1. Low-Power SRAM ECE 4332 Fall 2010 Team 2: Yanran Chen Cary Converse Chenqian Gan David Moore

2. Metric Metric = (Active Energy per Access) 2 *Delay*Area*IdlePower Active Energy per Access = 9.704 fJ Delay = 7.186 ns Area = ~1.2 mm 2 Idle Power = 57.78 uW Our Metric = 4.692e-41 J 2 *s*mm 2 *W

3. Metric Breakdown Values 1 Bitcell Area = 0.649 um 2 Read Energy = 9.678 fJ Write Energy = 9.834 fJ Read Delay = 7.186 ns Write Delay = 6.491 ns Idle Power = 57.71 uW o With 0.3 V VDD sleep => 0.483 uW

4. Full SRAM Diagram

5. Memory Block Diagram

6. Special Features Overview Latching Voltage Sense Amplifier Low Voltage (w/ sleep mode) Single Bit Error Correcting Code

7. Latching Voltage Sense Amplifier Minimizes BL sagging to reduce the energy/read Allows faster read Modified from Ryan & Calhoun, 2008

8. Low Voltage Data Retention Voltage: 0.6 V for active operation 0.3 V for sleep mode HOLD butterfly plots at lower voltages indicate data can be retained when sleep voltage is as low as 0.3 V. Sleep VDD 0.35v 0.30v 0.25v

9. Single Bit Error Correcting Code Importance: o Compensate for smaller SNMs due to lower voltage o Maintaining important data Hamming Code: o 6 Parity Bits o 32 Data Bits o Allows correction of 1 error per word, detection of 2 errors per word Process: o Determine parity bits at Write o Correct word at Read

10. Single Bit ECC, continued Requires significant overhead: o Area o Delay o Power Additional components required: o Parity generation/check circuits: XORs o Decoder o Correction circuit: Inverter, 2:1 Multiplexer

11. ECC Diagram Parity Bit Generation (at write) Parity Checking & Correction (at read)

12. Design Considerations Ensure Voltage is high enough to protect data Avoid extreme delay due to low voltage Minimize impact of ECC on area, delay Memory block division

13. Block Size Tradeoff between block complexity and top level complexity Smaller blocks have lower access energy as shown using data from an early model Additional blocks require wider output muxes, more complicated distribution of Input Data Chose to use 16 256x256 blocks - later extended for ECC

14. Layout/ Notes on topology High Vt bitcells to reduce leakage, and require less cell ratio, pull down ratio  reduced area Blocks of memory to decrease WL capacitance

15. 4-Bitcell Array

16. Block Layout (64kb) All Row Periphery, Column Periphery Complete Array consumes majority of area Uses metal4 and lower

17. Sources ECE 4332 2009 Group Projects Pages. UVa ECE Wiki. Kaxiras, S., Zhigang, H., & Martonosi, M. Cache Decay: Exploiting Generational Behavior to Reduce Cache Leakage Power. 9 th International Symposium on Computer Architecture, 2001. Ling, S., Kim, Y. B., & Lombardi, F. A Low-Leakage 9T SRAM Cell for Ultra-Low Power Operation, 2008. Rabaey, J. Digital Integrated Circuits: A Design Perspective. Prentice Hall, 2003. Ryan, J. F., & Calhoun, B. H. Minimizing Offset for Latching Voltage Mode Sense Amplifiers for Sub-Threshold Operation. 9 th International Symposium on Quality Electronic Design, 2008. Wang, A., Calhoun, B. H., & Chandrakasan, A. P. Sub-Threshold Design for Ultra Low-Power Systems. Springer, 2006.