1. Measurement at -5 and -10 C Leakage current and depletion voltage of the irradiated chips were measured at -5 C and -10 C

2. Pixel 46 Design A Fluence -1x10 14

3. Pixel 44 Design A Fluence -6x10 14

4. Comparison

5. This indicates that the current is coming from diode (pixels). Current compliance was 1mA Extra Current

6. Pixel 7 - Depletion Voltage Design A Fluence -1x10 14 Full Depletion at 33 V

7. Summary Pixel arrays 7,39,42,46, which were exposed to a fluence of 1x10 14 p/c.m. 2, deplete around 35 volts. At -10 0 C average leakage current at depletion voltage is 0.71  A (1.1nA/pixel). At -10 0 C leakage current per pixel reaches 10nA at 340V, 322V, 402V and 392V for pixel arrays 7,39,42 and 46 respectively. We could not measure depletion voltage for the pixel array 44 which was exposed to fluence of 6x10 14 p/c.m. 2. At -10 0 C leakage current per pixel reaches 10nA at 298V for pixel array 44. We plan to bump bond this pixel arrays to chip and to measure them with source.