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P-N Junctions Physical aspects of pn junctions Mathematical models Depletion capacitance Breakdown characteristics Basis for other devices Circuit Symbol.

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Presentation on theme: "P-N Junctions Physical aspects of pn junctions Mathematical models Depletion capacitance Breakdown characteristics Basis for other devices Circuit Symbol."— Presentation transcript:

1 P-N Junctions Physical aspects of pn junctions Mathematical models Depletion capacitance Breakdown characteristics Basis for other devices Circuit Symbol + V -

2 PHYSICAL ASPECTS OF THE PN JUNCTION

3 P-N Junctions N-type N D P-type N A

4 P-N Junctions N-type N D P-type N A

5 P-N Junctions N-type N D P-type N A Depletion Layer or Region

6 P-N Junctions N-type N D P-type N A Depletion Layer or Region Charge Density qN D -qN A

7 P-N Junctions N-type N D P-type N A Depletion Layer or Region Charge Density qN D -qN A Band Diagram

8 Electrostatics in PN Junction Charge Density qN D -qN A x  Q =  x

9 Electrostatics in PN Junction Charge Density qN D -qN A x x Electric Field Gauss' Law in 1 Dimension: Electric Field =  Q /   Q =  x

10 Electrostatics in PN Junction V bi = Built in Voltage Charge Density qN D -qN A x x x Electric Field Electron Potential Gauss' Law in 1 Dimension: Electric Field =  Q /   Q =  x

11 Why is this the Equilibrium Condition? V bi = built-in voltage = kT ln ( ) NANDNAND ni2ni2

12 Why is this the Equilibrium Condition? V bi = built-in voltage = kT ln ( ) NANDNAND ni2ni2 Too much V bi Too little V bi

13 P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model

14 P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model

15 P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model -0.4-0.3-0.2-0.100.10.20.30.4 0 10 20 30 40 50 60 70 80 90 100 Diode voltage (V) Diode current (nA)

16 P-N Junctions --- Diodes N-type N D P-type N A First-Principles Model

17 Applying Voltage to a Diode - V + FPFP FNFN Forward Bias

18 Applying Voltage to a Diode - V ++ V - FPFP FNFN FNFN FPFP Forward Bias Reverse Bias

19 Capacitance in pn Junctions

20

21 -3-2.5-2-1.5-0.500.5 0 1 1.5 2 2.5 3 3.5 4 4.5 Diode voltage (V) Capacitance (fF) C j0

22 Breakdown Voltage

23 Caused by Avalanche Multiplication Due to reaching a critical electric field


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