1. FP7-ICT-2007-2 HELIOS Large-scale Integrating Project Large-scale integrating project (IP) ICT Call 2 FP7-ICT-2007-2 pHotonics ELectronics functional Integration on CMOS HELIOS Date of preparation: 09.10.2007 Type of funding scheme: Large-scale integrating project (IP) Work programme topics addressed: ICT-2007.3.5: Photonic components and subsystems Name of the coordinating person: Laurent Fulbert e-mail: Laurent.fulbert@cea.fr Objectives: to build a complete design and fabrication chain enabling the integration of a photonic layer with a CMOS circuit, using microelectronics fabrication processes. It will make accessible integration technologies for a broad circle of users in a foundry-like, fabless way

2. –Demonstrating the power of this approach through demonstrators addressing different industrial needs –Preparing the future by exploring alternative approaches that offer clear advantages in terms of integration on CMOS. WP12: training and dissemination WP12: training and dissemination WP8: Modulator demonstrator WP8: Modulator demonstrator WP0 : Project management WP0 : Project management WP1: Roadmappingandexploitation WP1: Roadmappingandexploitation WP7: integration with CMOS WP2: source WP2: source WP3: modulator WP3: modulator WP4: passive circuitry WP4: passive circuitry WP5: photodetection WP5: photodetection WP6: packaging WP6: packaging WP9: Transceiver demonstrator WP9: Transceiver demonstrator WP11: innovative proof of concept WP11: innovative proof of concept WP10: PhotonicQAM Wireless transmission demonstrator WP10: PhotonicQAM Wireless transmission demonstrator photonics/electronics convergence at the process level and design level Different activities: –Developing the whole food chain high performance generic building blocks

4. Task 11.1 Amorphous Si modulator (IMM) Exploit amorphous silicon (a-Si:H) as a material to form a modulator to be fabricated at the end of the CMOS process. We plan to design, fabricate and characterise field-effect driven elements. The proposed basic technology is shown, with possible changes in the cladding layer. The proposed stacked modulator scheme highly enhances the electro-optical effects in the region where they are more effective on the propagating beam. WP11: INNOVATIVE PROOF OF CONCEPTS (CNRS)

5. -Task 11.2: Silicon nanocrystals for light emission and amplification (UNITN) Realize an injection silicon laser based on active Er impurities which are excited via electrical injection into Si-nc embedded in a dielectric (oxide, nitride) 1. LED with Si-nc emitting at 0.75 μm with EQE of about 1% and a turn on voltage of less than 5V 2. LED with Er coupled to Si-nc emitting at 1.55 μm with same EQE and turn on voltage 3. Waveguide amplifiers with Er coupled to Si-nc, electrically driven and having a gain of 10 dB 4. Injection silicon laser emitting at 1.55 μm

6. Task 11.3 Novel concepts of heterogeneous integration (CNRS) This task will concentrate on the development of an innovative technological/conceptual scheme for 3D microphotonics on CMOS based on III-V/Silicon heterogeneous integration and diffractive photonics and opens the way to far larger functionality and wider potential impact than in the version of INTEL/PICMOS

7. IMM funding: Uni-RC IMM-BO IMM-Na RTD (A) [75%]: personnel, other direct costs [project specific materials needed for cleanroom, silicon substrates, process gases, chemicals, targets, consumables for polishing: 30k; parts needed for demonstrators (photomasks, fibers, glues): 5 k; travels: 10k] OTHER (D) [100%]: networking, organisation, dissemination (publications, participation to seminars, training) (indirect costs: 86,96% of personnel cost) Project duration: 48 months

8. Tre strati Barriera: aSiCN 29 nm Cladding: nitruro simmetrico Barriera: aSiCN 30 nm Cladding: nitruro 1.5 micron 1 micron 3 strati Barriera: aSiCN 30 nm Cladding: nitruro Ultima barriera: aSiCN 1 micron 6 strati Barriera: aSiCN 38 nm Cladding: nitruro Ultima barriera: aSiCN 0.5 micron 6 strati SOTTILE: guide 0.2 micron, totale 1.2 micron Barriera: aSiCN 38 nm Cladding: nitruro Ultima barriera: aSiCN 0.2 micron 2 strati, ultra SOTTILE: guide 0.125 micron, totale 0.25 micron Barriera: aSiCN 40 nm Cladding: nitruro Ultima barriera: aSiCN 5 strati DROGATO: guide 0.25 micron, totale 1.25 micron Barriera: aSiC 40 nm Cladding: 1.1 micron SiO 2 Ultima barriera: SI Contatto ZnO 5 strati intrinseco in MDZ3: guide 0.25 micron, totale 1.25 micron Barriera: aSiC 40 nm Cladding: 1.1 micron SiO 2 Ultima barriera: SI Contatto ZnO ZnO c-Si tipo p c-Si tipo n ZnO c-Si tipo p c-Si tipo n

9. Segnale elettrico modulante Segnale ottico in uscita dalla guida

11. 6 strati SOTTILE: guide 0.2 micron, totale 1.2 micron Barriera: aSiCN 38 nm Cladding: nitruro Ultima barriera: aSiCN 0.2 micron

13. ZnO

14. 0.2 micron ITO

15. 14167 a-Si:H 1.204 m SiO 2 R (%) 265 nm roughness 16211 A a-Si:H 663 A ITO2 3120 A SiO 2 R (%)

16. 0.2 micron ITO Spin-on-Glass

17. The following activities were performed study and optimisation of the films: a-Si:H, Si x N 1-x, a-SiC:H, a-SiCN films deposited and characterised, each in different stoichiometric compositions outcome: a-SiC:H will be used as insulator in future devices EXPERIMENTAL ACTIVITY electrical characterisationoptical characterisation

18. speed issues speed depends on =R C, where R resistivity of a-Si:H C doping has a key role log (time,s) log(electron, cm -3 ) simulated elec. conc. vs. time at the internal a-Si:H/insulator interfaces for different conductivities of a-Si:H t SiC (undoped)

19. Drogaggio Aumenta la velocità Aumenta lassorbimento 80 sccm SiH 4 0.9 sccm PH 3 Ea = 0.16 eV D = 5.6 E-3 ( cm) -1 Simulazione nir: =30° K IR inferiore a 0.001

20. V aumenta Red shift: aumenta nd Wavelength (nm) Misure ellissometro su modulatore polarizzato

21. Meeting annuale: 16 giugno GRAZ