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P-n Junction Diode. Basic device technology Structure and principle of operation Electrostatic analysis of a p-n diode –Depletion region and depletion.

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Presentation on theme: "P-n Junction Diode. Basic device technology Structure and principle of operation Electrostatic analysis of a p-n diode –Depletion region and depletion."— Presentation transcript:

1 p-n Junction Diode

2 Basic device technology Structure and principle of operation Electrostatic analysis of a p-n diode –Depletion region and depletion capacitance –Abrupt junction –Linearly graded junction Current - voltage characteristics –Shockley equation –Generation-Recombination Process –High injection –Diffusion capacitance Reverse bias breakdown –Thermal instability –Tunneling effect –Avalanche multiplication Transient behavior

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5 Structure and principle of operation

6 Energy band diagram of a p-n junction (a) before and (b) after merging the n-type and p-type regions

7 Thermal equilibrium

8 Energy band diagram of a p-n junction under reverse and forward bias

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10 General discussion - Poisson's equation Não é trivial de resolver!

11 The full-depletion approximation

12 1. Região de carga espacial 2. Nível de Fermi em equilíbrio 3. Built-in voltage 4. Built-in voltage e densidade de dopantes 5. Largura da região de carga espacial 6. Capacitância de depleção

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14 The linearly graded p-n junction

15 The p-n diode current The ideal diode current

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25 p-n Junction Diode Exemplos e Exercícios

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