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Sanae Boulay, Limelette, Nov 05 th 20091/20 S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs.

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Presentation on theme: "Sanae Boulay, Limelette, Nov 05 th 20091/20 S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs."— Presentation transcript:

1 Sanae Boulay, Limelette, Nov 05 th 20091/20 S. Boulay, B. Boudjelida, A. Sharzad, N. Ahmad, M. Missous Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs University of Manchester

2 Sanae Boulay, Limelette, Nov 05 th 20092/20  What are the SKA requirements?  Manchester ‘foundry’ capabilities : work flow  Process technology: key points of InP LNA  LNA fabrication and results  Achievements Outline Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs

3 Sanae Boulay, Limelette, Nov 05 th 20093/20 What are the SKA requirements Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs  LNA at frequency range from : 0.3 GHz to 2 GHz (Ultra Wide Band)  Ultra Low Noise: try to reduce NF ~ <0.4 dB.  Low Power dissipation ~< 100mW  Low cost : transfer to mass production (>> 1 Million LNAs)  What’s available in the market? Nothing that fit the bill yet! too expensive, power hungry, MIC (large size), limited frequency band.

4 Sanae Boulay, Limelette, Nov 05 th 20094/20 What do we bring to the project? Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs A cost effective solution : 1. Optical lithography = low cost 2. Single chip MMIC! -New type of material based on InP (low leakage current, High V BR ) -Large periphery active device (up to W=1.2mm) -devices easy to match

5 Sanae Boulay, Limelette, Nov 05 th 20095/20  Introduction : objective of this work  Manchester foundry capabilities : work flow  Process technology: key points of InP LNA  LNA fabrication and results  Conclusion and future work Outline Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs

6 Sanae Boulay, Limelette, Nov 05 th 20096/20 Material growth (MM, JS) Fabrication (AB, SB, JS) DC and RF Characterization & Device modelling (BB, AS) Individual components Design (BB, AS) Work Flow Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs

7 Sanae Boulay, Limelette, Nov 05 th 20097/20 LNA circuit design (BB, AS) LNA layout design (AB, SB) LNA fabrication (AB, SB) Integration in full LNA process Material growth (MM, JS) Fabrication (AB, SB, JS) DC and RF Characterization & Device modelling (BB, AS) Individual components Design (BB, AS) Work Flow Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs LNA characterisation (Selex, MC2, Uni of Man)

8 Sanae Boulay, Limelette, Nov 05 th 20098/20  Introduction : objective of this work  Manchester foundry capabilities : work flow  Process technology  LNA fabrication and results  Conclusion and future work Outline Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs

9 Sanae Boulay, Limelette, Nov 05 th 20099/20 First ever demonstrated large periphery InP based pHEMT. On state gate leakage as low as 0.5μA at a typical low noise bias of 1V, 60 x lower (Bouloukou et al, HETECH, 2007) [1]: R. T. Webster, et al, IEEE Electron Device Letters, vol. 21, 193-5, 2000 Key point: New type of material Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Typical InGaAs/InAlAs pHEMT experimental gate current curves Typical 0.15 μm x 40 μm gate InP-based HEMT [1]

10 Sanae Boulay, Limelette, Nov 05 th 200910/20 Key point: High break down Voltage Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs High break down voltage (> 10V up to 20V) and low leakage levels make it possible to use large periphery devices (commonly used for high-power operation) for low noise operation I g (  A) 2x75  m Gate periphery

11 Sanae Boulay, Limelette, Nov 05 th 200911/20 Larger geometries lead to lower R n, Low R n allows for a closer match between NF and NF min Closer match enables less complex low noise amplifier (LNA) designs less integrated passives less added noise sources  Low NFmin and low Rn are key for low frequency LNA designs  Large periphery devices essential Key point: reduction in Rn and NF Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs

12 Sanae Boulay, Limelette, Nov 05 th 200912/20  Introduction : objective of this work  Manchester foundry capabilities : work flow  Process technology: key points of InP LNA  LNA fabrication and results  Conclusion and future work Outline Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs

13 Sanae Boulay, Limelette, Nov 05 th 200913/20 LNA design study Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs DesignTechnologypHEMTNFFreq range D1Double stage MIC- off chip matching 4x200  m 0.4dB 0.2 to 2GHz D2Double stage MMIC 4x200  m 0.65dB 0.2 to 2GHz D3Single stage MMIC 4x200  m 0.95dB0.2 to 2GHz 2 nd Generation LNA D2 D3 1 st Generation LNA done, tested on 2’’ wafers. Packaging studies in parallel With RFMOD. Dimensions: X = 1.48 mm Y = 1.24 mm

14 Sanae Boulay, Limelette, Nov 05 th 200914/20 LNA Process Fabrication Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs 10 steps process: -pHEMTs, Lg=1  m, W= 800μm -MIM passives -NiCr resistors pHEMTs Resistors Capacitors Inductors All CPW technology!

15 Sanae Boulay, Limelette, Nov 05 th 200915/20 Single-stage circuit; Full MMIC measurements Measurement results (SELEX) LNA Measurements SELEX Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Error in the layout design (short in all the double satge LNAs) And ground plane not well defined in first run  addressed in newer runs Unfortunately:

16 Sanae Boulay, Limelette, Nov 05 th 200916/20 S Parameters of a single stage LNA, SELEX Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs VDD = 3V ; Id = 15 mA  Pdiss = 45 mW

17 Sanae Boulay, Limelette, Nov 05 th 200917/20 VDD = 3V ; Id = 15 mA  Pdiss = 45 mW S Parameter of a single stage LNA, SELEX Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs

18 Sanae Boulay, Limelette, Nov 05 th 200918/20 Best data at 25mA NF ~ 1.5dB to 2dB from 1 to 2.5 GHz Noise measurements of a single stage LNA, MC2 Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs At 25 mA drain current, V DD =3V => P diss =75mW!

19 Sanae Boulay, Limelette, Nov 05 th 200919/20 Full active and passive device libraries. Demonstrated quality requirements:  reliability, reproducibility of the fabrication process. Encouraging results with NF~1.5 to 2dB single stage LNA from 1GHz to 2GHz and Pdiss~75mW.  Optimization of the 2 nd generation LNA design based on measurements …  Transfer the process on 2’’ wafer: homogeneity, and reliability of the process.  Effect of packaging.  3 rd Generation LNA (with new pHEMTs structures, High Gm)  New fabrication method for very low cost sub-micron (0.5  m) technology. Future work Achievements and future work Novel Ultra Low Noise Amplifiers based on InGaAs/InAlAs pHEMTs Achievements

20 Sanae Boulay, Limelette, Nov 05 th 200920/20 Any Questions? Thank you for your attention

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