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Nanoelectronics by Quantum Mechanics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong Microtherm 2013 Microtechnology-Thermal Problems in Electronics.

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Presentation on theme: "Nanoelectronics by Quantum Mechanics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong Microtherm 2013 Microtechnology-Thermal Problems in Electronics."— Presentation transcript:

1 Nanoelectronics by Quantum Mechanics Thomas Prevenslik QED Radiations Discovery Bay, Hong Kong Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland 1

2 Today, Fourier’s equation based on classical physics is routinely applied to heat transfer in nanoelectronics - resistors, capacitors, and inductors - having submicron dimensions. However, unphysical results are found. Spin-Valves GMR changes by electron-spin (Slonczewski– IBM) Memristors require oxygen vacancies ( Williams – Hewlett Packard ) 1/f noise is created by free electron collisions with lattice ( Hooge – Philips Research ) [1] L. O. Chua, “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, pp. 507–519, 1971. Introduction 2 Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland

3 Proposal Heat transfer in nanoelectronics is a QM effect that conserves Joule heat by creating QED induced radiation that spontaneously form excitons (hole and electron pairs) instead of increasing temperature. QM = Quantum Mechanics QED = Quantum electrodynamics In the electric field across the circuit element, holes separate from electrons The holes and electrons are charge carriers or upon recombination emit EM radiation. EM = Electromagnetic Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland 3

4 Theory Heat Capacity of the Atom Conservation of Energy TIR Confinement Excitons and QED Radiation Nanoelectronics QED Induced Heat Transfer 4

5 Heat Capacity of the Atom 5 Nanoelectronics kT 0.0258 eV Classical Physics (kT > 0) QM (kT = 0) Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland In nanoelectronics, QM requires atoms to have zero heat capacity

6 Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland Conservation of Energy Lack of heat capacity by QM precludes Joule heat conservation in nanoelectroncs by an increase in temperature, but how does conservation proceed? Proposal Absorbed EM energy is conserved by creating QED radiation or excitons inside the circuit element - by frequency up - conversion to the TIR frequency of the circuit element. TIR = Total Internal Reflection 6

7 Since the refractive index of nanoelectroncs is > surroundings, the QED radiation is confined by TIR Circuit elements ( films, wires, etc) have high surface to volume ratio, but why important? By QM, EM energy absorbed in the surface of circuit elements provides the TIR confinement of QED induced radiation. QED radiation spontaneously creates excitons from Joule heat dissipated in nanoelectronics. Simply put, f = (c/n) / and E = hf TIR Confinement 7 Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland For thin film circuit elements having thickness d, = 2d

8 Excitons are created as QED radiation removes an electron from the valence to the conduction band. A positive charged hole is left in the valence band, the combination of the hole and the electron called an exciton. Upon recombination, EM radiation is emitted. Before Before recombination, an external electrical field separates the hole and electron, the charges moving to opposite polarity voltage terminals Excitons and QED Radiation Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland 8

9 The excitons (hole and electron pairs) are charge carriers that increase the electrical conductivity of circuit elements and reduce resistance allowing data storage in electronic recording as in magnetic heads Removal of an electron by QED radiation creates an unbalanced positive hole charge that is free to move through the lattice of the circuit element. By hole theory, the holes are assumed to have mobility by hopping through the circuit element Nanoelectronics Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland 9

10 QED Heat Transfer 10 QED Radiation Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland Phonons Q cond Charge EM Radiation Excitons Substrate Circuit Element

11 Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland Response QED Radiation and Excitons Exciton Dynamics Resistance and Current 11

12 QED Radiation and Excitons Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland QED Radiation Rate P = Joule heat E = QED Radiation energy  = Fraction absorbed in Element (1-  ) = Fraction loss to Surroundings Exciton Rate Y = Yield of Excitons / QED Radiation 12

13 Exciton Dynamics Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland Where, Q E and Q H are number electrons and holes, V is the voltage  E and  H are electron and hole mobility Electrons Holes 13 For Spin-Valves and 1/f Noise, V = V o, For memristors, V = V o sin  t.

14 Resistance and Current Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland  = Conductivity  = Resistivity 14

15 Applications Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland Spin-valves Memristors 1/f Noise 15

16 Spin-Valves Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland QED induced charge reduces GMR ( Electron Spin insignificant ) 16 Alq3 Ro = 1 M 

17 Memristors Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland d = 50 nm, GST mobility  H = 2x10 -6 cm 2 /V-s 17 QED induced Charge reduces Memristor resistance ( HP claims Oxygen vacancies )

18 1/f Noise in Nanowires Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland 18 SnO 2 NWs d = 50 nm  H = 172 cm 2 /V-s

19 1/f Noise in Nanowires Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland Step in QED charge  Step in Current  Step in Power Fourier Transform of Step in Power gives 1/f Noise 19 The Fourier Transform of a step change in time may also explain 1/f noise in music and stock market prices 0 X(t) t 

20 1/f QED Spectrum in NW Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland QED creates holes as current enters nanowire ( Hooge relation based on free electrons ) 20

21 By QM, submicron nanoelectronic circuit elements and interconnects do not increase in temperature because Joule heat is conserved by the creation of charge. QED induced charge supersedes:  Electron-spin as the GMR mechanism in spin-valves  Oxygen vacancies in memristors  The Hooge relation in 1/f noise Provided the nanoelectronics is submicron, there is no temperature change, but the QED induced charge may significantly increase the 1/f noise. Conclusions 21 Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland

22 Questions & Papers Email: nanoqed@gmail.com http://www.nanoqed.org 22 Microtherm 2013 Microtechnology-Thermal Problems in Electronics June 25-28, Lodz, Poland


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