1. EXPERIMENTAL DETAILS 1

2. plasma assisted molecular beam epitaxy (N=1, 2, and 4) of p-GaN/n-GaN junction diodes top and bottom of this structure are both n-type since the tunnel junction eliminates the need for a top p-contact. The device was processed using contact lithography mesa isolation was done using Cl2/BCl3 etching ohmic contacts were made using Al/Au 2

3. As the p-n junction is forward biased, the tunnel junction gets reverse biased electrons of p+GaN layer of the tunnel junction tunnel into empty states available in the n+GaN layer, leaving behind a hole in the p+GaN layer. These electrons and holes regenerated at p+and n+side of the tunnel junctions 3