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Thermoelectrics of Cu 2 Se: Organic-Inorganic Hybrid Approaches to zT Enhancement David Brown, Tristan Day and Dr. G. Jeffrey Snyder.

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Presentation on theme: "Thermoelectrics of Cu 2 Se: Organic-Inorganic Hybrid Approaches to zT Enhancement David Brown, Tristan Day and Dr. G. Jeffrey Snyder."— Presentation transcript:

1 Thermoelectrics of Cu 2 Se: Organic-Inorganic Hybrid Approaches to zT Enhancement David Brown, Tristan Day and Dr. G. Jeffrey Snyder

2 High Temperature Phase Phonon Liquid (low κ) High ion conductivity Anti-fluorite structure Room Temperature Phase Lower ion conductivity Ion-ordered stucture – Crystallography unresolved Copper(I) Selenide Mixed ion-electron conductor (MIEC) Copper interstitials Obviously there is a phase transition in between. (≈410K) The sub-lattice melts (1 st order transition) The ions disorder (2 nd order transition)

3 Mixed Ion Electron Conductors Materials that conduct both ions and electrons Low thermal conductivities due to unstable structure Separate out ion and electron contributions  Gated Seebeck and hybrid thermoelectrics H. Liu, et al., Nat Mater 11, 422 (2012)

4 Near the Phase Transition 80% increase in thermopower over 40 Kelvin

5 1 st Order Transition i.e. melting Sudden structural transition Enthalpy of formation 1 st order discontinuity 2 nd Order Transition i.e. ferromagnetism “gradual” transformation Critical power law behavior 2 nd order discontinuity 1 st versus 2 nd Order Transitions Plot: Water enthalpy with temperature

6 Critical Scattering Follow critical power laws below the transition Go rapidly to zero Possible critical enhanced scattering Critical Exponent:.80 Critical Exponent:.32

7 Temperature Resolved pXRD Continuous Transformation Observed

8 Heat Capacity DSC Heat CapacityWith PPMS to 400K Continuous “Lambda” Transition

9 Rigid Band Thermopower There is extra thermopower Carrier concentration changes at 360K 360K to 420K  ion ordering range

10 Resulting zT Enhancement Why do Seebeck and zT increase?

11 Thermopower and Entropy S *  Entropy transported per carrier Increase entropy transported  Increased efficiency J i are transport integrals  i.e. Kubo or Boltzmann integral How much does entropy change when a carrier is added? Can we increase it? Quasi-equilibrium term: The “presence” thermopower term

12 Degrees of Freedom Degree of Freedom Entropy per Carrier Scale Configurational≈ 86 uV/Kkbkb Configurational Spin Entropy W. Koshibae et al., Phys Rev B 62 6869 (2000) Degree of Freedom Entropy per Carrier Scale Configurational≈ 86 uV/Kkbkb Spin state[1]≈ 86 uV/Kkbkb Degree of Freedom Entropy per Carrier Scale Configurational ≈ 86 uV/K kbkb Spin state[1] ≈ 86 uV/K kbkb 2 nd order transition 50,000 uV/K 10 J/(mol∙K) Analogously, we suggest that structural entropy of a phase transformation may be coupled to transport in Cu 2 Se.

13 Entropy and Thermopower 6 Near a phase transition: Tc is the critical temperature m is the order parameter Expand the presence term T c depends on copper concentration[1] Copper ions thermally diffuse  ordering component migrates Holes couple to Cu + electrically [1] Z. Vučić, O. Milat, V. Horvatić, and Z. Ogorelec, Phys Rev B 24, 5398 (1981)

14 Organic/Inorganic Hybrids heat Charge transfer to NC film S S2S2 SemiconductorsMetals Carrier concentration DTA of various Cu 2-x Se Organic Ligands Donate charge carriers Dope sample Structure unchanged Z. Vucic and Z. Ogorelec, Philos Mag B 42, 287 (1980)

15 Gated Seebeck Gate T1T1 T2T2 Semiconductor Gate dielectric SourceDrain Degenerate Si with SiO 2 Change carrier concentration Don’t alter structure or chemistry Perfect way to probe this effect

16 Thin Film Cu2Se film thickness: 270 nm roughness average: 2.5 nm root mean square: 3.2 nm 1 inch diameter hot-pressed disk Made at Caltech PLD at 300°C and 10 -6 mBar Danish Technical University

17 Initial Data on Cu 2 Se Initial measurement unstable Behavior atypical of the bulk Electromigration? Soon we will have: PPMS running (DC Hall measurements 4K-400K) Lower current Hall chamber (80K – 450K) Position resolved Seebeck data

18 Conclusions The phase transition enhances the thermopower and zT New method for zT enhancement Study fundamentals of transport Thrust 3: Understand and engineer Gate T1T1 T2T2 Semiconductor Gate dielectric SourceDrain Degenerate Si with SiO 2 heat Charge transfer to NC film

19 Acknowledgments Yunzhong Chen & Nini Pryds Kasper Borup & Bo B. Iversen Huili Liu, Xun Shi & Lidong Chen Alex Z. Williams & NASA JPL Caltech Thermoelectrics Group

20 Seebeck Stability Figure S5. The sample was held at an average temperature of 390 K and a temperature difference of 16 K for 13 hours. The measured thermopower, 152 µV/K, varied by less than 1% during this time period.

21 More Transport Data

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23 Seebeck Methodology


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