1. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. X-ray diffraction (XRD) 2θ-ω scans around (00·2) reflection for InxGa1−xN layers grown on a GaN buffer layer on (0001) sapphire with different In mole fraction, xIn. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

2. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Indium mole fraction, xIn as a function of growth temperature at different TMIn flow rates. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

3. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Change in the full-width at half maximum (FWHM) of the peaks with In mole fraction, xIn for XRD ω scan InGaN (002) reflections and 300 K photoluminescence (PL) spectra. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

4. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Microscopic surface morphology (4×4 μm2) measured by atomic force microscopy (AFM) for InxGa1−xN layers grown at (a) 760°C, (b) 720°C, (c) 680°C, and (d) 640°C. The height scale is 10 nm for all the images. The surface root mean square (RMS) roughness values for (a), (b), (c), and (d) are ∼ 0.7, ∼ 1.6, ∼ 3.4, and ∼ 5.6 nm, respectively. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

5. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. (a) 300 K PL and (b) absorbance spectra for InxGa1−xN layers with different In mole fractions, xIn. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

6. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. 300 K PL, absorbance, and derivative of absorbance for an InGaN layer with an In mole fraction, xIn≈0.176. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

7. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Dependence of absorption edge (Eg) and 300 K PL peak energy on In mole fraction, xIn. The dashed line is from Ref. 18. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

8. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. 300 K PL spectra for InxGa1−xN layers grown at 720°C with different TMIn flow rates. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

9. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. Microscopic surface morphology (4×4 μm2) measured by AFM for InxGa1−xN layers grown at 720°C with TMIn flow rates of (a) 30 sccm, (b) 120 sccm, and (c) 200 sccm. The height scale is 15 nm for all the images. The surface RMS roughness values from (a), (b), and (c) are ∼ 8.0, ∼ 1.6, and ∼ 0.6 nm, respectively. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

10. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. (a) XRD 2θ-ω scans around (002) reflection and (b) PL spectra for InxGa1−xN layers grown at 680°C with different TEGa flow rates. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501

11. Date of download: 7/6/2016 Copyright © 2016 SPIE. All rights reserved. In mole fraction, xIn and macroscopic phase separation as a function of growth rate. Figure Legend: From: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications J. Photon. Energy. 2012;2(1):028501-1-028501-10. doi:10.1117/1.JPE.2.028501