1. Seminar Paper review
報告者: C.C.Hong

2. 280nm UV LEDs grown on HVPE GaN substrates
A. YASAN, R. McCLINTOCK, K. MAYES, S.R. DARVISH, P. KUNG, M. RAZEGHI, and R.J. MOLNAR
OPTO-ELECTRONICS REVIEW 10(4), 287–289 (2002)
semi-transparent Ni/Au(30/30)
before and after annealing
50nm-thick p-GaN grown on AlN buffer

3. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi
phys. stat. sol. (a) 188, No. 1, 121–125 (2001)

4. Enhanced Output Power of Near-Ultraviolet InGaN–GaN LEDs Grown on Patterned Sapphire Substrates
D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang
IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 2, FEBRUARY 2005

5. Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template
D. S. Wuu,a W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, and C. F. Lin
APPLIED PHYSICS LETTERS 89,

6. Nitride deep-ultraviolet light-emitting diodes with microlens array
M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang
APPLIED PHYSICS LETTERS 86, (2005)

7. Thanks for your attention