1. Seminar Paper review 報告者 : B. J. Hu

2. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, G. Simin, and M. Asif Khana Appl. Phys. Lett., Vol. 79, No. 25, 17 December 2001

3. Enhanced Carrier Confinement in AlInGaN–InGaN Quantum Wells in Near Ultraviolet Light-Emitting Diodes Sung-Ho Baek, Jeom-Oh Kim, Min-Ki Kwon, Il-Kyu Park, Seok-In Na, Ja-Yeon Kim, Bongjin Kim, and Seong-Ju Park IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 11, JUNE 1, 2006

4. Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier Po-Min Tu, Chun-Yen Chang, Shih-Cheng Huang, Ching-Hsueh Chiu, Jet-Rung Chang, Wei-Ting Chang, Dong-Sing Wuu, Hsiao-Wen Zan, Chien-Chung Lin, Hao- Chung Kuo, and Chih-Peng Hsu APPLIED PHYSICS LETTERS 98, 211107 2011

5. High quality ultraviolet AlGaN/GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers Zhen-Yu Li,a Ming-Hua Lo, C. T. Hung, Shih-Wei Chen, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang APPLIED PHYSICS LETTERS 93, 131116 2008

6. Si delta doping in a GaN barrier layer of InGaN/GaN multiquantum well for an efficient ultraviolet light-emitting diode Min-Ki Kwon, Il-Kyu Park, Sung-Ho Baek, Ja-Yeon Kim, and Seong-Ju Park JOURNAL OF APPLIED PHYSICS 97, 106109 (2005)

7. Thanks for your attention