2. Corial 200

3. COSMA Software with:  Edit menu for process recipe edition,  Adjust menu for process optimizing,  Maintenance menus for complete equipment control via internet with VPN (Virtual Private Network). CORS Software for:  Data reprocessing (Measures and data comparison). Equipment Control & Software

4. A Tool Organized in Successive Levels Actions Constructor LotsActions Process Closed-loop Server for GUI COSMA Supervisor Embedded control PU Embedded control function COSMA Controller Process Controller Device Controllers Physical devices Operator Remote GUI PC User Monitoring Monitoring Monitoring

5. Diagram Modes Diagram Modes Stand-byMode Step by step Mode ProductionMode OptimizationMode ConstructorMode Shut down Mode Normal Errors Operator Production Maintenance Constructor

6. A Communicant Tool COSMA Supervisor COSMAGUI Customer Ethernet Network Process Control Unit (1) Process Control Unit (2) Device Control (1) Ethernet Device Control (2) Ethernet WANVPNADSL Fix IP Firewall Dedicated Ethernet network

7. System Reactor TMP RF Generator UHF Generator Cathode Lift Electronic Control TMP Control Magnetron HT/BT Power Supplies Wiring Interface Wiring Interface

8. System TMP Throttle Valve Matching Network Lift Isolator Magnetron Gas box

9. Pumping System Dry Pump ADP 122 TMP TV Reactor Gate valve for quick reactor venting

10.  New microwave (2.45 GHz) plasma source with hot walls to reduce polymer condensation and to enhance plasma cleaning. It produces High Density Plasma in a wide working pressure range (10 to 100 mT) for fast etching of up to Ø200 mm wafers,  Helium assisted heat exchange between cathode, shuttle and wafer or packaged die with mechanical clamping to maintain sample temperature below 100°C, Numerous plasma modes accessible in the same process:  Microwave High Density Plasma + RF biasing  Reactive Ion Etching  Microwave High Density Plasma for silicon thinning. Reactor Features (1)

11.  Reactor with hot walls enables:  Highly selective processes,  Low contamination of the process chamber.  Very low plasma potential (< 2 Volts) and automatic self bias regulation giving rise to precise control of low ion energy levels (< 15 eV),  Enable low damage etching,  Minimal sputtering of metal lines,  Isotropic and anisotropic etching. Reactor Features (2)

12. Electron density : 10 11 to 10 12 e/cm 3 PLASMA Magnetron Coupling Device High Density Plasma Source Microwaves 2.45 GHz

13. HDP Reactor Design Coupling device Reactor Laser window

14. HDP Reactor Design Coupling device Microwave cavity Laser window Gas shower (Thermally isolated) Quartz tube and shielding (Thermally isolated) Reactor walls are thermally isolated. They are getting hot during etching. This enables selective etching of SiO2 against SiN, TiN and polysilicon.

15. Loading Cathode Loading tool Shuttle

16. Loading Cathode Shuttle

17. Clamping Cathode Shuttle

18. Cooling Cathode Shuttle Helium

19. Etching Cathode Shuttle Helium PLASMA

20. End of Etching Loading tool Cathode Shuttle

21. Unloading Cathode Shuttle

22. Unloading Shuttle Cathode

23. Specifications : HDP + RF biasing ProcessUnderlayer Etch Rate (µm/min)Selectivity PolyimideSi3N4SiO2 SiO2 / TiN (*) (High selectivity) Si3N4SiO2SiO2TiN>5031>2030.50.20.05 Some Process Specifications (*) High selectivity requires temperature control of the sample to etch.

24. Control of sample temperature by He cooling:  Prevents metal lines lift-off,  Maintains electrical functionality. Cathode Shuttle Helium Backside Cooling PLASMA

25. Pression He en fonction du débit - He Pressure Versus He Flow Rate - 05101520250 0 5 10 15 0 Débit He - He Flow Rate - (sccm) Pression He (Torrs) Pressure - - He Pressure - He Pressure vs He Flow Rate Work Area Goal: Ensure wafer cooling The shuttles are designed according to wafer size, the shape of packaged dies for optimum process results. The use of dedicated shuttles according to sample to etch facilitates the use of the system. Altymid Ring Wafer O’ Ring Base Plate Graphite Plate Example of Shuttle

26. Shuttle for Packaged Dies Altymid Ring Graphite Cover Packaged Die Bonded With Vacuum Grease on Package Adaptor O’ring Base Plate Goal: Ensure packaged die cooling He Pressure > 80 Torrs with 25 sccm of He flow to ensure good cooling.

27. The latest submicron technology needs precise delayering:  Automatic endpoint detection,  CCD camera with magnification > 120 X,  Laser beam diameter ≤ 20  m. Preventing Overetch A CCD camera and laser diode, in the same measuring head, enables simultaneous visualization of the die surface and the laser beam impact on it. A laser spot, of diameter 20 µm, facilitates the record of interference signals.

28. Interferences lead to a periodic signal having a /2n period versus time Interferences Photodiode Laser Endpoint Detection Reflected beam 1 Interface 1 Underlayer Interface 2 Refractive Index = n Time Signal Laser beam Reflected beam 2

29. Laser Endpoint Detection Al Si3N4 SiO2 Si Laser beam Al SiO2 Si Laser beam Al SiO2 Si Al reflects the laser, there is no interference effect.