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Basic model p n +- Characteristics of a Schottky diode and a PN junction diode.

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Presentation on theme: "Basic model p n +- Characteristics of a Schottky diode and a PN junction diode."— Presentation transcript:

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2 Basic model p n +-

3 Characteristics of a Schottky diode and a PN junction diode

4 Basic assumptions pn

5 Basic model notation p n

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7 Evolution of the density perturbations Drift due to the electric field Diffusion of the perturbation Generation of additional perturbation Collision lifetime Steady-state Neglect drift and generation

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9 Currents – sum of hole and electron currents

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11 Reverse saturation current These are minority carrier diffusion currents only.

12 These are minority carrier diffusion currents only. p n Majority carriers are defined as the following. The existence of a diffusion current implies an inhomogeneous density profile resulting in a nonzero electric field.

13 Majority carriers p n Majority carrier electron current Majority carrier hole current I Minority carrier diffusion current Minority carrier diffusion current Holes are injected from the p region Electrons are injected from the n region

14 Currents – sum of hole and electron currents Reverse saturation current

15 Currents – sum of hole and electron currents

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17 Europeans are very interested in the American election. This is a float in a parade in Germany.

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19 Simple three-dimensional unit cell


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