2. Solar Cells need a top side conductor to collect the current generated They also need a conductive film on the backside

3. Conductor Options

4. Silver is the typical choice because it has the top conductivity However, Silver is an expensive conductor

5. Silver is typically printed via a screen printer to keep manufacturing cost low

6. Because of equipment and cost limitations, we will use vacuum deposition processes for our conductor

7. Thin Film Deposition Materials are deposited using a vacuum chamber The vacuum chamber reduces the atmosphere to high vacuum levels (no atmosphere) This reduces contaminating the films, provides a non-contaminating environment free of oxygen, water vapor, etc. and allows materials to melt at lower temperatures.

8. Thin Film Deposition Thin film deposition tools are very complex due to the need to create high vacuum levels. Vacuum levels of 5x10 -7 torr and better are typical. Sea level atmospheric pressure is about 740 torr or 7.4x10 2 Because of their complexity, vacuum chambers are very expensive.

9. Thin Film Deposition To achieve high vacuum levels, several types of vacuum pumps are used. 1. 1.Mid level vacuum levels (2x10 -3 torr) are reached with rotary vane vacuum pumps. These pumps are also know as mechanical or roughing vacuum pumps 2. 2.High level vacuum levels are reached using Diffusion vacuum pumps – requires liquid nitrogen to prevent oil contamination Turbomolecular pumps – like a small jet engine, clean and fast, good for processes that require the introduction of a process gas. Because of the high speed vanes, subject to catastrophic failure Cryogenic vacuum pumps – uses low temperature (10 o K) – also clean and fast pumping but requires regeneration periodically which is time consuming

10. Thin film deposition tools in the ECE Microelectronics Clean Room CVC 601-sputter deposition Varian 3125 e-beam depositionCHA Mark 50 e-beam deposition Cooke-thermal deposition

11. Conductor Deposition The Cooke thermal evaporator is not currently used. The CVC sputter tool is used for aluminum depositions. A silver/antimony and copper targets are available. The Varian 3125 and CHA Mark 50 e-beam deposition tools are used for all other conductors, Cu, Au, Ag, Cr, Ni – –An e-beam evaporates material, it get the material so hot it becomes a gas and evaporates. It then travels in a straight line, because it is under vacuum, until it condenses when it strikes a colder surface

13. With sputtering, an Argon plasma is formed, causing argon ions to strike a metal target and knock loose material. Because an electric field is created, material is deposited on the substrate Material target Argon plasma – ionized argon in an electric field Substrate to be coated

14. E-beam Evaporation uses a high energy electron beam to vaporize (change from a solid to vapor) materials, especially metals

16. Overall view of the Varian 3125 vacuum chamber. This tool deposits thin films using e-beam evaporation

17. Portion of Varian 3125 control rack

18. Varian 3125 quartz heater controller, shutter controller and planetary rotation controller Quartz heater controller E-beam shutter controller

19. Electron beam power supply Typically 6-8KV are required to form the electron beam Electron beam can be steered by magnetic fields

20. Cryopump temperature-must be below 15 o K

21. Varian 3125 ion gauge controller and deposition controller Ion Gauge controller Deposition controller

22. Varian 3125 view of open chamber Wafer planetary – can rotate or stay stationary. Can be removed for loading

23. Varian 3125 4-pocket e-beam crucible

24. With an e-beam (electron beam) evaporator the material is heated to a vapor (gas) and then condenses on cooler surfaces Molten material hot enough to vaporize (become a gas) Electron beam is formed and strikes the metal crucible Substrates (wafers) sit at the top of the chamber

25. Varian 3125 wafer planetary Wafer planetary for Varian 3125

26. Varian 3125 Wafers are held down by spring clips

27. Varian 3126 Quartz Heaters

28. Varian 3125 door showing glass slide holder Glass slide must be replaced before each run

29. Overall view of the CHA Mark 50 vacuum chamber. This tool deposits thin films using e-beam evaporation

30. Inside of CHA Mark 50 chamber showing wafer platen – can be removed from the chamber and replaced with a larger wafer platen

31. CHA Mark 50 wafer adapter ring Adapter rings are available for 2”, 3” and 4” wafers Adapter ring for 4”/100mm wafer

32. CHA Mark 50 4-pocket e-beam crucible Four different materials are available to do sequential evaporations

33. CHA Mark 50 crucible materials and chamber temperature monitor Materials currently inside the 4 pocket crucible are shown with their pocket number Pocket is chosen using this indexer

34. CHA Mark 50 crystal oscillators for evaporation material thickness measurement Crystal oscillators

35. New glass slides must be used for each evaporation

36. CHA Mark 50 cryo-pump control Cryogenic pump temperature – should be around 20 o K

37. CHA Mark 50 vacuum gauge controller Vacuum chamber pressure. Gauge is showing a vacuum pressure of 7.6 x 10 -6 torr. E-beam power supply is interlocked to prevent high voltage if pressure is too high

38. CHA Mark 50 E-beam power supply and controller Power supply is interlocked to prevent activation if vacuum pressure, cooling water, and zero current conditions are not met Power supply main on/off switch High voltage switch and current control

39. E-beam evaporation Crucible being heated by an electron beam

40. Overall view of the CVC vacuum chamber. This tool deposits thin films using “sputtering”

41. Sputter down configurationshown – the CVC inverts this configuration and sputters up

42. CVC sputter tool with chamber lid open Wafers are loaded into position

43. Looking into the CVC sputter tool chamber, showing the 8” aluminum target 8 inch aluminum target Viewport – plasma can be seen here when sputtering

44. CVC sputter tool control racks Chamber vacuum gauge

45. Cryo pump temperature – must be below 15 o K Argon MFC – 30 sccm flow typical

46. CVC sputter tool DC power supply for aluminum target DC Voltage about 4KV DC current 0.5 to 1.0 A

47. CVC sputter tool view port

48. View of argon sputter plasma in CVC sputter tool

49. View of argon plasma in AJA sputter tool Sputter target Shutter Substrate (wafer) stage Wafer stage can rotate and heat

50. Assignment – HW6 Thin film worksheet on web site Due next lecture