1. Work in Progress --- Not for Publication 1 ERD WG 1/22/2009 ERD TWG Emerging Research Devices Telecon Meeting No. 4 Jim Hutchby - Facilitating Thursday, January 22, 2009 5:00 pm – 6:30pm Eastern US Time Pacific US Central US Eastern US Europe Taiwan/Korea Japan Schedule No. 2: 2pm 4pm 5pm 11pm 6am 7am

2. Work in Progress --- Not for Publication 2 ERD WG 1/22/2009 Jan. 22, 2009 ERD Telecon Meeting Objectives u Discuss and decide new structure for the 2009 ERD Logic Section tables.

3. Work in Progress --- Not for Publication 3 ERD WG 1/22/2009 January 22, 2009 ERD Telecon Meeting Agenda 5:00 pm Check in & review meeting Hutchby Objectives/Agenda 5:05 Review proposal for New Logic Tables Bourianoff Hiramoto-san 5:30 Discuss and Decide the New Hiramoto-san 2009 ERD Logic Table structure Bourianoff 6:00 Discuss 2009 ERD Logic Table Bourianoff Entries Hiramoto-san 6:30 Adjourn Meeting

4. Work in Progress --- Not for Publication 4 ERD WG 1/22/2009 Logic table structure CMOS Extension CNTFET GNRFET III-V Channel replacement Ge channel replacement Nanowire FETs Beyond CMOS- Digital functionality SETFET SPINFET CMOL Beyond CMOS- non- digital Spin wave Domain wall NEMS Electrochemical Molecular All spin BISFET MQCA ?????????????? Tunnel FET IMOS

5. Work in Progress --- Not for Publication 5 ERD WG 1/22/2009 Device FET Extension FET [A]1D structuresChannel replacement SETMolecularFerromagnetic logic Spin transistor Typical example devicesSi CMOSCNT FET NW FET NW hetero- structures Nanoribbon transistors with graphene III-V compound semiconductor and Ge channel replacement SETCrossbar latch Molecular transistor Molecular QCA Moving domain wall M: QCA Spin Gain transistor Spin FET Spin Torque Transistor Cell Size (spatial pitch) [B] Projected100 nm100 nm [D]300 nm [I]40 nm [O]10 nm [U]140 nm [Y]100 nm [C] Demonstrate d 590 nm ~1.5  m [E] 1700 nm [J]~200 nm [K, L] ~2  m [V] 250 nm [Z, AA] 100  m [AB] Density (device/cm 2 ) Projected1E104.5E96.1E96E101E125E94.5E9 Demonstrate d 2.8E84E73.5E7~2E92E71.6E91E4 Switch Speed Projected12 THz6.3 THz [F]>1 THz10 THz [Q]1 THz [W]1 GHz [Y]40 GHz [AC] Demonstrate d 1.5 THz200 MHz [G]>300 GHz2 THz [R]100 Hz [V]30 Hz [Z, AA]Not known Circuit Speed Projected61 GHz61 GHz [C] 1 GHz [O]1 GHz [U]10 MHz [Y]Not known Demonstrate d 5.6 GHz220 Hz [H] Data not available 1 MHz [P]100 Hz [V]30 Hz [Z]Not known Switching Energy, J Projected3E-18 3.00E-18 1×10 –18 [O] [>1.5×10 –17 ] [S] 5E-17 [X]~1E-17 [Z]3E-18 Demonstrate d 1E-161E-11 [H]1E-16 [J] 8×10 –17 [T] [>1.3×10 –14 ] [S] 3E-7 [V]6E-18 [AA]Not known Binary Throughput, GBit/ns/cm 2 Projected238 611010005E-2Not known Demonstrate d 1.61E-8 Data not available 2E-42E-95E-8Not known Operational TemperatureRT RT [M, N] RT Materials SystemSi CNT, Si, Ge, III-V, In 2 O 3, ZnO, TiO 2, SiC, InGaAs, InAs, InSb III-V, Si, Ge, Organic molecules Ferromagnetic alloys Si, III-V, complex metals oxides Research Activity [AD] 379629124432122 Table ERD7a Emerging Research Logic Devices—Demonstrated and Projected Parameters

6. Work in Progress --- Not for Publication 6 ERD WG 1/22/2009 Resonant Tunneling Diodes Multi-ferroic Tunnel Junctions Single Electron Transistors Molecular Devices Ferro- Magnetic Devices Frequency Coherent Spin Devices State VariableCharge Dielectric and magnetic domain polarization Charge Molecular conformation Ferromagnetic polarization Precession frequency Response Function Negative differential resistance Four resistive states Staircase I/V from Coulomb blockade HystereticNonlinear Class— Example Multi-ferroic tunnel junction Voltage tunable transfer function CMOL, cross bar latch Amplifiers, buses, switches Spin torque oscillator ArchitectureHeterogeneousMorphic Heterogeneous, morphic MQCA, morphic Morphic Application Elements in hybrid magneto electric circuits Analog pattern matching Associative processing, NP complete, Elements in hybrid magneto- electric circuits Microwave power, tunable rectifiers Comments Additional functionality Density, functionality Density, cost functionality Radiation hard, environmental rugged RF functionality StatusDemo Simulation Material IssuesStray chargeRT DMS Table ERD7b Alternative Information Processing Devices

7. Work in Progress --- Not for Publication 7 ERD WG 1/22/2009 Logic Table 2007 Version 2 + 1 Table (1) Emerging Logic (General Purpose) (2) Alternative Info. Processing Devices Transition Table 2009 Version (Proposed) 3 + 1 Table (1) CMOS Extension (2) Beyond CMOS (CMOS Supplement) Transition Table (3) Pure Beyond CMOS (CMOS replacement) Classified by Operation Principles Classified by Principles and Materials T. Hiramoto, Dec. 14, 2009.

8. Work in Progress --- Not for Publication 8 ERD WG 1/22/2009 year Beyond CMOS Elements ERD-WG in Japan Existing technologies New technologies Evolution of Extended CMOS CMOS Extension CMOS Supplement CMOS Replacement

9. Work in Progress --- Not for Publication 9 ERD WG 1/22/2009 (1) CMOS Extension Table

10. Work in Progress --- Not for Publication 10 ERD WG 1/22/2009 (2) Beyond CMOS (CMOS Supplement) - Spin MOSFET (Including STT) - SET (including Molecular SET) - CMOL

11. Work in Progress --- Not for Publication 11 ERD WG 1/22/2009 (3) Beyond CMOS (CMOS Replacement) - Spin Wave - Domain Wall - NEMS - Electrochemical (Atom Switch, Memoristor?) - Molecular Computing Devices - Spin Transistor

12. Work in Progress --- Not for Publication 12 ERD WG 1/22/2009 Operation Principles and Materials

13. ERD Logic Section for 2009 ITRS Logic Workshop San Francisco, Ca. Dec 14, 2008 George Bourianoff facilitating

14. Proposed Chapter Structure Transition table - same structure 2007 Table 1 - “CMOS Extension” –Include (devices with FET functionality) Low dimensional structures III-V and Ge channel replacement structures Carbon-based material channel replacement structures BTBT devices ? ??????

15. Proposed Chapter structure (Cont) Table 2 “Beyond CMOS” devices –Category A “Digital Functionality” Spin Devices NEMS switches Atomic and molecular switches ????? –Category B “Non Digital Functionality” Spin devices Multi-ferroic devices Molecular devices ???

16. Table 1 Proposed changes – “High Performance” >”CMOS Extension” Low dimensional structures :Carbon Nanotube FETs, nanowire FETs, Nanowire heterostructures, GNR FETS. High mobility channel replacement FETs including III-V and Ge Single electron devices - Move to table 2 Molecular devices including atomic switches- focus on molecule on CMOS architecture (CMOL) concept - Move to table 2 Ferromagnetic and coherent spin devices – Move to table 2 Add Band to Band Tunneling Devices ??

17. Proposed CMOS Extension Entries Low dimensional structures (nanowires) III-V and Ge channel replacement structures Carbon-based material channel replacement structures (CNT and GNR) BTBT devices ? ??????

18. 2007 Alternative Device Table

19. Table 2 proposed changes “Alternative Information Processing” > “ Beyond CMOS” Resonant Tunneling Diodes – Move to transition table Digital Functionality –Multi-ferroic devices –Spin devices –Single Electron devices Non digital functionality –Molecular Devices – CMOL –Bi-layer graphene devices –MQCA –Frequency Coherent Spin Devices –RF devices Do we want to include some “architecture driven” device?

20. Proposed “Beyond CMOS” entries Category A “Digital Functionality” –Spin Devices –NEMS switches –Atomic and molecular switches –????? Category B “Non Digital Functionality” –Spin devices –Multi-ferroic devices –Molecular devices –???

21. Technology Entries(1) FET extensions –Low dimension Channel replacement category CNTFETS and Nanowire FETS Discuss CNTFETs with PIDs –High mobility channel replacements Send III-V and Ge to PIDs Graphene Nanoribbon devices

22. SETs Move to Table 2 –Some recent work still suggests logic applications –Emphasize non logic applications (recognition) –SETs have been around for a long time –Stray charge will always be problem Nature of Nanotechnology advance online

23. Molecular devices Move to table 2 Emphasize potential applications in crossbar architectures, CMOL Recent progress will be reviewed Some people believe strongly that the technology has great potential

24. Ferromagnetic and spin transistor Merge categories and move to table 2 Emphasize non volatile functionality Include MQCA and domain wall applications STTRAM research is driving progress in materials and process

25. Band to band tunneling devices Include as a category in table 1 ??? Include other steep SS devices Most devices suffer from low I sat or high V d CNT tunnel FETs

26. Resonant Tunnel Diodes Recommend moving to transition table Pros –Not much recent progress for any logic application Cons –It is an interesting device with NDR –Many people feel strongly about it

27. Multiferroic and magnetoelectric devices Include multiferroic tunnel junctions, magnetoelectric amplifiers, magnetoelectric drivers and detectors Significant progress in RT mutiferroic and magnetoelectric materials e.g. BFO

28. ERM table of applications

29. Proposed structure - table 1

30. Proposed structure –table 2

32. Coupling to ERM