1. High efficiency system design with Infineon power discretes -Infineon CoolMOSTM,OptiMOSTM, IGBT and SiC diode
Vincent Zeng(曾伟权)
System application engineer
Infineon Technologies China

2. Infineon Products help reduce losses along the Entire Energy Distribution Chain
Presentation title
Energy Generation
Energy Distribution
Energy Consumption
Losses
Losses 
AC/AC 
AC/DC/AC 
Power Supply AC/DC 
Point of Load
DC/DC
Losses
Losses 
Motor Drives,
Traction AC/DC/AC
Losses
~10% 2

3. The evolution on power semiconductor is never end
Mature Super Junction Technology n
epi p + D
sub S G
Blocking state -
Conducting state
Trench+ Field Stop IGBT
Bi-Polar Boost like Structure SiC Diode
New die attachment method
Diffusion soldering technology
New Packaging Concept
<1mm HV ThinPAK, TO-247 High Creepage
1200V SiC JFET
Up coming…

4. Copyright © Infineon Technologies 2010. All rights reserved.
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
Copyright © Infineon Technologies All rights reserved.

5. What is CoolMOS™ technology
Standard MOSFET
On state:
Reduction of resistance of epitaxial layer by high doped n-columns
Higher doping level in n-type drift region results in lower Rds(on)
Blocking state:
Compensation of additional charge by adjacent p-columns
Half of active chip area is covered by p- columns
During blocking state the p-column compensates the charge of the adjacent n- column resulting in high breakdown voltage at an area specific on-resistance below the silicon limit!
CoolMOS™

6. CoolMOSTM – Technology leader in high voltage MOSFETs
A short description of CoolMOS™
Ron x A [Wmm2]
New horizons
for high voltage
applications
Standard MOSFET
Ron x A ~ V(BR)DSS2,4...2,6
CoolMOSTM
Fig.: A near-linear relationship between Rds(on) and V(BR)DSS indicates the significant difference between CoolMOS and conventional MOSFET
High voltage MOSFET in 500V, 600V, 650V, 800V and 900V
Offers a significant reduction of conduction and switching losses
Enables high power density and efficiency for superior power conversion systems
Best-in-class price/performance ratio
the following slides contain a short description and main benefits / technical feature per product family
CoolMOS:
available in 600 and 800V
CoolMOS has reduced Rdson by factor 5 (compared with conventional MOSFET) --> significant lower switching and conduction losses
less losses --> smaller heatsinks --> increased power density and efficiency
CoolMOSTM – Technology leader in high voltage MOSFETs

7. CoolMOSTM generation and milestone
Presentation title
CoolMOSTM generation and milestone
Performance
Self-limited dv/dt,
di/dt, easy-to-use.
Enhanced Diode Commutation
37 mOhm/650V in TO247
CoolMOSTM C6/E6
CoolMOSTM CP(C5)
50% parastic Cap. and Qg. reduction
Best-in-class : 99 mOhm in TO220, 45 mOhm in TO247 IPW60R045CP
CoolMOSTM C3
Revolution in switching losses
Fast Diode “CFD” Series
High current capability.
Best-in-class: 160 mOhm in TO220
CoolMOSTM S5
SJ Revolution in conduction loss
Lowest Rds(on) on the market: 70mOhm
Best-in-class: 190 mOhm in TO220 98 99 01 04 08 09
Time
Copyright © Infineon Technologies All rights reserved.

8. CoolMOS™ C6 high efficiency @ affordable costs
CoolMOS™ C6 is the new generation of Infineon´s market leading high voltage power MOSFET´s designed according to the revolutionary superjunction (SJ) principle
The new 600V&650V C6 portfolio provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use

9. CoolMOS™ C6 high efficiency @ affordable costs
Presentation title
Features:
Benefits:
lower area specific on-state resistance (RDS(on))*A)
lower costs compared to previous CoolMOS™ generations
reduced energy stored in output capacitance (Eoss)
low switching losses (due to low Eoss)
high body diode ruggedness
proven CoolMOS™ quality combined with high body diode ruggedness guarantee outstanding reliability
reduced reverse recovery charge (Qrr)
easy control of switching behavior

10. CoolMOS C6 reduced energy stored in output capacitance
CoolMOS™C6 shows the best Figure-of-merit Ron ∗ Eoss
600V
650V
Low energy stored in output capacitance make make CoolMOS™C6 the right choice for hard switching applications.

11. CoolMOS™ C6 600V efficiency measurement
Efficiency comparison CoolMOS C6 versus C3
Ease of use & good efficiency especially
in light load conditions!

12. CoolMOS™ C6 650V efficiency measurement
DCM PFC stage, 150W, AC in 90V
Ecellent price performance ration, ease of use and good efficiency especially in light load conditions make 650V CoolMOS™C6 the right choice for hard switching applications.

13. CoolMOS C6 gate switching behavior
Under high conduction current
C6 shows no gate spikes up to pulse currents beyond 2 times rated current
Vgs
40A
pulse current
20A
Nominal current C6 Id
Comp SJ
Nominal current
pulse current
40A
20A
Dynamical allowed value of gate voltage (30V)
Vgs Id
Competitor part shows turn off gate spikes even below nominal current.

14. Hard commutation of body diode
CoolMOS™ C6 shows less reverse recovery charge
than C3 and better softness than CFD

15. But, a MOSFET with integrated fast body diode is required in some design…
Presentation title
4/11/2017
Buck
Isolation + Rectification
DC/AC stage
S8..9 S3 S5
230V AC
D2..5 S1
V DC D1 S2 S4
S6..7
ZVS topology
S2..S5 require the MOSFET has low reverse recovery charge Qrr and robustness body diode for hard-commutation
Reactive power operation
S6,S7 switches to hard commutation of body diodes
…Infineon has officially launched CoolMOS CFD2
4/11/2017

16. Main differences between CFD and CFD2
Presentation title
CFD2 is a 650V class MOSFET (CFD is 600V)
Better light load efficiency due to reduced gate charge
Softer commutation behavior and therefore better EMI behavior
CFD2 offers customers a new cost down roadmap
CFD: fast switching of voltage
or current i.e. di/dt or dv/dt
(main causes of EMI)
CFD2: softer commutation
reduces this problem saving
customer time and money in
designing in the part
Set date
Page 16
Copyright © Infineon Technologies All rights reserved.

17. Voltage overshoot CFD2 vs. CFD vs. Competition
Presentation title 17
676V
569V
452V
224V less overshoot with CFD2 for reliable systems
Copyright © Infineon Technologies All rights reserved.

18. CoolMOS™ C6/E6 Portfolio 600V
TO-252 D-Pak [D]
TO-263
D²PAK [B]
TO-220
Fullpak [A]
TO-262
I²-PAK [I]
TO-220 [P]
TO-247 [W]
3.3 Ω
1.8 A
IPD60R3k3C6
2 Ω
2.5 A
IPD60R2k0C6
1.4 Ω
3.2 A
IPD60R1k4C6
IPP60R1k4C6
0.95 Ω
4.5 A
IPD60R950C6
IPB60R950C6
IPP60R950C6
IPA60R950C6
0.75 Ω
6.2 A
IPD60R750E6
IPP60R750E6
IPA60R750E6
0.6 Ω
7.3 A
IPD60R600E6
IPB60R600C6
IPP60R600E6
IPA60R600E6
0.52 Ω
8 A
IPD60R520C6
IPP60R520E6
IPA60R520E6
0.45 Ω
9.5 A
IPD60R450E6
IPP60R450E6
IPA60R450E6
0.38 Ω
11 A
IPD60R380C6
IPB60R380C6
IPP60R380E6
IPA60R380E6
IPI60R380C6
0.28 Ω
15 A
IPB60R280C6
IPP60R280E6
IPA60R280E6
IPI60R280C6
IPW60R280E6
0.19 Ω
20 A
IPB60R190C6
IPP60R190E6
IPA60R190E6
IPI60R190C6
IPW60R190E6
0.16 Ω
24 A
IPB60R160C6
IPP60R160C6
IPA60R160C6
IPW60R160C6
0.125 Ω
30 A
IPP60R125C6
IPA60R125C6
IPW60R125C6
0.099 Ω
35 A
IPB60R099C6
IPP60R099C6
IPA60R099C6
IPW60R099C6
0.07 Ω
47 A
IPW60R070C6
0.041 Ω
77 A
IPW60R041C6

19. CoolMOS™ C6 Portfolio 650V Ultra low Rds(on)
IPW65R037C6: 650V 37mΩ TO247
Ultra low Rds(on)

20. CoolMOS™ E6 650V Portfolio

21. 650V CoolMOS™ CFD2 Portfolio
600 mΩ, 80 mΩ, and 41 mΩ are already launched.
420 mΩ to 110 mΩ will be launched around February to March 2011.
1400 mΩ and 950 mΩ will be launched around May 2011.
Set date
Copyright © Infineon Technologies All rights reserved.

22. Copyright © Infineon Technologies 2010. All rights reserved.
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
Copyright © Infineon Technologies All rights reserved.

23. Low Voltage MOSFETs Target Applications
Presentation title
Low Voltage MOSFETs Target Applications
Computing
Server VRD/VRM
Notebook
Bricks, IBC, POL
Telecom SMPS 48V SR
Server SMPS 12V SR
NB Adapter 16-20V SR
Low Voltage Drives
Solar µ-inverter
LED
Automotive
Telecom DC/DC
SMPS AC/DC
Industrial
HP Vantage Platinum 2,5kW; 94% Eff.
Small Signal
NB Adapter
Copyright © Infineon Technologies All rights reserved.

24. Beyond the silicon limit20 40 60 80
100
120
140
160
600
800
1000
OptiMOS™
CoolMOS™
Si-limit in TO-220
normalized on-resistance
IFX-products
Si-limit in SuperSO8
Si-limit (die)
breakdown voltage [V]
2017/4/11

25. Infineon OptiMOSTM (25V~250V)
Efficiency
Lowest RDS(on) and FOM RDS(on) *Qg against competitors
Infineon
Next Best Competitor
RDS(on) 40 80
120
160 25 30 60 75
100
150
200
250
1000
2000
3000
4000
5000
6000 25 30 40 60 75 80
100
120
150
200
250 V
FOM RDS(on) *Qg V
CanPAK M
SuperSO8
D²PAK-7 pin
D²PAK
TO-220
80V
BSB044N08NN3 G
4.4 mOhm
BSC047N08NS3 G
4.7mOhm
IPB019N08N3 G
1.9mOhm
IPB025N08N3 G
2.5mOhm
IPP028N08N3 G
2.8mOhm
100V
BSB056N10NN3 G
5.6mOhm
BSC060N06NS3 G
6.0mOhm
IPB025N10N3 G
IPB027N10N3 G
2.7mOhm
IPP030N10N3 G
3.0mOhm
120V
BSC077N12NS3 G
7.7mOhm
IPB036N12N3 G
3.6mOhm
IPB038N12N3 G
3.8mOhm
IPP041N12N3 G
4.1mOhm
150V
BSB150N15NZ3 G
15mOhm
BSC190N15NS3 G
19mOhm
IPB065N15N3 G
6.5mOhm
IPB072N15N3 G
7.2mOhm
IPP075N15N3 G
7.5mOhm
200V
BSC320N20NS3 G
32mOhm
IPB107N20N3 G
10.7mOhm
IPP110N20N3 G
11.0mOhm
250V
BSC600N25NS3 G
60mOhm
IPB200N25N3 G
20.0mOhm
IPP200N25N3 G
Best-in-class
Set date

26. Package Size Performance Package resolution D²PAK/TO220 DPAK SO8
SuperSO8
S3O8
Performance

27. SMD leadless package has higher efficiency
Tested in a 12V server power supply in the Sync Rec stage

28. SMD leadless has lower voltage overshoot
Longer electrical MOSFET connections mean
Higher inductance
Higher voltage stress for the MOSFET

29. Adapterboard TO220 to SuperSO8
Gate
Drain
Source
Sync Rec MOSFETs: Q1, Q2 MOSFET – Gate Resistor: R1 RCD Snubber – Diode: D3 RCD Snubber – Capacitor: C3 RCD Snubber – Discharge Resistor: R3 Connectors for RCD Snubber: A Screw holes
What do I need this board for? - quick replacement of TO220 in existing designs
- electrical verification of SuperSO8

30. Copyright © Infineon Technologies 2010. All rights reserved.
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
Copyright © Infineon Technologies All rights reserved.

31. Trench + Fieldstop How to improve the standard IGBT-technology?(
fieldstop )
Concept of thin wafer with Fieldstop-technology reduces VCE(sat) dramatically
Reduction of Conduction Losses for higher Efficiency and improved thermal properties
 Reduction of Swtiching Losses for higher Efficiency
Introduction of trench gate technology reduces VCE(sat) further
 Reduction of Conduction Losses for higher Efficiency
Trench + Fieldstop
2017/4/11

32. IGBT Technology selection
TrenchStopTM in thin wfr technology with carrier profile optimized for fast switching
High Speed 3

33. New Highspeed 3 IGBT technology
600V IGBT
1200V IGBT
High Speed 3
Trench gate+ Field Stop offers superior trade-off
Reduced switching losses for switching Frequencies above 30 kHz
Soft switching behaviour
Optimized diode for target applications
Applikationsbewertung

34. New highspeed 3 IGBT switching behavior
Elimination of tail current at high temperature…
Std IGBT3
CoolmosC3
High Speed 3
High Speed 3
…for MOSFET-like switching behavior

35. Powerloss comparison Simulation with IPOSIMTM
3-phase inverter
Vbus=600V
Fsw=20kHz
Iload=40A
In comparison with the previous generation TrenchStop2, the HighSpeed 3 shows 30% reduction in switching losses and only 16% increase in conduction losses.
The HighSpeed 3 shows approx 10% lower losses than the best competitor, setting benchmark performance.
2017/4/11

36. Turn-off Waveform comparison
IKW30N60H3
IGBT Best competitor
Ic=5A
Vce=400V
Vge=+15/0V
Smooth switching waveforms
Low dV/dt and dI/dt for reduced EMI
2017/4/11

37. Infineon’s High Speed 3 IGBT Portfolio 600V and 1200V Product Family
600V V
TO-263
TO-220
TO-247
TO-247
Continuous
collector
current
at T C
=100°C 
15A 
IGP15N120H3
20A
IGB20N60H3*
IGP20N60H3 
25A
IGP25N120H3
Single IGBT 
30A
IGB30N60H3*
IGP30N60H3  
40A
IGW40N60H3 
IGP40N120H3
50A
IGW50N60H3 
15A
IKW15N120H3 
20A
IKB20N60H3*
IKP20N60H3*
IKW20N60H3 
25A
IKW25N120H3
DuoPack ™ 
30A
IKB30N60H3*
IKP20N60H3*
IKW30N60H3  
40A
IKW40N60H3
IKW40N120H3 
50A
IKW50N60H3
75A
IKW75N60H3*
√ Devices are fully released! * Engineering samples October 2010

38. TrenchStop IGBT for low switching frequency
600V IGBT
1200V IGBT
TO-247
TO-247
Continuous
collector
current
at T C
=100°C
Continuous
collector
current
at T
=100°C C
20A
IKW20N60T
15A
IKW15N120T2
30A
IKW30N60T
DuoPack ™
DuoPack™
25A
IKW25N120T2
50A
IKW50N60T
40A
IKW40N120T2
75A
IKW75N60T
Polarity selection switch
@50Hz switching frequency
conduction loss dominated

39. Copyright © Infineon Technologies 2010. All rights reserved.
Content
CoolMOS technology
OptiMOS technology
TrenchStop IGBT technology
SiC diode technology
Copyright © Infineon Technologies All rights reserved.

40. … today’s voltage range of Schottky ends at 250V
This is a huge application potential for Schottky diode in high voltage application, but …
… today’s voltage range of Schottky ends at 250V
Reasons:
very high leakage currents (reverse loss~forward loss)
on resistance increases with Ubr2.5 and increasing the area
again increases the reverse loss
With SiC Schottky diodes the range can be extended exceeding 1000V
2017/4/11

41. SiC feature fast forward conduction Reduce the Maximum VDS Stress of Power MOSFET!
Very low Vds spike
with SiC Schottky diode
VDS spike up to 600 V with extremely
fast switching boost MOSFET and
competitors tandem diode
Vds
High losses and EMI problems
Vgs
Due to unipolar nature of shottky,
No need for forward recorver
time to get conductive
Vds
Vgs
Improved gate waveform
Using competitor tandem diode
Using SiC Schottky diode
Replacement of diode allows spike reduction of more than 100 V
Full switching speed range of boost MOSFET useable for highest efficiency
2017/4/11

42. Not possible with Si technology at 600 V rating…
Zero reverse recovery charge only with unipolar devices… SiC Schottky diode
Not possible with Si technology at 600 V rating…
…therefore SiC Schottky diode concept required!
2017/4/11

43. Switching loss of SiC keep constant vs Io,Rg and Tc
Advantages of your design: switching loss does not change with
load condition, Rg of Boost MOSFET and temperature.
2017/4/11

44. Ruggedness and improved surge current capability @ elevated Tc (Infineon Patented)
Ideal characteristic: merged pn-Schottky diode
bipolar pn diode
forward characteristic
current surge capability
Low power dissipation
at operation mode
unipolar diode forward characteristic
Biploar Diode = Reverse and forward recovery charge
Unipolar (Schottky) Diode = No reverse and forward recovery charge
Wish: at steady state operation: Schottky characteristic due to benefits like no reverse & forward recovery; at overcurrent conditions (e.g. in-rush current, AC line-drop- out, etc.): bipolar characteristic -> advantage as „minority/majortiy carrier“ -> explanation see next slide
2nd Gen combines unipolar and bipolar behavior (-> for details see next slide) which leads to improved surge current capability at overcurrent stress (5-6 times higher than with 1st Gen and competitors)
2017/4/11

45. SiC diode 3rd generation Package updated
Creepage distance improved by a factor of 2 2G 3G
Average creepage
distance 1.78mm
Average creepage
distance 3.64mm
TO-220 real 2pin package
Besides, SiC diode in SMD package is available
2017/4/11

46. SiC 3rd generation RthJC updated
Reduction of thermal resistance junction to case
New die attachment method
Diffusion soldering technology
Thin soldering technique reduces dramatically solder contribution to RthJC
Thermal margin (Tcase) in your design may be improved.
2017/4/11

47. SiC 3rd generation stored Qc updated
Reduction of device capacitances
3G offers ever lowest
Qc(Qrr) per given
current rating in the
market
Enable higher switching frequency and smaller form-factor design
2017/4/11

48. SiC Diode Portfolio overview
DPAK(TO-252)
TO-220 real 2pin
2017/4/11

49. 1200V SiC Diode in TO-247HC IDY10S120 IDY15S120
package pin dimensions compatible to TO3P / TO247
full green package (RoHS compliant & halogen free)
high creepage / air distance of 6.35 / 3.6mm at pins
no pin shoulders
distance “screw hole center” to “pin out plain” is compatible to TO247 / TO3P => no change of heatsink design required
2017/4/11

50. SiC Diode in TO220FullPAK package
IDV02S60C 2A
IDV03S60C 3A
IDV04S60C 4A
IDV05S60C 5A
IDV06S60C 6A
System cost / size savings due to
reduced cooling requirements
Good thermal performance without
the need for additional isolation layer
and washer
Higher system reliability due to
lower operating temperatures
and less fans
2017/4/11

51. Summary
Explore our website, put us to the test and see why Infineon's power semiconductors lead to your Superior Solutions.
CoolMOS (500V~900V)
OptiMOS (25V~250V)
IGBT
SiC diode (600V/1200V)