1. ・Multi-Pixel Photon Counter (MPPC)
Newly Developed Semiconductor Detectors
・Multi-Pixel Photon Counter (MPPC)
　　　・Fully-Depleted Back-illuminated CCD
HAMAMATSU PHOTONICS K.K.
Koei Yamamoto
　　　　　　　　　　　　　　　　　　　　　　　June 27th PD07 Kobe
CONFIDENTIAL

2. ■ Multi Pixel Photon Counter（MPPC）
What’s MPPC?
Solid state photon counter having
Multi pixelated Geiger-mode APDs
with self-quenching resistance
The MPPC (Multi-Pixel Photon Counter) is developed by HAMAMATSU PHOTONICS K. K.
and it is one of the products of Si-PM (Silicon Photo multiplier) family which was originally developed in Russia.
HAMAMATSU MPPC is designed as a photon counting device based on structures of a Si APD which was adopted by CERN (CMS).
HAMAMATSU named this product MPPC which is a trademark.

3. The candidates of name in SiPM faimily
　　SiPM (Silicon Photo Multiplier)
　　　　　　　SiPMT (Silicon Photo Multiplier Tube)
MRS-APD (Metal Resistive Semiconductor APD)
SPM (Silicon Photo Multiplier)
MPGM APD (Multi Pixel Geiger-mode APD) AMPD (Avalanche Micro-pixel Photo Diode) SSPM (Solid State Photo Multiplier) GM-APD (Geiger Mode APD) SPAD (Singe Photon Avalanche Diode)
MPPC : Multi Pixel Photon Counter

4. What is the structure of MPPC to improve the performances

5. Photo Absorption coefficient of Silicon

7. electron
electron
holes
holes

8. CMS(CERN)　APD

9. Hamamatsu Reverse Structure APD for CMS
E field strength P+ P N N- N+
Hamamatsu Reverse Structure APD for CMS
・　APD structure used in the electromagnetic Calorimeter of CMS.
・　The p/n junction is formed in an epitaxial layer with　50μm thickness.
・　Bias 350 to 400V to get gain 50

10. Back illumination type
p－-epi
p＋＋-subst.
N/P-Reach through p＋ n
n－-epi
n＋＋-subst. n＋ p p－ p＋
P/N-Reach through
N/P-Reach through
Back illumination type p＋
p－-epi
n＋＋-subst.
HPK Reverse structure

11. What are the characteristics of MPPC
1600 pixel

12. ■ Pixel number and application
PET
HEP calorimeter
Fluorescence meas.
Neutrino detection
25um pitch
1600pixel
50um pitch
400pixel
100um pitch
100pixel
Dynamic range　wide　　　　　　　　　　　　　　 narrow
The linearity is up to about 60% of the total pixels toward incident photons ; plural photons may enter one pixel beyond it
Geo. efficiency low（10～40%）　　 high（～90%)

13. ■ Specification of 1mm□, MPPC
1600
400
100

14. ■ Bias vs. Gain S10362-11-025U/C S10362-11-050U/C, -100U/C
50μm 400pixels
25μm 1600pixels
100μm 100pixels
S U/C S U/C, -100U/C

15. ■ Bias vs. Dark count S10362-11-025U/C S10362-11-050U/C, -100U/C
25μm 1600pixels
50μm 400pixels
100μm 100pixels
S U/C S U/C, -100U/C

16. Photon Detection Efficiency （PDE）
100μm Pixel
（100 pixel type）
50μm Pixel
（400 pixel type）
25μm Pixel
（1600 pixel type）
※including the cross-talk and after pulse

17. ■ Output signal of MPPC Photon counting by pulse height （liner Amp.）
Photon counting by output charge
（charge Amp.）

18. Energy Resolution MPPC: 50mm pitch, 3mm square LSO: 3mm x 3mm x 20mm
13%

19. Gain uniformity （400 pixel, 100 samples）

20. PDE uniformity （400 pixel, 100samples）

21. 1600 pixel Microscopic view
S U ( )

22. Laser Scan in One Pixel
Pin-point scan ：YAG laser　(l = 532 nm) with spot size ~ 1 mm.
Variation of photon sensitivity and gain in one pixel　are evaluated.
Observed variation is 2 ~ 5 % in a sensitive area
for the 100 / 400 / 1600 pixel MPPCs.
1600 pixel Sensitivity
1600 pixel Gain
Variation ~ 3 %
Gain (x 105)
y-point (1mm pitch)
Sensitivity (arbitrary)
y-point (2mm pitch)
One pixel
x-point (1mm pitch)
x-point (2mm pitch)

23. Time resolution at center in different pixel
MPPC: MPPC:1mm2 50μm pitch

24. Time resolution in one pixel
MPPC:1mm2 50μm pitch

25. Package Developments

26. Plastic PKG（1mm□ × 1ch.）
4.2
3.2
1.3

27. SMD PKG（1mm□ × 1ch.）
1.0
2.4
1.9
[mm]

28. SMD PKG（3mm□ × 1ch.）
1.0
4.4
3.9
[mm]

29. CERAMIC PKG（3mm□ × 1ch.）
2.0
7.2
5.9

30. CERAMIC PKG（3mm□ × 4ch.）
8.1
2.0
8.95

31. ■　MPPC’s future plan
・Increase reproducibility and uniformity
・ Large sensitive area , Array and Matrix
・Enhance PDE
・Suppress after pulse and cross talk
・Quenching resistance optimization
・Package development (small, cheap, rugged)
・Custom design ( pitch, package, array)

32. Al optical separation and Trench etching

33. MPPC Module Features -Employs a Geiger-mode multi-pixel APD(MPPC)
-Integrates a signal readout circuit ideal for MPPC
-Built-in high-voltage circuit and temperature-compensated circuit
-Three types of output:
analog, comparator, pulse calculation value
-USB interface for easy handling: driven by USB bus power
-Compact and light weight

34. MPPC Module block diagram
Power ( Use USB bus power )
Output-3 ( pulse calculation value)
BUS line
Output-1 ( analog out )
Output-2 ( comparator out )

35. Characteristics(analog output)PC
USB
Measurement
C U
C U

36. Characteristics(temperature stability of Gain)

37. Fully-depleted thick back-illuminated CCD

38. Subaru Telescope
山頂観測所
山麓オフィス

39. Target
Collaboration with National Astronomical Observatory of Japan for a next generation instrument for Subaru
Telescope：a very wide-field CCD camera which named Hyper　Suprime Camera(HSC).
The CCD format： 4 side buttable, 2k×4k 15um square pixels with 4 low noise output amplifiers.
QE Require
400nm 60%
700nm 85%
1000nm 60%
900nm 95%
10e- rms at 1MHz -

40. UV-NIR, X-ray Absorption Efficiency
Absorption Length [mm]
1000
UV-IR Light
X-ray
100 10 1
0.1
0.01
Wavelength [nm]
Energy [keV]

41. CCD fabrication Technology
Standard front processing through about 10 masking steps
6inch process line
Conventional CCD fabrication technology except N-type high-resistivity silicon
3 layer polysilicon
After front process, wafers are sent out for backgrinding and backpolishing
The wafer are thinned 600um to um.
Active accumulation and deposition of antireflection coating
Front metallization process
Dicing and Assembly

42. CCD Structure and Format

43. Specification and evaluation results
CCD Structure
FFT or FT
Pixel size
15um square
Number of active pixels
2048(H)x4096(V) or 2048(V)
Vertical clock phase
3phases
Horizontal clock phase
2phases or 4phases
Output
One stage MOSFET SF 4ch
Package
Aluminum Nitride
CTE
>
Full well capacity
>150ke-
Dark
<5e-/pixel/hour
CCE
5uV/e-
Readout noise
<5e- at 130kHz
Quantum efficiency
40% at 400nm
90% at 650nm
40% at 1000nm

44. 2k4k BICCD assembly technology
The 2k x 4k pixels 4 side buttable CCD
The size is 31.54mm x mm
66Pins
On-PKG Pre-Amplifier , Thermistor

45. 4 side buttabletechnology(3x3 chips)

46. Good surface flatness

47. Improvement of cosmetics & dark image
1st trial
Small format CCD
24umx512x512
300e-/pixel/s at -20oC
Prototype
Small format CCD
24umx51512
300e-/pixel/s at -20oC
Large format CCD
15umx2kx4k
2-4e-/pixel/hour at -100oC

48. Quantum efficiency at -100oC

49. Evaluation results
　　・Good Charge Transfer efficiency　　>
　　・Large full-well capacity >150Ke
　　・High charge conversion efficiency 5uV/e
　　・Low dark <5e/pixel/hour at -100℃
　　・Low noise <5e at 130kHz readout,-100℃
　　・High near-infrared QE 　40% at 1000nm
　　　 ・Good surface flatness um
Due to the new process factory of Hamamatsu, the CCD has the good cosmetics. These results are promising for HSC which requires more than 100 CCDs.

50. 10 Billion Pixels CCD Camera
800mm
　Hyper　Suprime Camera
Suprime-Camera

51. Hyper Suprime Camera / Subaru NAOJ
Courtesy to NAOJ