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Instrumental Development in Japan for Future Missions 1.Si strip detectors(GLAST) 2.Supermirror technology 3.New hard-X/  detectors 4.TES calorimeters.

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Presentation on theme: "Instrumental Development in Japan for Future Missions 1.Si strip detectors(GLAST) 2.Supermirror technology 3.New hard-X/  detectors 4.TES calorimeters."— Presentation transcript:

1 Instrumental Development in Japan for Future Missions 1.Si strip detectors(GLAST) 2.Supermirror technology 3.New hard-X/  detectors 4.TES calorimeters 5.Science from NeXT Takaya Ohashi (Tokyo Metropolitan U.)

2 Development of Silicon Strip Detector ( SSD ) 0.01-1mm Position Reso. Good Time Reso. ( a few  s ) Stability/Radiation Hardness confirmed with accelerators. Small number of readout channels compared with pixel detectos Moderate Energy Resolution ~ 1keV ( at 0℃) Thickness: 0.3-0.5mm Team in Hiroshima Univ. has developed SSDs for Astrophysics. 15 cm GLAST-SSD(0.4mmt) Single-Side Strip 0.23mm pitch, 384ch For GLAST, SSD as Tracker of pair produced particles Achieved Large area (6 inch wafer) SSD technology will open a new era of GeV gammay-ray astronomy. Y. Fukazawa, T. Ohsugi et al. (Hiroshima U.)

3 Mass Production is now running (10k SSDs for GLAST). Stable Performance and Low dead channels ( <0.01%) Depletion VoltageLeak Current Double-Side SSD is now under development for Compton Gamma-ray Camera. Good scattering material with good position resolution Fast time resolution (for BGD rejection) Combination with CdTe is a good solution. By Hiroshima U., SLAC, ISAS ( Candidate for NeXT ) 100V 200nA

4 Focal length : 8 m Dia. 40 cm Energy band 20 - 40 keV FOV (fwhm) 9’ Ang. Resol. (HPD) 2’ Development of Hard X-ray Telescope --- Multilayer Supermirror --- Replica foil mirrors and telescope [ InFOCuS-1 ] Eff. Area 50 cm 2 PSF : HPD = 2.1 arcmin Balloon Experiment : InFOCuS, NUSMIT Satellite Mission : NeXT, XEUS K.Yamashita, Y.Tawara, H. Kunieda et al. (Nagoya U., ISAS)

5 NeXT launch 〜 2010 D= 60 cm, f=12 m 6 modules Seff= 1200 cm 2 @40 keV HPD = 15 arcsec(goal) Reflectivity Energy (keV) NeXT Sensitivity 100 ks/5  detection X-ray Reflectivity Pt/C ML Supermirror d=2.4-13 nm

6 ISAS High Z semiconductor (ZCd = 48, ZTe = 52) High density(5.8 g/cm 3 ) Room Temperature Operation (Eg ~ 1.5 eV) High Resolution CdTe Diode by ISAS VA2TA(IDE) CdTe 1cm Applications 1. Focal plane detector of the Hard X-ray Mirror 2. Next Generation Compton Telescope First Prototype (pixel size 625μmx625μm) 400 pixels Cadmium Telluride (CdTe) Diode Detector for Hard X-ray/Gamma-ray Observations T. Takahashi et al. (ISAS)

7 New Gamma-ray Detector for the NeXT   E1 E2 Ein θ Incident angle of  rays is defined by an active collimater - Compton Kinematics - Background events (activation / intrinsic, shield leakage) can be reduced significantly by requiring this relation for E1 and E2. CdTe/Si Strip or Pixel ISAS T.Takahashi et al (ISAS, SLAC, Hiroshima U., U. Tokyo. Osaka U.)

8 Astro-E2 XRS (2005 ~ ) X-ray Spectrometer 1m Large format array of ( ~ 32x32 pixel) TES calorimeter ( ΔE ~ 3 eV) 32 pixel semiconductor- calorimeter array 2.5 mm×5.3 mm (1.9 ’ ×4.1 ’ ) ΔE ~ 10 – 12 eV 3 year life time of coolant TES (Transition Edge Sensor) (Irwin et al. 2000, NIMA 444, 184) Using sharp edge at normal to superconductor transition Higher sensitivity of thermometer Faster response by electro-thermal feedback Development of High Resolution NeXT K. Mitsuda et al. (ISAS, Tokyo Metr. U., )

9 TES calorimeter fabricated by Seiko Instruments Inc. TES Calorimeter Present Performance of 1m 0.5 mm 1.7 mm 0.5 mm TES Si Tc = 105 mK α≡ dlnR/dlnT ~ 100 ~ 100 Mn - K  2 (5.888 keV) K  1 (5.899 keV) 0.5 x 0.5 mm Ti / Au bilayer TES 0.3 x 0.3 mm Au absorber, Ti/Au/Au=40/110/300 nm thick 9.2±0.4 eV Yesterday!

10 Making of Large Format Array Experimental production of mushroom-shaped Sn absorber 500  m 1 mm size 16 x 16 calorimeter array structure Through hole wiring electrodeposit Sn & polish it to 8 μm thick

11 NeXT: Dynamics and Acceleration in the Universe Chandra, XMM.... 1999 Astro-E2.............. 2005 NeXT................. ~2010


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