range Expansion Q V, 60V low R DS(ON), avalanche rated, 175ºC MOSFETs for Automotive Applications 20V, 30V, 60V N & P channel DFN1006 Portfolio 12V P channel in DFN1616 and DFN2020 for Battery Protection IntelliFET is a trademark of Diodes Incorporated

Q Q Q Q Q Product Roadmap: Overview Q V PowerDI5060 N and P channel MOSFETs 30V & 40V N & P channel MOSFETs packaged in PowerDI3333 (New thermally efficient package) 12V P channel in DFN1616 and DFN2020 for Battery Protection DFN1212 (footprint compatible with SOT723) Portfolio

MOSFETs Version 1.0