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High Energy Density Charge Storage Capacitors Martin Peckerar, Neil Goldsman, Zeynep Dilli Department of Electrical and Computer Engineering University of Maryland College Park, MD 20742
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Where the Capacitor Fits Into the System “ Rectenna ” Storage Capacitor Block Microwave In To System
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The Basic Capacitor Structure N+ Silicon Metal Hi-k Dielectric a. Cross-section of a corrugated capacitor b. Disposition of the silicon posts in the Corrugated array
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LAYOUT WITHIN A CHIP a a b b c c a+b=k, a constant c=250 microns An n x n array, where: n=(9500/(a+b))
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1 cm 1mm a 11 b 11 a 12 b 12 a 21 b 21 An m x m array, where: m = 8 a ij + b ij =c ij c ij =160microns/(i+j) Plate Layout a ij =(8-i)c ij /8 b ij =ic ij /8 i and j range from 1 to 8
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GDS2 “Blow-Back”* Chip-In Mask Layout Blow-up of corner square Showing pillar tops *This is a graphic display of the actual data used to prepare the mask
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In-Chip GDS2 “Blow-Back”
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Goal of the Experiment The varying aspect ratio of the pillars will allow us to make a curve like the following: capacitance aspect ratio yielding Zero-yield
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Process Flow start etch dope insulate metal
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The Final Step: Stacking the Battery Tiles 1cm < 0.01cm
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