1. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Resist Materials Characterization Work in ExCITe W.-D. Domke; Infineon ExCITe/More Moore Meeting May 12, 2005 Athens, Greece

2. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Status & Plans of Infineon Materials Characterization Bulk EUV litho characterization of relevant resist platforms done model resist formulation (outgassing, scissioning,..) on hold characterization of polymer side reactions finished and reported –correlation of chain scissioning and outgassing in EUV Open frame tool TEUVL available; further plans to be determined

3. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 WP 1: EUV Resist Technology Open Frame Exposures Bulk Litho Characterization of main Resist Classes done (M1.1.5 & M1.1.7): Most investigated chemical platforms are viable for EUV patterning, no clear advantage could be found for either 193nm or 248nm type resists/polymers. Pilot EUV samples (Clariant EXC20 & EXC21; M1.1.6) are available Resolution down to 40nm shown with EUV Interference Lithography

4. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 WP 1: EUV Resist Technology Polymer side reactions J J CH3J CF3 C6H6 C4H8 C4H3 C2H5O CO2 C3H7 CO / C2H4 acrylic resist (ACR-MA) COMA-Si resist ESCAP Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists. 0102030405060 EUV dose 500000 400000 molecular weight 10000 1000 ESCAP acrylic POSS Polymers with high tendency to chain scissioning show the most outgassing

5. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 acrylic model resists show more chain scissioning in EUV compared to even 157nm. ESCAP resist shows dose- dependent scissioning / crosslinking behavior 3rd Int. EUV Symp, Miyazaki & SPIE 2005, San Jose acrylic model resists show more chain scissioning in EUV compared to even 157nm. ESCAP resist shows dose- dependent scissioning / crosslinking behavior 3rd Int. EUV Symp, Miyazaki & SPIE 2005, San Jose WP 1: EUV Resist Technology Polymer side reactions Quantitation of total outgassing [molecules/cm2 sec]