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Si x Ge 1-x and Si x Ge 1-x O y Films as a Thermal Sensing Material Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering Dept. Arlington, TX Based in part by work supported by the National Science Foundation ECS

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Si x Ge 1-x and Si x Ge 1-x O y Films as Sensing Material Both Si x Ge 1-x and Si x Ge 1-x O y are conventional semiconductors High TCR (~-5%/K) can be obtained with moderate resistivity value (~10 4 ohm-cm) from a suitable combination of Si x Ge 1-x O y Iborra et. al (2002) reported a TCR of -4.21%/K from RF Sputtered Si x Ge 1-x O y García et. al (2004) reported a TCR of -5.1%/K from PECVD a-Si 1-x Ge x :H,F.

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Deposition: Si x Ge 1-x and Si x Ge 1-x O y Films Cosputtering from Ge + Si regions target. RF magnetron Sputtering at 160 W and 10 mTorr pressure. Si x Ge 1-x deposited in Ar environment. Si x Ge 1-x O y deposited in Ar:O environment.

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Resistivity: Si x Ge 1-x

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TCR and Activation Energy (Ea)

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TCR and Activation Energy: Si x Ge 1-x

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Optical Bandgap: Si x Ge 1-x

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Resistivity: Si x Ge 1-x O y

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Activation Energy: Si x Ge 1-x O y

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TCR: Si x Ge 1-x O y

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Noise PSD: Si 0.15 Ge 0.85 O 1.79 μA Bias Current

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Transmittance: Si 0.15 Ge 0.85 O y

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Optical Bandgap: Si x Ge 1-x O y

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X-ray Diffraction (XRD) Pattern for Si Ge O 0.039

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Energy Dispersive X-Ray Analysis of Si Ge O Film By Scanning Electron Microscope (SEM)

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Transmittance: Si x Ge 1-x

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Transmittance: Glass Substrate used for Depositing Si x Ge 1-x O y and Si x Ge 1-x Thin Films

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Si x Ge 1-x O y and Si x Ge 1-x : Normalized Hoogie Coefficient for 1/f-noise (α H /N) determined at 10 Hz frequency and other properties SAMPLENormalized Hooge parameter α H /N TCR (%/K) Activation Energy (E a ) (eV) Optical Bandgap (E g ) (eV) Si 0.15 Ge × Si Ge O × Si Ge O × Si Ge O < 2.58 × 10 -8* Si Ge O < 2.35 × 10 -6* Si Ge O < 4.06 × 10 -3* Si Ge × Si Ge O × Si Ge O < 4.17 × 10 -4* Si Ge O < 3.62 × 10 -4* Si Ge < 5.08 × * Si Ge O × Si Ge O < 4.19 × 10 -9* Si Ge O < 3.36 × 10 -7* Si Ge O < 1.30 × 10 -4* Ge2.07 ×

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