1. O. Siegmund, UCB, SSL 1 Incom substrate, 33mm diameter, ANL#103 20µm pores, 8 deg bias, 60:1 L/D, 65% OAR Electrode deposited last (on top/bottom) ANL processed for resistive and emissive layer application Annealed 400°C in Ar (residual air, water), causing surface oxidation Resistances vary, 40MΩ on receipt, down to 16 MΩ later, then 360MΩ in vacuum. Single 20µm MCP Phosphor Tests 12/10/2010

2. O. Siegmund, UCB, SSL 2 UV image of #103, 20µm 65% OAR, 8° bias, Photo of #103, 20µm 65% OAR, 8° bias, 60:1 L/D, 60:1 L/D, finished MCP, after ALD coating. 1000v. finished MCP, after ALD coating electrode and annealing. Image features correspond with visible “deposits”. Shows “brush marks” and “deposits”?? ANL processed MCP #103, Imaging #103 from ANL in November 2010

3. O. Siegmund, UCB, SSL 3 MCP 1000v MCP 900v MCP 800v ANL processed MCP #103, Imaging

4. O. Siegmund, UCB, SSL 4 ANL processed MCP #103, Gain No measurable background for MCP #103 Suggestions:- Clean MCP, see if deposits vanish, try again Does ALD get destroyed by Iso/Meth cleaning?