1. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Project: IEEE P802.15 Working Group for Wireless Personal Area Networks Submission Title: [Silicon Millimeter Wave Integrated Circuits for Wireless Applications] Date Submitted: [November 15, 2004] Source: [Brian Gaucher] Company [IBM Research] Address [PO 218 Rte 134 MS38-159 Yorktown Heights, NY 10598] Voice: [(914) 945-2596], E-Mail: [bgaucher@us.ibm.com] Re: [ Abstract:[Silicon Millimeter Wave Integrated Circuits for in the 60 GHz band have been built and tested and demonstrate that a potential low cost path exists that may enable consumer level mmWave wireless applications.] Purpose: [Contribution to mmW SG3c at November 2004 plenary in San Antonio] Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein. Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P802.15.

2. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c  Silicon is ready for mmWave frequencies  Millimeter wave applications  Applications  Challenges  Lets look at 60 GHz WLAN as an example  Exemplary silicon circuits  Looking at higher frequencies  Exemplary circuits (VCOs, LNAs, PA’s…)  And what can we expect silicon mmWave ICs to cost ?  Summary and concluding remarks Outline

3. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Evolution of SiGe HBTs  Significant improvement in F t /F max with each generation 199719981999200020012002 2003 CMOS lithography 0.5um 3.3v 0.5/0.35um 3.3, 5v 0.25um 2.5v 0.18um 1.8v 0.13um 1.2v Legend High Speed NPN Ft /Fmax (MAG)/ BVceo Ft/Fmax (Unilateral Gain) 6HP 47/60 GHz/3.3V 7HP 120/100 GHz/1.8V 120/125GHz 8HP 200/180GHz/1.7V 200/250GHz 5HP 50/50 GHz/3.3V 2004 wireless Radar (24 GHz Automotive) Wirleline (40 GbpsOC768) wireless mmWave

4. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Increasing speed of silicon technologies  “…if it can be done in silicon; it will be done in silicon…”  1 & 10 Gbps hardware shipping  1 st publications targeting 40 Gbps  1 st publications targeting 60GHz  Large scale integration  10 & 40 Gbps hardware shipping  1 st designs targeting 80 to100 Gbps  1 st designs targeting mmWave  Medium scale integration  Focus:  on large V swing  High power  Small scale integration

5. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c  Silicon is ready for mmWave frequencies  Millimeter wave applications  Applications  Challenges  Lets look at 60 GHz WLAN as an example  Exemplary silicon circuits  Looking at higher frequencies  Exemplary circuits (VCOs, LNAs, PA’s…)  And what can we expect silicon mmWave ICs to cost ?  Summary and concluding remarks Outline

6. doc.: IEEE 802.15-04-0665-01-003c November 2004 SubmissionB. Gaucher IBM Research IEEE Standards Headed Toward 60GHz? Drivers include: Frequency allocation WW, bandwidth, capacity, power, cost, reliability BT1.0 BT 2.0 60 GHz 802.11n UWB  802.15.3 has the potential to continue the wireless chase, UWB, 60 GHz  WLAN/WPAN may extend its speed advantage 802.11n is addressing this space WLAN may go with 60GHz given it has 5GHz of bandwidth, world wide  Not likely to see real 480-1000Mbps HW until >2006.

7. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Millimeter Wave Applications  802.11x Markets  WLAN  WPAN  Automotive Radar at 77/79 GHz  Telecommunications backhaul  Consumer  Wireless Last Mile …  Military Markets (38, 60, 94 GHz)  Future Combat systems  Secure communications  Satellite Communications  Military phased array markets  Reconfigurable, software definable systems Integrated Wireless Commercial Military Commercial Apps Military Apps

8. doc.: IEEE 802.15-04-0665-01-003c November 2004 SubmissionB. Gaucher IBM Research High-Speed Wireless Need Driven by Consumer Apps  Consumer electronics  Replacement for 1394 Fire Wire and other cables Potential for 150M consumer electronic devices, such as TVs, home automation camera/camcorder, game consoles, music players etc. by 2009.  Computer & peripherals  Replacement for USB, monitor cable, parallel ports and other cables – Potential for 100M computers and peripherals by 2009.  Other application needs outside home  Healthcare, SOHO, industrial control, wireless sensor network, smartphones, last mile access, positioning & measurements (asset management), radar… Consumer electronic applications Computer applications Low power, short range 100-500Mbps link

9. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Key Challenges for Silicon Millimeter-Wave Circuits  Lossy silicon substrate  poor isolation, lower Q components.  Need for a predictive design kit such that 1 st pass success is achievable.  Accurate transmission line and transistor models.  Accurate parasitic extraction (distinction between device and parasitic blurred).  Silicon CAD tools (e.g. Cadence with EM simulation).  Need to yield circuits in the silicon environment  density requirements on metal, poly, and active layers. Effect on RF performance of passives?  Achieving very high levels of integration in silicon while maintaining MMW functionality.

10. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c The Challenges of Test: On-Wafer mmWave Circuit Measurements Noise Characterization (50-75GHz, 75-90GHz): Power Characterization (50-75GHz, 75-90GHz): S-Parameters (40MHz to 110GHz): MMW modules diplexers 110GHz VNA system Challenges at MMW frequencies: - on-wafer characterization - cable losses - differential measurements Noise Source Low Noise Downconverter Output Balun Input Balun To VNA From VNA to Noise Figure Meter

11. doc.: IEEE 802.15-04-0665-01-003c November 2004 SubmissionB. Gaucher IBM Research 60GHz Link Budget ParameterValue Tx power at antenna+17dBm Tx antenna gain+6dBi Person penetration loss (OLOS only)20dB Polarization loss3dB Rx antenna gain+6dBi Rx noise figure at antenna8dB ModulationQPSK Spectral efficiency0.25bps/Hz Channel codingReed Solomon Es/No 1dB (~1e-5 BLER) Receiver implementation loss1dB Carrier59GHz-64GHz 1Gbps@3M 1Gbps@20M LOS: line-of sight OLOS: obstructed (by person) LOS

12. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c An Example of a Conventional Architecture Using SiGe ÷N÷N Gain=17dB NF=4 dB 90° LNA Pre-Amp x3 P O =+10dBm + 90° PA ÷2÷2 500MHz Direct-Convert Rx Heterodyne Tx ÷N÷N Gain=16dB NF=15dB Gain=33dB, NF=6dB VCO 500MHz  Key Building Block Circuits  Low-Noise Amplifiers  Mixers  Voltage- Controlled Oscillators  Power Amplifiers Circuits built & tested

13. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c -102dBc/Hz @ 1MHz Key 60 GHz Circuits Already Built and Tested: I cc = 6 mA V cc = 1.8 V NF (at 60GHz) = 3.3-3.7 dB NF (at 63 GHz) =4.2-4.6 dB Mean NF = 3.7 dB VCO Meas’d performance -102 dBc/Hz @ 1MHz 8mA at 3V P out -11 dBm Output Spectrum / Phase Noise  First Gilbert-cell mixers at 60 GHz.  Highest integration level for any technology at 60 GHz.  80 transistors  43 transmission lines or inductors  Meas’d performance comparable or exceeding GaAs  NF (< 15 dB),  conversion gain (> 16 dB),  Vcc = 2.7V  power (150 mW “core”) Low Noise Amplifier Voltage Controlled Oscillator Direct Conversion Mixer  Gain = 10.8 dB  P1 dB = 11.2 dBm  Psat = 16.2 dBm  130 mA at 2.5V Power Amplifier ISSCC 2004

14. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c World’s first 60GHz silicon direct down conversion mixer  First Gilbert-cell mixers at 60 GHz.  Highest reported integration level for any technology at 60 GHz.  80 transistors  43 transmission lines or inductors  Performance comparable or exceeding GaAs  NF (< 15 dB),  conversion gain (> 16 dB),  power (150 mW “core”) 1.9mm x 1.65mm

15. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c What are the next steps ?  Make mmWave components look to users just like other low frequency semiconductor components  Broaden the number of potential users worldwide  A new generation of mmWave applications  Demonstrating  Monolithic Tx chip and  Monolithic Rx chip  Low cost package which does not require end users to have sophisticated mmWave test and packaging skills  Plastic package  Chip  Antenna

16. doc.: IEEE 802.15-04-0665-01-003c November 2004 SubmissionB. Gaucher IBM Research 60-GHz Receiver and Transmitter ÷2÷2 x3 IF Amp IF Mixer BB Amp I Q Image-reject LNA Input 59-64 GHz Receiver ÷2÷2 x3 IF Amp IF Mixer I Q Image-reject Driver Output 59-64 GHz PA Transmitter Baseband DAC ADC PFDCP LPF ÷ 32 PLL

17. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Summary of Transceiver Specifications. TargetSimulated RF frequency range59GHz-64GHz IQ balance+-2 degrees, 1dBTBD Rx image suppression20dB25-30 dB Tx carrier suppression25-30dBcTBD Tx image suppression20dB25-30 dB Rx noise figure (at LNA)<6dB5.5-7.5 dB Rx P1dB (LNA on/off)-30dBm / -15dBm-27dBm from LNA -31 dBm for whole RX Output power (P1dB at PA)>10dBm16dBm w/ PA 8-10 dBm w/ Driver Phase noise (incl. tripler)-88dBc/1MHz -120dBc Noise floor -92 dBc/1MHz (VCO only at 3XVCO) TBD after tripler Power consumption-RX: 330 mW (inc. PLL) TX: 430 mW (inc. PLL) PA: 360 mW

18. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c 60-GHz Transmitter Layout Size: 4.0 x 1.5 mm 2 Out Baseband Inputs Driver Amp PLL Mixer & IFVGA Tripler IF Mix PA IN Baseband Outputs RCLK LNA PLL Mixer & IFVGA Tripler IF Mix BB Amp Size: 3.4 x 1.6 mm 2 60-GHz Receiver Layout

19. doc.: IEEE 802.15-04-0665-01-003c November 2004 SubmissionB. Gaucher IBM Research Concept of Fully Integrated mmWave Transceiver small wave length (e.g. ~ 5mm @ 60GHz)  antenna in package  no MMW signal off or on package IBM SiGe technology with >200GHz f T /f max  highly integrated silicon based MMW transceiver ICs low-cost package including fully integrated MMW transceiver and antennas Quarter Sized Transceiver

20. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c  Silicon is ready for mmWave frequencies  Millimeter wave applications  Applications  Challenges  Lets look at 60 GHz WLAN as an example  Exemplary silicon circuits  Looking at higher frequencies  Exemplary circuits (VCOs, LNAs, PA’s…)  And what can we expect silicon mmWave ICs to cost ?  Summary and concluding remarks Outline

21. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c …and what can we expect silicon mmWave ICs to cost ?  Keys to driving cost…look at 802.11x WLANs as an example  Establishing an industry standard (802.11b)  Generating volumes: Chip sets “everywhere” (PCs, enterprise & SOHO access points, adaptor cards, etc….)  “riding” the silicon cost curve Silicon integration (1 st in SiGe, then in CMOS) SiGe integration & volumes CMOS integration & volumes  Mmwave ICs in SiGe can be expected to follow similar historical trends ! (chip set includes RF transceiver, PA, BB, MAC)

22. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c  Silicon is ready for mmWave frequencies  Millimeter wave applications  Applications  Challenges  Lets look at 60 GHz WLAN as an example  Exemplary silicon circuits  Looking at higher frequencies  Exemplary circuits (VCOs, LNAs, PA’s…)  And what can we expect silicon mmWave ICs to cost ?  Summary and concluding remarks Outline

23. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c ….this is only the beginning !  New transistors and passives open up bands to 150 GHz !  Imaging  Wireless measurements  ???? 199719981999200020012002 2003 CMOS lithography 0.5um 3.3v 0.5/0.35um 3.3, 5v 0.25um 2.5v 0.18um 1.8v 0.13um 1.2v Legend High Speed NPN Ft /Fmax (MAG)/ BVceo Ft/Fmax (Unilateral Gain) 6HP 47/60 GHz/3.3V 7HP 120/100 GHz/1.8V 120/125GHz 8HP 200/180GHz/1.7V 200/250GHz Next Gen Target 300GHz/TBD 5HP 50/50 GHz/3.3V 2004 wireless Radar (24 GHz Automotive) Wirleline (40 GbpsOC768) wireless mmWave Quasi-optical Band

24. SubmissionB. Gaucher IBM Research November 2004 doc.: IEEE 802.15-04-0665-01-003c Summary & concluding remarks  “…anything that can be done in silicon; will be done in silicon…”  SiGe enables low power & high level integration not possible in III-V technologies  We have demonstrated key mmWave building block circuits in SiGe with performance suitable for enabling the 60 GHz ISM band highest integration direct-conversion mixer high performance V-band LNAs power amplifiers  Historical silicon “take down” curves suggest attractive costs for mmWave transceivers based on Silicon integration volume growth  We are witnessing the rebirth and renaissance of millimeter wave technology and applications enabled by a new generation of silicon Thank you !