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Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh.

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Presentation on theme: "Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh."— Presentation transcript:

1 Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

2 /9 Summary For neural probe samples: -- A new batch of 6 samples, with metal stacking (Ti/Ni/Ti/Ni=30/200/30/50), have been fabricated. These samples were bonded with 70um Si pieces, and were sent back to school for Si thinning. -- The previous batch of samples were processed with Ni dots writing. Even though the sample surface wasn’t clean enough last time, but the Ni dots look ok through microscope. For InGaAs samples: -- The layout of the Ni-InGaAs diffusion fin channels was re-designed, and the EBL writing sequence. -- Three set of new samples were under fabrication, and the 2 nd EBL writing for fin structures has been finished. 2

3 /93 Anneal TempFin WidthTime Sequence 220’C 20nm, 40nm, 60nm, 80nm, 100nm, 150nm, 200nm, 500nm 10min, 20min, 30min, 40min, 60min,80min 250’C (repeat) 5min, 10min, 20min, 40min, 60min, 80min 280’C 2min, 3min, 4min, 5min, 8min, 10min Anneal TempFin WidthTime Sequence 250’C 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm,100nm, 150nm, 200nm, 300nm, 500nm 60min, 90min, 120min, 180min, 240min, 300min 275’C 30min, 40min, 50min, 60min, 90min, 120min 300’C Upon test Annealing modification 280’C TestPryometerTC1TC2 Si holder316280206 SiC holder364280212 Previous test with Si holder: Planned test with SiC holder:

4 /9 Process of Ni-InGaAs Diffusion Study 4 Process 1 st EBL - Markers2 nd EBL – Fin3 rd EBL – Ni Source Only InGaAs & orientations are present in the new design More fin widths are included in one set of fins The EBL writing sequence was also changed

5 475nm286 186 147 95 8981 68 615245 32

6

7 /9 Three Samples in Process 7 Sample 1 -- 8 units, the fin writing was not so good -- will be used for annealing time test Sample 2 -- 8 units, the fin writing was good -- will be used for 250’C annealing study Sample 3 -- 12 units, the fin writing is under process -- will be used for 300’C annealing study

8 /9 Plan 1.Prepare another two set of InGaAs samples -- two InGaAs samples with 8 units, in case of problems during the process -- There two set of samples can be used for 275’C test, and 325’C if both work 2.Carry out the annealing to existing two set of samples -- 250’C and 300’C diffusion study -- SEM, AFM characterization 8

9 /9 Thank you Q&A 9


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