1. 1 Nanoelectronics in Radio- Frequency Technology Peter Russer and Nikolaus Fichtner 學生 : 吳柏宗 授課老師 : 陳文山

2. 2 Introduction Since many nanoelectronic devices exhibit their most interesting properties at radio frequencies from the microwave up into the optical frequency range, nanoelectronics is an enormous challenge for the microwave engineering community. It requires a growing volume of theoretical, modeling and metrology foundations, with the aim to help to bridge the gap between the nanoscience and a new generation of extremely integrated devices, circuits and systems.

3. 3 Figure 1. Moore’s Law and more illustrating the main development trends of miniaturization required for various applications in electronics. (Courtesy ITRS. Used with permission.) 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

4. 4 Graphene Figure 2. Structure of a graphene layer. Figure 3. Schematic of a dual-gate graphene field-effect transistor with a 350 nm gate length and a cutoff frequency of f T = 50 GHz. Figure 4. SEM photograph of a 2 mm 3 12 mm graphene FET. The source-drain spacing is 3 mm and the gate length is 2 mm. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

5. 5 Carbon Nanotubes Figure 5. Measured common-source I-V characteristics of the 2μm × 12μ m graphene FET. Figure 6. Structure of a carbon nanotube. Figure 7. Two-dimensional-graphene sheet to be rolled up to form a carbon nanotube. (a) Represents the circumference line of an armchair carbon nanotube and (b) of a zigzag carbon nanotube. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

6. 6 Carbon Nanotube Capacitors for Energy Storage Figure 8. CNT a distance h over a metallic ground plane. Figure 9. Equivalent circuit model of a CNT over a metallic ground plane. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

7. 7 Carbon Nanotube Transistors for Radio Frequency Applications Figure 10. RF transistor using a parallel aligned array of single-walled CNTs. Figure 11. Single-walled CNT transistors and circuits fabricated on a thin sheet of plastic. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

8. 8 Spintronics Figure 12. Arrangement of the carbon nanotube radio. A CNT is mounted vertically on an electrode and vibrates due to an external RF field. A second electrode collects the electrons emitted from the CNT tip. Figure 13. A spin-based field-effect transistor. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

9. 9 Single-Electron Devices Figure 14. (a) Schematic structure of a single-electron box. (b) Equivalent circuit of a single-electron box. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

10. 10 Memristor Devices Figure 15. Memristor switch. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

11. 11 Light Transport in Nanowires Figure 16. Surface plasmon along a metal- dielectric interface. Figure 17. Plasmonic light transport in a silver nanowire. (a) Injection with focused laser beam at λ = 785 nm. (b) Microscope picture of the 18.6 μm long nanowire. (c) SEM picture of the nanowire end. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

12. 12 The Josephson Effect Figure 18. Schematic representation of a Josephson junction. Figure 19. Josephson junctions: (a) tunnel junction and (b) narrow bridge. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

13. 13 Figure 20. Frequency conversion with Josephson junctions. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

14. 14 Quantum Computing with Josephson Junctions Figure 21. Josephson charge-Qubit. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

15. 15 Quantum Cellular Automata Figure 22. (a) Quantum cellular automata (QCA) unit cell showing the two possible polarizations. (b) QCA universal majority gate and the corresponding truth-table. Figure 23. Processing steps used to fabricate organic thinfilm transistors. 參考資料 :Digital Object Identifier 10.1109/MMM.2010.936077 ﹐ May 2010 ﹐ IEEE Microwave magazine

16. 16 Conclusion In this article we have attempted to give an overview of the impact of nanoelectronics on RF technology. Today the development of nanoelectronics is highly market driven since the push for progress requires tremendous investments. The continuous technological progress in CMOS technology, following Moore’s law and the extensions more and more than certainly offers large room for progress, however, saturation already appears on the horizon. Long-term research and development in direction of novel materials, novel technologies, and novel device concepts is of great importance to maintain the competitiveness of electronics industry. Novel devices based on novel materials and novel technologies will be required to go beyond Moore. Even circuit and system paradigms will change. The next 20 years of development of nanoelectronics will be extremely challenging and will be decisive for the fate of the global players in the field. Although the reflow of investment can be expected only over a long period of time a strong engagement in research and development will be mandatory. 在目前科技任何產品都在創新，尋找新的材料、新的方法，把技術用 在可撓曲基板上，基板重量也能減輕了。