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ECE Memristors for computing & Future Non-Volatile Memory Application- Beyond transistors and silicon technology Somnath Chakraborty, Dept. Of ECE, UMASS.

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Presentation on theme: "ECE Memristors for computing & Future Non-Volatile Memory Application- Beyond transistors and silicon technology Somnath Chakraborty, Dept. Of ECE, UMASS."— Presentation transcript:

1 ECE Memristors for computing & Future Non-Volatile Memory Application- Beyond transistors and silicon technology Somnath Chakraborty, Dept. Of ECE, UMASS The Ionic and Electronic Device and Materials (IEDM) Group CompSci 891M- 22 nd September, Fall’15

2 Electrical and Computer Engineering 1.Present Silicon Technology. 2.What is “Memristor” ! 3.Device operation principle/ Physics behind Resistance switching mechanism. 4.Promising future/ application (NvMe, Analog Computing, Digital Computing etc.). 5.Why should we care? 6.Some funny/unconventional materials as Memristors.

3 Electrical and Computer Engineering Well already know this, still a fun slide to present! Unfortunately life is not so much fun. Fundamental limits are close with present 14nm,10nm technology and it gets more and more difficult with diminishing return as we go smaller. So? What's next? Well Played Silicon, Well Played !

4 Electrical and Computer Engineering 4 Memristors to the rescue!!! “The Memristor was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage.”- Wikipedia BENEFITS: High Density Fast Ultra high Endurance Non Volatile 3D stackable insulator V Metal 1 Metal 2 insulator Metal 1

5 Electrical and Computer Engineering -Memristive switching mechanism for metal/oxide/metal Nanodevices- J. JOSHUA YANG, MATTHEW D. PICKETT, XUEMA LI, DOUGLAS A. A. OHLBERG,DUNCAN R. STEWART* AND R. STANLEY WILLIAMS

6 Electrical and Computer Engineering A basic Memristor with One Top Electrode(Vertical) and One Bottom Electrode(Horizontal). The cross point defines the device.

7 Electrical and Computer Engineering Switching in Metal/TaOx/Ta/Metal Devices- PtTaOxTaPt Change in Resistance - ~10^2 to 10^4

8 Electrical and Computer Engineering J. Joshua Yang et al., Nature Nanotechnology 8, 13 (2013)

9 Electrical and Computer Engineering Intel and Micron already announced their collaboration in making these memory modules to hit store in 2016! -Courtesy: Intel

10 Electrical and Computer Engineering Outlook: Roadmap Time Chip development Universal Memory Analog and Neural Computing Floppy Disk Optical disk Hard Disk Flash RAM W.G. Kim et al., SK-hynix J. Joshua Yang et al., HP Labs VLSI Technology Symposium (2014) 138-139 Flash DRAM Solid State Disk Storage Class Memory

11 Electrical and Computer Engineering Q & A? Thank You!


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