1. Tecport E-beam Evaporator Process parameters. METALS: 1.Aluminium. 2.Chromium. 3.Gold. 4.Titanium. 5.Hafnium. 6.Nickel. OXIDES: 1. Aluminium Oxide. 2. Silicon Dioxide. 3. Titanium Oxide. 4. Indium – Tin Oxide. List of materials which have been evaporated:

2. Aluminium (Al) Base pressure:2.1E-6 Torr. Deposition pressure:2.3E-6 Torr. Rate of deposition:5 Å/s. Measured thickness (Dektak):292.32 nm. Annealing:Annealed at 450°C, with forming gas. Sheet Resistance before annealing:0.124 Ω/□. Sheet Resistance after annealing:0.121 Ω/□. Resistivity:0.035 µΩ m. Process parameter:

3. Al - XRD Data:

4. Base pressure:3.0E-6 Torr. Deposition pressure:2.2E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):52.26 nm. Sheet Resistance.117 Ω/□. Resistivity:52.26E-9 X 117 = 6.1 µΩ m. Chromium (Cr) Process parameter:

5. Cr - XRD Data:

6. Gold (Au) Base pressure:4.2E-6 Torr. Deposition pressure:8.89E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):187.535 nm. Sheet Resistance:0.258 Ω/□. Resistivity:187.535E-9 X 0.258 = 0.048 µΩ m. Process parameter:

7. Au - XRD Data:

8. Titanium (Ti) Process parameter: Base pressure:2.0E-6 Torr. Deposition pressure:2.17E-6 Torr. Rate of deposition:4 Å/s. Measured thickness (Dektak):60 nm. Sheet Resistance:17.5 Ω/□. Resistivity:17.5 X 60E-9= 1.05 µΩ m.

9. Ti - XRD Data:

10. Ti - XPS Data: From XPS data shows that the atomic concentration of O 2 is more on the surface and with depth it is decreasing and the atomic concentration of Ti is increasing with depth.

11. Hafnium (Hf) Process parameter: Base pressure:3.26E-6 Torr. Deposition pressure:1.9E-6 Torr. Rate of deposition:3 Å/s. Measured thickness (Dektak):18.23nm. Sheet Resistance:145.5 Ω/□. Resistivity:145.5 X 18.23E-9= 2.65 µΩ m.

12. Hf - XRD Data:

13. Nickel (Ni) Process parameter: Base pressure:3.2E-6 Torr. Deposition pressure:8E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):65.3 nm. Annealing:Annealed at 450°C. Sheet Resistance before annealing:5.09 Ω/□. Sheet Resistance after annealing:5.75 Ω/□. Resistivity after annealing:37.5E-8 Ω m.

14. Ni - XRD Data (Before annealing):

15. Ni - XRD Data (After annealing):

16. Aluminium Oxide (Al 2 0 3 ): Process parameter: Base pressure:4E-6 Torr. Deposition pressure:8.71E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):150.5 nm. Measured thickness (Ellipsometer):133 nm. ANALYSIS:

17. Aluminium Oxide (Al 2 0 3 ) with O 2 : Base pressure:3E-6 Torr. Deposition pressure:4.86 E-5 Torr. Rate of deposition:1 Å/s. Flow rate (O2):1 sccm (O2 started 1 min before deposition). Measured thickness (Dektak):150 nm. Measured thickness (Ellipsometer):144 nm. Process parameter:

18. ANALYSIS:

19. Silicon Dioxide (SiO 2 ): Process parameter: Base pressure:2E-6 Torr. Deposition pressure:6E-6 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):134 nm. Silicon Dioxide (SiO 2 ) with O 2 : Process parameter: Base pressure:2E-6 Torr. Deposition pressure:4E-5 Torr. Rate of deposition:1 Å/s. Measured thickness (Dektak):150 nm.

20. ANALYSIS: SiO2 Vs. SiO2 with O2

21. Titanium Oxide (TiO 2 ): Process parameter: Base pressure:4.8E-6 Torr. Deposition pressure:4E-5 Torr. Rate of deposition:1 Å/s. Flow rate (O2):1 sccm. Measured thickness (Ellipsometer):77.6 nm

22. ANALYSIS: wavelength Vs. refractive index and extinction coefficient: Wavelength (nm)NK 631.452.0571.007 E-005 633.032.0569.813 E-006