1. November 25th, 20021 Run IIB Silicon workshop Purdue University Bortoletto Daniela, Bolla Gino, Canepa Anadi, Roy Amit Hamamatsu testing I-V characteristics up to 1000V Depletion Voltage Coupling Capacitance short at 100V Leaky strip Polysilicon Resistor Sensors received at Purdue: SWA 61457 60 SWA 61457 61 SWA 61457 63 SWA 61457 69

2. November 25th, 20022 Run IIB Silicon workshop Purdue Testing results at www.physics.purdue.edu/cdf/RunIIB/pres sensor characterization I-V characteristics up to 1000V Depletion Voltage Coupling Capacitance & Oxide Leakage Current Polysilicon Resistor Interstrip Capacitance Radiation Hardness Test sensor SWA61457 60 sensor SWA61457 63 sensor SWA61457 69 have been irradiated at U.C.Davies facility fluence = 1.4 10 14 1MeV eq-n cm -2 fully characterizated

3. November 25th, 20023 Run IIB Siliconworkshop Run IIB Silicon workshop Sensor 61 (bonding problems) I (V=150) =120nA hamamatsu I(150)=71 nA Sensor 60 I (120V) =62.6nA hamamatsu I(120V)=77.3nA Sensor 69 I (140V) =76.8nA hamamatsu I(140V)=81.3nA Sensor 63 I (V=140)=71nA hamamatsu I(140)=74.3nA

4. November 25th, 20024 Run IIB Siliconworkshop Run IIB Silicon workshop Neutron irradiation fluence 1.4 10 14 1MeV n-eq cm^ -2 Layer 0 Operating temperature T = -5C (TDR 3-16) Leakage current per strip module I strip (V > V d )  95 nA

5. November 25th, 20025 Run IIB Siliconworkshop Run IIB Silicon workshop Annealing procedure on sensor 69 4min @ T=80C Both sensor 60 and sensor 69 I(plateau)  50uA (T = -25C) sensor 60:1400 min at T=20C sensor 69: 800 min at T = 20C & annealing Assuming  =4  10 -17 A/cm  I(V dep )  7mA Measured value  I(V dep )  5.5mA Estimated Fluence = 1.1 10 14 1MeV n-eq Before Irradiation breakdown voltage =181V

6. November 25th, 20026 Run IIB Siliconworkshop Run IIB Silicon workshop Sensor 60 Vdep=117 V hamamatsu Vdep=140V Sensor 61 Vdep=141 V hamamatsu Vdep=160V Sensor 63 Vdep=133 V hamamatsu Vdep=160V Sensor 69 Vdep=132 V hamamatsu Vdep=150V

7. November 25th, 20027 Run IIB Siliconworkshop Run IIB Silicon workshop ROSE/TN/2000-10 Version 1/14.12/2000 V d (20C)=V d (T)*1.0526/[1+A·exp(T/  )] A=0.00936  = 11.58 V d (f)=V d (1kHz)[1-D·log(f/1kHz)] D=0.11+/-0.009 After irradiation Sensor 60 T=-25C,f=1kHz V dep =137 V T=20C,f=10kHz V dep =128 V

8. November 25th, 20028 Run IIB Siliconworkshop Run IIB Silicon workshop After irradiation & after annealing Sensor 69 to be understood After irradiation Sensor 69 V dep (T=20C,f=100kHz) =136 V V dep (T=20C,f=10kHz) =119 V

9. November 25th, 20029 Run IIB Siliconworkshop Run IIB Silicon workshop Sensor 60 Coupling Capacitance CC(100Hz)= 134.43+/- 0.48pF Sensor 63 Coupling Capacitance CC(100Hz)= 125.32+/- 1.99pF Sensor 690 Coupling Capacitance CC(100Hz)= 126.49+/- 0.97pF Open in the metal ?

10. November 25th, 200210 Run IIB Siliconworkshop Run IIB Silicon workshop Sensor 60 Coupling Capacitance CC(100Hz)= 136.34+/- 1.17pF Sensor 69 Coupling Capacitance CC(100Hz)= 134.47+/- 5.34pF

11. November 25th, 200211 Run IIB Siliconworkshop Run IIB Silicon workshop Sensor 60 Interstrip Capacitance Ci(1MHz)= 3.46+/- 1.68pF Sensor 63 Interstrip Capacitance Ci(1MHz)= 3.17+/- 0.01pF Sensor 69 Interstrip Capacitance Ci(1MHz)= 3.53+/- 0.18pF Trend to be understood ?

12. November 25th, 200212 Run IIB Siliconworkshop Run IIB Silicon workshop Sensor 63 Interstrip Capacitance Ci(1MHz)= 3.39+/- 0.07pF Sensor 60 Interstrip Capacitance Ci(1MHz)= 3.43+/- 0.08pF

13. November 25th, 200213 Run IIB Siliconworkshop Run IIB Silicon workshop

14. November 25th, 200214 Run IIB Siliconworkshop Run IIB Silicon workshop

15. November 25th, 200215 Run IIB Siliconworkshop Run IIB Silicon workshop Before Irradiation Sensor 60 R=1.72 +/- 0.2 MOhm Sensor 63 R=1.84 +/- 0.8 Mohm drop to be understood charge up ? After Irradiation Sensor 63 R=1.64 +/- 0.04 MOhm Sensor 63 R=1.7 +/- 0.8 Mohm

16. November 25th, 200216 Run IIB Siliconworkshop Run IIB Silicon workshop Before Irradiation R=1.86 MOhm After Irradiation R=1.71 MOhm

17. November 25th, 200217 Run IIB Siliconworkshop Run IIB Silicon workshop Conclusions We have evaluated the performance of Axial Outer Layer The sensors fulfill the specifications: Leakage Current as Small as expected Bad channel Not found Capacitance Values as Expected Bias Resistor as Expected Full Dep Voltage after Irradiation as Expected NEED to be understood: 1)Before Irradiation, Bias Resistance drop : Charge up ? 2)After Irradiation, Interstrip Capacitance bump : related to Bias Resistor ? 3)After Irradiation & After annealing, Total Capacitance increase at V>V dep