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By Sewvanda Hewa Thumbellage Don, Meshegna Shumye, Owen Paxton, Mackenzie Cook, Jonathon Lee, Mohamed Khelifi, Rami Albustami, Samantha Trifoli 1.

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Presentation on theme: "By Sewvanda Hewa Thumbellage Don, Meshegna Shumye, Owen Paxton, Mackenzie Cook, Jonathon Lee, Mohamed Khelifi, Rami Albustami, Samantha Trifoli 1."— Presentation transcript:

1 By Sewvanda Hewa Thumbellage Don, Meshegna Shumye, Owen Paxton, Mackenzie Cook, Jonathon Lee, Mohamed Khelifi, Rami Albustami, Samantha Trifoli 1

2 2

3 Motivations 3

4 Applications Radios Walkie-Talkies Spy Equipment Security and Alarm Systems Carleton Class room Microphones Heart Rate monitors and Medical Applications Without the Phone!!! 4

5 Block Diagram Feedback Loop Channel Select Filter Phase Locked loop FM demodulator Audio Amp Mixer FM modulator LNA PA Bandpass Filter Channel Select Voltage Control Oscillators Frequency Synthesis 5

6 3mm 1.3mm 6

7 Samantha Trifoli samanthatrifoli@cmail.carleton.ca Transistor Modelling and The Carleton University Fabrication Process 7

8 Transistor Modelling 5µm Length Transistor with Original Parameter Values Extracted dataOriginally Calculated Parameter fit data V G =5V V G =4V V G =3V V G =2V V G =1V V G =0V 8

9 Transistor Modelling 5µm Length Transistor with Parameter Fit Values Extracted dataParameter fit data V G =5V V G =4V V G =3V V G =2V V G =1V V G =0V 9

10 Transistor Modelling 2.5µm Length Transistor with Original Parameter Values Extracted dataOriginally Calculated Parameter fit data V G =5V V G =4V V G =3V V G =2V V G =1V V G =0V 10

11 Transistor Modelling 2.5µm Length Transistor with Parameter Fit Values Extracted dataParameter fit data V G =5V V G =4V V G =3V V G =2V V G =1V V G =0V 11

12 Minimum Transistor Length 5µm 2.5µm Minimum transistor length in the Carleton Fabrication Lab is typically 5µm We pushed it to 2.5µm for higher speed in our circuit 12

13 Metal Mask Reticle 13

14 Photoresist Machine used to spin on the photoresist in the Carleton University Fabrication Lab 14

15 Process Variation Variations in the fabrication of our circuits causes variation in substrate doping and threshold voltage 15

16 Sewvanda HT Don sewvandahewathumbell@cmail.carleton.ca Mixer 16

17 Mixer Function Obtain a desired frequency using two given signals (RF and LO) RF Signal Local Oscillator f Desired Frequency 100.2MHZ 17

18 Mixer Function 10 MHZ 100 MHz120 MHz f1 f1-f2f f1+f2f 110 MHZ f2 18

19 Challenges Getting the Required Gain – No full size resistors – Resistors made from MOSFETs Third Order Intermodulation Products – Side effects of the mixing process – Falls near the Output Frequency making detection complex 19

20 Intermodulation Products f1f2 2f1-f2 2f2-f1 20

21 Schematic Current Mirror RF Modulation Local Oscillator Output Resistors 21

22 FM modulator PA Bandpass Filter Channel Select Voltage Control Oscillators Frequency Synthesis Rami Albustami ramialbustami@cmail.carleton.ca FM POWER AMPLIFIER 22

23 What is a Power Amplifier? Boosts the Output Power The final component just before the antenna in a transmitter 23

24 Schematic Large! VDD V out V in 24

25 Gain ≈ 25.7 dB With Input Power = -20 dBm 25

26 1 dB Compression Point Power Amplifiers trades-off efficiency & linearity Gain ≈ 25.7 dB 26

27 How far will the signal travel? 50 meters Free Space Path Loss ≈ 46.4 dB With Output Power ≈ 5.7 dBm Power Received ≈ -40.7 dBm 27

28 Owen Paxton owenpaxton@cmail.carleton.ca PLL Frequency Synthesizer Feedback Loop Channel Select Filter Phase Locked loop FM demodulator Audio Amp Mixer FM modulator LNA PA Bandpass Filter Frequency Synthesis 28

29 Frequency Synthesizer CLK Phase Frequency Detector Charge Pump VCO Divide By N 29

30 Programmable Divide By N Challenges: Range 80MHz-110MHz Step Size 200KHz Divide by 400-550 Solution: Counter with programmable reset 30

31 Phase Frequency Detector Consists of two flip flops and a NAND gate 31 CLK D Q

32 D Flip Flop Simulation Time (us) Voltage (V) 32

33 Charge Pump 33

34 Current Mirror Simulation Input Voltage (V) Current (mA) 34

35 35

36 [1] J.W.M. Rogers and C. Plett, Radio Frequency Integrated Circuit Design, 2nd ed., Norwood, MA; Artech House, 2010. [2] Adel Sedra and Kenneth Smith, Microelectronics Circuits, 6th ed., Oxford University, 2010. [3] Erik Dahlman, 3G Evolution, 2nd ed., Burlington, Ma; 2008. References [4] Steve C. Cripps, RF Power Amplifiers for Wireless Communication, Norwood, MA; Artech House, 1999. 36

37 Q&A 37


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